Abstract: 1. In a method for forming a semiconductor structure utilizing a semiconductor body, forming a grid structure in the semiconductor body, forming a support structure upon the grid structure, removing only a portion of the semiconductor body to provide a semiconductor body which has a substantially uniform thickness in the vicinity of the grid structure and in which the grid structure does not intercept the exposed surface of the semiconductor body, and forming additional grid structure in the semiconductor body joining the first named grid structure so that islands of semiconductor material are formed in the semiconductor body which are isolated from each other and from the support structure.23.

Abstract: Method for making a semiconductor structure having isolated islands of semiconductor material from a semiconductor body by forming a first layer of insulating material on a surface of the body having a first support structure upon the layer of insulating material and then forming grooves in the semiconductor body which extend to the layer of insulating material formed from the semiconductor body. A second layer of insulating material is then formed on the exposed surfaces of the islands. A second support structure is then formed on the second layer of insulating material. Thereafter, the first support structure is removed and circuit devices are fabricated in the isolated islands.