Abstract: The method of the present invention comprises providing a wafer including a first, second and third material; contacting the third material in the presence of a working liquid with abrasive composites fixed to an abrasive article; and moving the wafer until an exposed surface of the wafer is substantially planar and comprises at least one area of exposed third material and one area of exposed second material. The components of the working liquid include an aqueous solvent; a pH buffer exhibiting a pKa greater than 7 and comprising a basic pH adjusting agent and a multidentate acidic complexing agent; and a non-ionic surfactant. The nonionic surfactant exhibits a hydrophile-lipophile balance of at least about 4. The working liquid is substantially free of loose abrasive particles and exhibits a pH of about 7-12.

Abstract: The disclosure pertains to compositions and methods for modifying or refining the surface of a wafer suited for semiconductor fabrication. The compositions include working liquids useful in modifying a surface of a wafer suited for fabrication of a semiconductor device. In some embodiments, the working liquids are aqueous solutions of initial components substantially free of loose abrasive particles, the components including water, a surfactant, and a pH buffer exhibiting at least one pKa greater than 7. In certain embodiments, the pH buffer includes a basic pH adjusting agent and an acidic complexing agent, and the working liquid exhibits a pH from about 7 to about 12. In further embodiments, the disclosure provides a fixed abrasive article comprising a surfactant suitable for modifying the surface of a wafer, and a method of making the fixed abrasive article. Additional embodiments describe methods that may be used to modify a wafer surface.

Abstract: The disclosure pertains to compositions and methods for modifying or refining the surface of a wafer suited for semiconductor fabrication. The compositions include working liquids useful in modifying a surface of a wafer suited for fabrication of a semiconductor device. In some embodiments, the working liquids are aqueous solutions of initial components substantially free of loose abrasive particles, the components including water, a surfactant, and a pH buffer exhibiting at least one pKa greater than 7. In certain embodiments, the pH buffer includes a basic pH adjusting agent and an acidic complexing agent, and the working liquid exhibits a pH from about 7 to about 12. In further embodiments, the disclosure provides a fixed abrasive article comprising a surfactant suitable for modifying the surface of a wafer, and a method of making the fixed abrasive article. Additional embodiments describe methods that may be used to modify a wafer surface.

Abstract: Polymerizable compositions that include: (a) a cationically active functional group; (b) an initiation system capable of initiating cationic polymerization of the cationically active functional group; and (c) a filler composition that includes various radiopacifying fillers in an amount sufficient to render the polymerizable composition radiopaque. Components (a), (b), and (c) are selected such that the polymerizable composition polymerizes to form a polymerized composition having a Barcol hardness, measured using a GYZJ-935 meter, of at least 10 within 30 minutes following initiation of the cationically active functional group at a reaction temperature of 25° C.

Abstract: Polymerizable composition that include: (a) a cationically active functional group; (b) an initiation system capable of initiating cationic polymerization of the cationically active functional group; and (c) a filler composition that includes various radiopacifying fillers in an amount sufficient to render the polymerizable composition radiopaque. Components (a), (b), and (c) are selected such that the polymerizable composition polymerizes to form a polymerized composition having a Barcol hardness, measured using a GYZJ-935 meter, of at least 10 within 30 minutes following initiation of the cationically active functional group are a reaction temperature of 25° C.

Abstract: Polymerizable composition that include: (a) a cationically active functional group; (b) an initiation system capable of initiating cationic polymerization of the cationically active functional group; and (c) a filler composition that includes various radiopacifying fillers in an amount sufficient to render the polymerizable composition radiopaque. Components (a), (b), and (c) are selected such that the polymerizable composition polymerizes to form a polymerized composition having a Barcol hardness, measured using a GYZJ-935 meter, of at least 10 within 30 minutes following initiation of the cationically active functional group are a reaction temperature of 25° C.

Abstract: Polymerizable compositions that include: (a) a cationically active functional group; (b) an initiation system capable of initiating cationic polymerization of the cationically active functional group; and (c) a filler composition that includes various radiopacifying fillers in an amount sufficient to render the polymerizable composition radiopaque. Components (a), (b), and (c) are selected such that the polymerizable composition polymerizes to form a polymerized composition having a Barcol hardness, measured using a GYZJ-935 meter, of at least 10 within 30 minutes following initiation of the cationically active functional group at a reaction temperature of 25° C.

Abstract: This invention pertains to a method of modifying or refining a surface of a wafer suited for semiconductor fabrication. This method may be used to modify a wafer having an unmodified, exposed surface comprised of a layer of a second material deployed over at least one discrete feature of a first material attached to the wafer. A first step of this method comprises contacting and relatively moving the exposed surface of the wafer with respect to an abrasive article, wherein the abrasive article comprises an exposed surface of a plurality of three-dimensional abrasive composites comprising a plurality of abrasive particles fixed and dispersed in a binder and maintaining contact to effect removal of the second material. In a second step, the contact and relative motion are continued until an exposed surface of the wafer has at least one area of exposed first material and at least one area of exposed second material.

Abstract: The present invention relates to a method and an article for rapidly polishing a glass workpiece surface using a structured abrasive article including cerium oxide particles dispersed in a binder. The abrasive article for rapid polishing of a glass workpiece comprising a backing and at least one polishing layer. The polishing layer comprises cerium oxide particles dispersed within a binder. The binder provides the attachment means of the at least one polishing layer to the backing. The abrasive article is capable of reducing an initial Rtm of about 0.8 .mu.m or greater on a glass test blank to a final Rtm of about 0.3 .mu.m or less in about one minute using an RPE procedure defined herein. The present invention is also directed to a method of polishing a glass workpiece using the present abrasive article.

Abstract: The present invention relates to a method and an article for rapidly polishing a glass workpiece surface using a structured abrasive article including cerium oxide particles dispersed in a binder. The abrasive article for rapid polishing of a glass workpiece comprising a backing and at least one polishing layer. The polishing layer comprises cerium oxide particles dispersed within a binder. The binder provides the attachment means of the at least one polishing layer to the backing. The abrasive article is capable of reducing an initial Rtm of about 0.8 .mu.m or greater on a glass test blank to a final Rtm of about 0.3 .mu.m or less in about one minute using an RPE procedure defined herein. The present invention is also directed to a method of polishing a glass workpiece using the present abrasive article.

Abstract: A method of modifying an exposed surface of a semiconductor wafer that includes the steps of:(a) contacting the surface with a fixed abrasive article having a three-dimensional textured abrasive surface that includes a plurality of abrasive particles and a binder in the form of a pre-determined pattern; and(b) relatively moving the wafer and the fixed abrasive article to modify said surface of the wafer.

Abstract: A hydrophilic polymeric article has metal oxide particles dispersed throughout a polymeric binder material. A major surface of the polymeric material is treated so as to remove polymeric binder to provide a higher ratio of metal to carbon atoms on the major surface of the polymeric article relative to its interior. The polymeric article provides extraordinary water-spreading effects on the major surface, making the article particularly suitable for use as a surface covering on a retroreflective sheeting.

Abstract: The present invention relates to a method and an article for rapidly polishing a glass workpiece surface using a structured abrasive article including cerium oxide particles dispersed in a binder. The abrasive article for rapid polishing of a glass workpiece comprising a backing and at least one polishing layer. The polishing layer comprises cerium oxide particles dispersed within a binder. The binder provides the attachment means of the at least one polishing layer to the backing. The abrasive article is capable of reducing an initial Rtm of about 0.8 .mu.m or greater on a glass test blank to a final Rtm of about 0.3 .mu.m or less in about one minute using an RPE procedure defined herein. The present invention is also directed to a method of polishing a glass workpiece using the present abrasive article.

Abstract: A visible-light photopolymerizable composition comprising a) a cationically polymerizable epoxy resin, b) a hydroxyl-containing material c) an aryliodonium salt and d) a visible light sensitizer that is an alpha-dicarbonyl compound having an extinction coefficient less than about 1000. Particularly preferred compositions of the present invention are dental materials.