Abstract: A showerhead tilt adjustment mechanism is provided which supports a showerhead module in a top plate of a semiconductor substrate processing apparatus, the showerhead tilt adjustment mechanism including a differential screw which provides coarse and fine adjustments to adjust gap/tilt/planarization of a faceplate of the showerhead module with respect to an upper surface of a substrate pedestal module adjacent the faceplate in the semiconductor substrate processing apparatus.

Abstract: A showerhead tilt adjustment mechanism is provided which supports a showerhead module in a top plate of a semiconductor substrate processing apparatus, the showerhead tilt adjustment mechanism including a differential screw which provides coarse and fine adjustments to adjust gap/tilt/planarization of a faceplate of the showerhead module with respect to an upper surface of a substrate pedestal module adjacent the faceplate in the semiconductor substrate processing apparatus.

Abstract: An article is provided, the article including a substrate having a surface with a first wettability characteristic. A nano-structure array is formed on the surface of the substrate to provide a nano-structured surface having a second wettability characteristic. A thin-layer surface coating is formed on the nano-structured surface, the thin-layer surface coating being configured to tune the nano-structured surface to a target wettability characteristic.

Abstract: An RFID transponder chip includes at least one antenna to pick-up and transmit radio-frequency signals, a rectifier to store charge on at least one capacitor at a rectified voltage from the picked-up radio-frequency signals, a power-on reset circuit to maintain a logic unit in a reset state if the rectified voltage level is less than a power-on reset or wake-up voltage of the power-on reset circuit for operating the logic unit. The RFID transponder chip further includes a non-volatile memory, in which are stored one or several trim values. Said non-volatile memory is directly connected to the power-on reset circuit to be able to provide at least one trim value to trim the power-on reset circuit at a rectified voltage level below a wake-up voltage level.

Abstract: A RFID transponder includes an electronic circuit and an antenna, the electronic circuit being integrated in a p-type substrate and comprising a modulator formed by a PMOS transistor whose drain, electrically connected to a pad of the antenna, and source, connected to the ground of the electronic circuit, are arranged in an n-type well provided in the p-type substrate. The PMOS transistor has a gate driven by a driving circuit which is arranged for providing at least a negative voltage, this negative voltage being low enough for turning on this PMOS transistor in response to a control signal provided by a logical unit of the electronic circuit.

Abstract: An RFID transponder chip includes at least one antenna to pick-up and transmit radio-frequency signals, a rectifier to store charge on at least one capacitor at a rectified voltage from the picked-up radio-frequency signals, a power-on reset circuit to maintain a logic unit in a reset state if the rectified voltage level is less than a power-on reset or wake-up voltage of the power-on reset circuit for operating the logic unit. The RFID transponder chip further includes a non-volatile memory, in which are stored one or several trim values. Said non-volatile memory is directly connected to the power-on reset circuit to be able to provide at least one trim value to trim the power-on reset circuit at a rectified voltage level below a wake-up voltage level.

Abstract: An article is provided, the article including a substrate having a surface with a first wettability characteristic. A nano-structure array is formed on the surface of the substrate to provide a nano-structured surface having a second wettability characteristic. A thin-layer surface coating is formed on the nano-structured surface, the thin-layer surface coating being configured to tune the nano-structured surface to a target wettability characteristic.

Abstract: The self-powered detection device comprises a Non-Volatile Memory (NVM) unit formed by at least a NVM cell and a sensor activated by a physical or chemical action or phenomenon, the NVM unit arranged for storing in the NVM cell, by using electrical power of the electrical stimulus pulse, a bit of information relative to detection by the sensor, during a detection mode of the self-powered detection device, of at least one physical or chemical action or phenomenon applied to it with at least a given strength or intensity and resulting in a voltage stimulus signal provided between a set control terminal and a base terminal of the NVM unit with at least a given set voltage.

Abstract: The self-powered detection device comprises a non-volatile memory cell and a sensor activated by a physical or chemical action or phenomenon, this sensor forming an energy harvester transforming energy from the physical or chemical action orphenomenon into an electrical stimulus pulse, the memory cell arranged for storing, by using electrical power of the electrical stimulus pulse, at least a bit of information relative to detection by the sensor of at least a first physical or chemical action or phenomenon. The non-volatile memory cell comprises a FET transistor having a control gate, a first diffusion defining a first input and a second diffusion defining a second input. This FET transistor is set to its written logical state from its initial logical state when, in a detection mode, it receives on a set terminal a voltage stimulus signal resulting from the first physical or chemical action or phenomenon.

Abstract: The self-powered detection device comprises a Non-Volatile Memory (NVM) unit (52) formed at least by a NVM cell and a sensor which is activated by a physical or chemical action or phenomenon, this sensor forming an energy harvester that transforms energy from said physical or chemical action or phenomenon into an electrical stimulus pulse, said NVM unit being arranged for storing in said NVM cell, by using the electrical power of said electrical stimulus pulse, a bit of information relative to the detection by said sensor, during a detection mode of the self-powered detection device, of at least one physical or chemical action or phenomenon applied to it with at least a given strength or intensity and resulting in a voltage stimulus signal provided between a set control terminal (SET) and a base terminal (SET *) of said NVM unit with at least a given set voltage.

Abstract: A RFID transponder includes an electronic circuit and an antenna, the electronic circuit being integrated in a p-type substrate and comprising a modulator formed by a PMOS transistor whose drain, electrically connected to a pad of the antenna, and source, connected to the ground of the electronic circuit, are arranged in an n-type well provided in the p-type substrate. The PMOS transistor has a gate driven by a driving circuit which is arranged for providing at least a negative voltage, this negative voltage being low enough for turning on this PMOS transistor in response to a control signal provided by a logical unit of the electronic circuit.

Abstract: The self-powered detection device comprises a Non-Volatile Memory (NVM) unit (52) formed at least by a NVM cell and a sensor which is activated by a physical or chemical action or phenomenon, this sensor forming an energy harvester that transforms energy from said physical or chemical action or phenomenon into an electrical stimulus pulse, said NVM unit being arranged for storing in said NVM cell, by using the electrical power of said electrical stimulus pulse, a bit of information relative to the detection by said sensor, during a detection mode of the self-powered detection device, of at least one physical or chemical action or phenomenon applied to it with at least a given strength or intensity and resulting in a voltage stimulus signal provided between a set control terminal (SET) and a base terminal (SET *) of said NVM unit with at least a given set voltage.

Abstract: The self-powered detection device comprises a Non-Volatile Memory (NVM) unit (52) formed by at least a NVM cell and a sensor which is activated by a physical or chemical action or phenomenon, the NVM unit being arranged for storing in said NVM cell, by using the electrical power of said electrical stimulus pulse, a bit of information relative to the detection by said sensor, during a detection mode of the self-powered detection device, of at least one physical or chemical action or phenomenon applied to it with at least a given strength or intensity and resulting in a voltage stimulus signal provided between a set control terminal (SET) and a base terminal (SET *) of the NVM unit with at least a given set voltage.

Abstract: The self-powered detection device comprises at least a non-volatile memory cell (24) and a sensor (16) which is activated by a physical or chemical action or phenomenon, this sensor forming an energy harvester that transforms energy from said physical or chemical action or phenomenon into an electrical stimulus pulse, the memory cell being arranged for storing, by using the electrical power of said electrical stimulus pulse, at least a bit of information relative to the detection by the sensor of at least a first physical or chemical action or phenomenon applied to it with at least a given strength or intensity. The non-volatile memory cell is formed by a FET transistor (T1) having a control gate, a first diffusion (DRN) defining a first input and a second diffusion (SRC) defining a second input.

Abstract: The external event detection device comprises an electronic unit (22) and an external event sensor (16), the electronic unit having at least a non-volatile memory cell (24, T1) in which data relative to at least one external event detected by the external event sensor can be stored. According to the invention, the external event sensor defines an energy harvester that transforms energy from said at least one external event into electrical energy contained in an electrical stimulus pulse provided to the electronic unit. The electronic unit is arranged for storing said data by using only the electrical energy contained in the electrical stimulus pulse. In particular, the non-volatile memory cell is directly set to its written logical state from its initial logical state by the electrical stimulus pulse provided by said energy harvester.

Abstract: A semiconductor layout design analyzer alerts a user of areas in a semiconductor layout design that may be candidates for radiation induced inversion. The analyzer includes means for gathering information, means for identifying, and means for alerting the user. The means for gathering gathers, from the layout design, placement information for thick oxide, low-doped p-type single crystal silicon, and n-type silicon. The means for identifying identifies, in the layout design, thick oxide overlaying low-doped p-type single crystal silicon and abutting n-type silicon. The means for alerting the user alerts the user of the identified areas of thick oxide.

Abstract: Novel modifying agents contain a sharply-melting crystalline polymer ingredient, preferably a side chain crystalline (SCC) ingredient, and an active chemical ingredient. Such modifying agents, especially when in the form of particles, can be placed in contact with a matrix, will not modify the matrix below the crystalline melting point Tp, but will rapidly modify the matrix above Tp. The active chemical ingredient can react with the matrix, catalyze a reaction of the matrix, or inhibit a reaction of the matrix. Particularly useful compositions are polymer precursors which are storage-stable at low temperatures but which are rapidly converted to crosslinked resins when heated to temperatures above Tp, optionally in the presence of light.

Abstract: A ferroelectric field effect transistor (FET) has a gate, source, drain, and substrate. A negative voltage is applied to the gate. Ground potential is applied to the source, drain, and substrate. The negative voltage has a magnitude at least equal to the coercive voltage of the FET. A positive voltage is then applied to the gate. Ground potential is applied to the source and substrate. The positive voltage is no less than the coercive voltage. Either a positive voltage or a ground potential is applied to the drain to write a logic state to the FET. A voltage is applied to the gate. Ground potential is applied to the source. A positive voltage is applied to the drain. The drain current is measured and compared to a compare current. The relative size of the drain current compared to the compare current is indicative of the stored logic state in the FET.

Abstract: A ferroelectric integrated circuit memory device includes: a plurality of memory cells, each including a ferroelectric material, a plurality of conducting lines, each connected to or connectable to a selected one of the memory cells; a drive circuit for applying a predetermined voltage for a predetermined time to a selected one of the conducting lines, the predetermined voltage and time being the normal voltage and time required to perform write or read functions to the memory cell, a function selected from the group of: writing a logic state to the selected memory cell, and reading the selected memory cell; and a mode control circuit responsive to an external signal for adjusting the predetermined voltage or the predetermined time to perform an operation selected from the group consisting of: a partial read of the selected memory cell, and a partial write of the selected memory cell; and applying ferroelectric stress to the memory cell.

Abstract: Novel modifying agents contain a sharply-melting crystalline polymer ingredient, preferably a side chain crystalline (SCC) ingredient, and an active chemical ingredient. Such modifying agents, especially when in the form of particles, can be placed in contact with a matrix, will not modify the matrix below the crystalline melting point Tp, but will rapidly modify the matrix above Tp. The active chemical ingredient can react with the matrix, catalyze a reaction of the matrix, or inhibit a reaction of the matrix. Particularly useful compositions are polymer precursors which are storage-stable at low temperatures but which are rapidly converted to crosslinked resins when heated to temperatures above Tp, optionally in the presence of light.