Abstract: An input device includes a control surface for a color correction system. The control surface includes a housing with an upwardly facing control panel. The control panel has a proximal edge which is nearest a user and a distal edge that is furthest from a user in normal use. The control panel includes a plurality of controls. The plurality of controls includes: a plurality of trackballs, wherein each trackball comprises a ball and a control ring, said ball cooperating with at least one encoder to generate a multi-dimensional control signal based on motion of the ball, and said control ring cooperating with at least one encoder to generate a one dimensional control signal based on the rotational motion of the ring, wherein the ball of said trackball is mounted concentrically with said control ring; a plurality of control buttons; and a plurality of knobs coupled to respective rotary encoders.

Abstract: Aspects of the disclosure are directed to sensing integrated circuit (IC) Back End Of Line (BEOL) process corners. In one aspect, an apparatus for sensing IC BEOL process corners includes a ring oscillator including a plurality of ring oscillator stages configured to generate an output waveform with a frequency state; and a shield net circuit including a plurality of shield net stages corresponding to the plurality of ring oscillator stages, the shield net circuit having a toggle input. And, a method includes generating an output waveform with a frequency state using a ring oscillator that includes a plurality of ring oscillator stages; modifying a plurality of ring oscillator stage time delays through a coupling between a plurality of shield net stages and the plurality of ring oscillator stages; and selecting the frequency state using a toggle input of a shield net circuit which includes the plurality of shield net stages.

Abstract: In a first aspect, a semiconductor device includes a plurality of cells. Each cell of the plurality of cells includes four metal tracks running substantially parallel to each other in a first metal layer to provide signal routing and a plurality of wrapped channels having a pitch that is uniform among the plurality of wrapped channels. In a second aspect, a semiconductor device includes a plurality of cells. Each cell of the plurality of cells includes four metal tracks running substantially parallel to each other in a first metal layer to provide signal routing and a plurality of wrapped channels having an asymmetric distribution. For example, a first distance between a first pair of adjacent wrapped channels is different than a second distance between a second pair of adjacent wrapped channels.

Abstract: Aspects of the disclosure are directed to sensing integrated circuit (IC) Back End Of Line (BEOL) process corners. In one aspect, an apparatus for sensing IC BEOL process corners includes a ring oscillator including a plurality of ring oscillator stages configured to generate an output waveform with a frequency state; and a shield net circuit including a plurality of shield net stages corresponding to the plurality of ring oscillator stages, the shield net circuit having a toggle input. And, a method includes generating an output waveform with a frequency state using a ring oscillator that includes a plurality of ring oscillator stages; modifying a plurality of ring oscillator stage time delays through a coupling between a plurality of shield net stages and the plurality of ring oscillator stages; and selecting the frequency state using a toggle input of a shield net circuit which includes the plurality of shield net stages.

Abstract: An integrated circuit can include a plurality of first transistors formed in a substrate and having gate lengths of less than one micron and at least one tipless transistor formed in the substrate and having a source-drain path coupled between a circuit node and a first power supply voltage. In addition or alternatively, an integrated circuit can include minimum feature size transistors; a signal driving circuit comprising a first transistor of a first conductivity type having a source-drain path coupled between a first power supply node and an output node, and a second transistor of a second conductivity type having a source-drain path coupled between a second power supply node and the output node, and a gate coupled to a gate of the first transistor, wherein the first or second transistor is a tipless transistor.

Abstract: A ring oscillator is disclosed according to certain aspects of the present disclosure. The ring oscillator include N flip-flops, each of the N flip-flops having a data input, a clock input, and an output, wherein N is an integer greater than 1. In certain aspects, the output of each of the N flip-flops is coupled to the clock input of an adjacent other one of the N flip-flops, the output of each of the N flip-flops is coupled to a reset input or a preset input of a non-adjacent other one of the N flip-flops, and the data input of each of the N flip-flops is coupled to a voltage line or a ground line.

Abstract: An integrated circuit (IC), including a substrate and back-end-of-line (BEOL) layers on the substrate is described. The IC includes a sensor in a BEOL layer (Mx) of the BEOL layers. The BEOL sensor includes conductive traces and shield traces interdigitated with the conductive traces in the BEOL layer Mx. The BEOL sensor also includes a first ground shield in a BEOL layer Mx?1, and a second ground shield in a BEOL layer Mx+1. The BEOL sensor further includes logic configured to ground/float the shield traces.

Abstract: An integrated circuit can include a plurality of first transistors formed in a substrate and having gate lengths of less than one micron and at least one tipless transistor formed in the substrate and having a source-drain path coupled between a circuit node and a first power supply voltage. In addition or alternatively, an integrated circuit can include minimum feature size transistors; a signal driving circuit comprising a first transistor of a first conductivity type having a source-drain path coupled between a first power supply node and an output node, and a second transistor of a second conductivity type having a source-drain path coupled between a second power supply node and the output node, and a gate coupled to a gate of the first transistor, wherein the first or second transistor is a tipless transistor.

Abstract: An integrated circuit can include a plurality of first transistors formed in a substrate and having gate lengths of less than one micron and at least one tipless transistor formed in the substrate and having a source-drain path coupled between a circuit node and a first power supply voltage. In addition or alternatively, an integrated circuit can include minimum feature size transistors; a signal driving circuit comprising a first transistor of a first conductivity type having a source-drain path coupled between a first power supply node and an output node, and a second transistor of a second conductivity type having a source-drain path coupled between a second power supply node and the output node, and a gate coupled to a gate of the first transistor, wherein the first or second transistor is a tipless transistor.

Abstract: Aspects of the disclosure includes a transistor-under-test (TUT) to charge/discharge a capacitor; changing an oscillation state when a capacitor voltage crosses a threshold and turning OFF the TUT; discharging the capacitor using the TUT; commencing precharging the capacitor after detecting the capacitor reaches a transition voltage; commencing discharging the capacitor after a precharger time delay; sustaining a relaxation oscillator waveform, wherein the relaxation oscillator waveform is based on turning OFF/ON the TUT; and generating a digital representation of a TUT current associated with a relaxation oscillator period of the relaxation oscillator waveform.

Abstract: An integrated circuit can include a plurality of first transistors formed in a substrate and having gate lengths of less than one micron and at least one tipless transistor formed in the substrate and having a source-drain path coupled between a circuit node and a first power supply voltage. In addition or alternatively, an integrated circuit can include minimum feature size transistors; a signal driving circuit comprising a first transistor of a first conductivity type having a source-drain path coupled between a first power supply node and an output node, and a second transistor of a second conductivity type having a source-drain path coupled between a second power supply node and the output node, and a gate coupled to a gate of the first transistor, wherein the first or second transistor is a tipless transistor.

Abstract: A system and method for managing an electrical distribution system in a facility is disclosed. In one aspect, the method may include receiving at a computer system from a monitoring system data related to actual energy use of components of the electrical distribution system, receiving at the computer system a request for a modification to the electrical distribution system, using the computer system, providing a revised electrical distribution system design based on the request and the data related to actual energy use using a system optimization function for the electrical distribution system, modifying the electrical distribution system in accordance with the revised electrical distribution system design to provide a modified electrical distribution system in the facility, and receiving at the computer system from the monitoring system data related to actual energy use of components of the modified electrical distribution system.

Abstract: An integrated circuit can include a plurality of first transistors formed in a substrate and having gate lengths of less than one micron and at least one tipless transistor formed in the substrate and having a source-drain path coupled between a circuit node and a first power supply voltage. In addition or alternatively, an integrated circuit can include minimum feature size transistors; a signal driving circuit comprising a first transistor of a first conductivity type having a source-drain path coupled between a first power supply node and an output node, and a second transistor of a second conductivity type having a source-drain path coupled between a second power supply node and the output node, and a gate coupled to a gate of the first transistor, wherein the first or second transistor is a tipless transistor.

Abstract: A system having an integrated circuit (IC) device can include a die formed on a semiconductor substrate and having a plurality of first wells formed therein, the first wells being doped to at least a first conductivity type; a global network configured to supply a first global body bias voltage to the first wells; and a first bias circuit corresponding to each first well and configured to generate a first local body bias for its well having a smaller setting voltage than the first global body bias voltage; wherein at least one of the first wells is coupled to a transistor having a strong body coefficient formed therein, which transistor may be a transistor having a highly doped region formed below a substantially undoped channel, the highly doped region having a dopant concentration greater than that the corresponding well.

Abstract: An integrated circuit can include a plurality of first transistors formed in a substrate and having gate lengths of less than one micron and at least one tipless transistor formed in the substrate and having a source-drain path coupled between a circuit node and a first power supply voltage. In addition or alternatively, an integrated circuit can include minimum feature size transistors; a signal driving circuit comprising a first transistor of a first conductivity type having a source-drain path coupled between a first power supply node and an output node, and a second transistor of a second conductivity type having a source-drain path coupled between a second power supply node and the output node, and a gate coupled to a gate of the first transistor, wherein the first or second transistor is a tipless transistor.

Abstract: An integrated circuit can include a plurality of first transistors formed in a substrate and having gate lengths of less than one micron and at least one tipless transistor formed in the substrate and having a source-drain path coupled between a circuit node and a first power supply voltage. In addition or alternatively, an integrated circuit can include minimum feature size transistors; a signal driving circuit comprising a first transistor of a first conductivity type having a source-drain path coupled between a first power supply node and an output node, and a second transistor of a second conductivity type having a source-drain path coupled between a second power supply node and the output node, and a gate coupled to a gate of the first transistor, wherein the first or second transistor is a tipless transistor.

Abstract: A system having an integrated circuit (IC) device can include a die formed on a semiconductor substrate and having a plurality of first wells formed therein, the first wells being doped to at least a first conductivity type; a global network configured to supply a first global body bias voltage to the first wells; and a first bias circuit corresponding to each first well and configured to generate a first local body bias for its well having a smaller setting voltage than the first global body bias voltage; wherein at least one of the first wells is coupled to a transistor having a strong body coefficient formed therein, which transistor may be a transistor having a highly doped region formed below a substantially undoped channel, the highly doped region having a dopant concentration greater than that the corresponding well.

Abstract: A system having an integrated circuit (IC) device can include a die formed on a semiconductor substrate and having a plurality of first wells formed therein, the first wells being doped to at least a first conductivity type; a global network configured to supply a first global body bias voltage to the first wells; and a first bias circuit corresponding to each first well and configured to generate a first local body bias for its well having a smaller setting voltage than the first global body bias voltage; wherein at least one of the first wells is coupled to a transistor having a strong body coefficient formed therein, which transistor may be a transistor having a highly doped region formed below a substantially undoped channel, the highly doped region having a dopant concentration greater than that the corresponding well.

Abstract: An integrated circuit can include a plurality of first transistors formed in a substrate and having gate lengths of less than one micron and at least one tipless transistor formed in the substrate and having a source-drain path coupled between a circuit node and a first power supply voltage. In addition or alternatively, an integrated circuit can include minimum feature size transistors; a signal driving circuit comprising a first transistor of a first conductivity type having a source-drain path coupled between a first power supply node and an output node, and a second transistor of a second conductivity type having a source-drain path coupled between a second power supply node and the output node, and a gate coupled to a gate of the first transistor, wherein the first or second transistor is a tipless transistor.