Abstract: A technique for fabrication of thin-film bolometric materials for use in -ohm resistance multi-detector devices. A group IB periodic table element is reactively co-sputtered with small amounts of a dopant in a reduced gas atmosphere. The reactive co-sputtering is achieved in an oxygen containing atmosphere, where the dopant has an oxide that is highly temperature dependent with an electrical resistance that varies in accordance with the oxide content of the dopant. A reduced electrical resistance of the resultant doped material is achieved.

Abstract: Susceptor formed with a base and with a pedestal made of materials respectively having low and high radio-frequency (r-f) absorptivities. Mercury is carried in a cavity in the base and a semiconductor substrate is carried in a cavity in the pedestal. When an r-f field is applied to the susceptor, the substrate is heated to a higher temperature than the mercury.

Abstract: The growth of mercury cadmium telluride (Hg.sub.(1-x) Cd.sub.x Te) alloys carried out by the pyrolytic decomposition of a mixture of Cd and Te alkyls in an atmosphere of Hg vapor; the ternary alloy is deposited as an epitaxial film on a CdTe single crystal substrate. The substrate is carried on a heated susceptor in a reactor vessel. The susceptor also has a cavity in which mercury is heated (at a temperature different from the substrate temperature) to provide Hg vapor. A mixture of dimethyl cadmium and diethyl tellurium gases flows through the reactor, the gases thermally decompose in the vicinity of the substrate, and combine with the Hg vapor to form Hg.sub.(1-x) Cd.sub.x Te on the substrate. The relative proportions of dimethyl cadmium and diethyl tellurium determine x in the compound.