Abstract: The present invention is a polyester film base which has a surface approximately 5 nm thick. The surface of the film base has been altered to include about 6 to 15 atomic percent nitrogen in the form of imines, secondary amines and primary amines in the ratio of about 1:1:2. The invention also includes a film base whose surface includes oxygen in the form of hydroxyl, ether, epoxy, carbonyl or carboxyl groups wherein the oxygen is about 4 to 10 atomic percent above the original surface content of the base. The polyester film base can be either polyethylene terephthalate or polyethylene naphthalate.

Abstract: The present invention is a polyester film base which has a surface approximately 5 nm thick. The surface of the film base has been altered to include about 6 to 15 atomic percent nitrogen in the form of imines, secondary amines and primary amines in the ratio of about 1:1:2. The invention also includes a film base whose surface includes oxygen in the form of hydroxyl, ether, epoxy, carbonyl or carboxyl groups wherein the oxygen is about 4 to 10 atomic percent above the original surface content of the base. The polyester film base can be either polyethylene terephthalate or polyethylene naphthalate.

Abstract: The present invention is a polyester film base which has a surface approximately 5 nm thick. The surface of the film base has been altered to include about 6 to 15 atomic percent nitrogen in the form of imines, secondary amines and primary amines in the ratio of about 1:1:2. The invention also includes a film base whose surface includes oxygen in the form of hydroxyl, ether, epoxy, carbonyl or carboxyl groups wherein the oxygen is about 4 to 10 atomic percent above the original surface content of the base. The polyester film base can be either polyethylene terephthalate or polyethylene naphthalate.

Abstract: The present invention is a method and apparatus for treating a polyester support such as polyethylene napthalate or polyethylene terephthalate. The treatment is carried out at near atmospheric pressure in a gas of helium and nitrogen or oxygen. The treatment uses anodized aluminum electrodes and an atmospheric glow discharge results when the electrodes are connected to an RF generator and spaced about 2 mm apart. The process and apparatus improve adhesion of subsequently coated emulsions on the polyester support.

Abstract: The present invention is a polyester film base which has a surface approximately 5 nm thick. The surface of the film base has been altered to include about 6 to 15 atomic percent nitrogen in the form of imines, secondary amines and primary amines in the ratio of about 1:1:2. The invention also includes a film base whose surface includes oxygen in the form of hydroxyl, ether, epoxy, carbonyl or carboxyl groups wherein the oxygen is about 4 to 10 atomic percent above the original surface content of the base. The polyester film base can be either polyethylene terephthalate or polyethylene naphthalate.

Abstract: Imaging elements, such as photographic, electrostatographic and thermal imaging elements, are comprised of a support, an image-forming layer and an electrically-conductive layer produced bycoating a layer comprised of a metallo-organic compound and a film-forming binder and subjecting such layer to glow discharge treatment to render it electrically conductive. Use of a metallo-organic compound in combination with a glow discharge treatment provides a controlled degree of electrical conductivity and beneficial chemical, physical and optical properties which adapt the electrically-conductive layer for such purposes as providing protection against static or serving as an electrode which takes part in an image-forming process.

Abstract: The present invention is a polyester film base which has a surface approximately 5 nm thick. The surface of the film base has been altered to include about 6 to 15 atomic percent nitrogen in the form of imines, secondary amines and primary amines in the ratio of about 1:1:2. The invention also includes a film base whose surface includes oxygen in the form of hydroxyl, ether, epoxy, carbonyl or carboxyl groups wherein the oxygen is about 4 to 10 atomic percent above the original surface content of the base. The polyester film base can be either polyethylene terephthalate or polyethylene naphthalate.

Abstract: A sputtering process employs a target which defines a hollow sputtering chamber having a relatively small orifice or slit through which particles, sputtered from the chamber-defining interior surfaces of the target, can exit the chamber and deposit on a workpiece or substrate disposed externally of the chamber and facing the orifice. According to a preferred embodiment, heating of the substrate by high energy secondary electrons exiting the sputtering chamber through the target orifice is significantly reduced by producing a magnetic field within the sputtering chamber, and by arranging a positively biased electrode (i.e. an anode) within the sputtering chamber opposite the target orifice. The magnetic field serves to prevent the escape of a substantial portion of such electrons from the target interior, and the anode performs the same function by collecting such electrons as they impinge thereon.

Abstract: A method of making a thermo-magneto-optic element stable over wide temperature ranges wherein a barrier layer is applied to a polymeric substrate, the substrate is first exposed to an RF oxygen plasma treatment at a power of from about 50 to about 200 watts and a time of from about 5 to about 200 seconds.

Abstract: A magnetic optical recording element including a rare earth-transition metal recording layer, a barrier layer and a self-passivating active metal layer.

Abstract: A fusing roller of the type having a thin resistance heating layer near its surface has a core made of a thermally and electrically insulative material, such as glass, which has a coefficient of thermal expansion comparable to that of the resistance heating layer. The roller can then withstand a high temperature curing process for other layers without separation of the resistance layer from the core.

Abstract: A sputtering process for efficiently preparing amorphous semiconducting films having a reduced number of localized states is disclosed. In particular, hydrogenated semiconductor films free of polyhydrides may be prepared according to the inventive process. In one application of the process, a silicon target is simultaneously bombarded by separate beams of relatively heavy sputtering ions, such as argon ions, effective in sputtering the target at relatively high rates, and by ions of a substance effective in passivating localized states in amorphous semiconducting films, such as hydrogen ions. The products of this sputtering process are collected on remotely located substrates to form a passivated amorphous semiconductor film. In another application of the process, a target composed of a semiconductor alloy is used with separate sputtering and passivating ion beams directed at the target to deposit a passivated compound semiconductor film.