Abstract: The present invention discloses a method for generating high sphericity seed for the operation of a fluidized bed reactor to produce granular polysilicon. The method comprises: using fluidized bed granular silicon as a raw material, passing through a roll crusher apparatus to fracture, the roll crusher apparatus comprises at least one set of rollers, by adjusting the roller gap width between the sets of rollers, the silicon particles which size larger than the roller gap width are crushed, the silicon particles which size smaller than the roller gap width directly pass through the gap, thereby generating the high sphericity seed, then recycle back into fluidized bed reactor for reaction and generate granular silicon. According to the present invention, the generating seeds have a high sphericity and narrow PSD, compared to the low sphericity seeds, the porosity of the FBR in present invention is lower, and easier to avoid the formation of silicon powder and other negative impact.

Abstract: In one embodiment, a method for cooling a reaction effluent gas includes feeding a sufficient amount of a suitable silicon source cooling gas into a stream of the reaction effluent gas, wherein the reaction effluent gas is produced by a thermal decomposition of at least one silicon source gas in a reactor, and wherein sufficient amount of the suitable silicon source cooling gas is defined based a concentration of the at least one chemical species in the reaction effluent gas; cooling the reaction effluent gas to a sufficient temperature so that: the cooled reaction effluent gas is capable of being handled by a material that is not suitable for handling the reaction effluent gas.

Abstract: In an embodiment, a reactor includes a section, wherein at least a portion of the section includes a base layer, wherein the base layer has a first composition that contains a silicide-forming metal element; and a silicide coating layer, wherein the silicide coating layer is formed by a process of exposing, at a first temperature above 600 degrees Celsius and a sufficient low pressure, the base layer having a sufficient amount of the silicide-forming metal element to a sufficient amount of a silicon source gas having a sufficient amount of silicon element, wherein the silicon source gas is capable of decomposing to produce the sufficient amount of silicon element at a second temperature below 1000 degrees Celsius; reacting the sufficient amount of the silicide-forming metal element with the sufficient amount of silicon element, and forming the silicide coating layer.

Abstract: In one embodiment, a method for cooling a reaction effluent gas includes feeding a sufficient amount of a suitable silicon source cooling gas into a stream of the reaction effluent gas, wherein the reaction effluent gas is produced by a thermal decomposition of at least one silicon source gas in a reactor, and wherein sufficient amount of the suitable silicon source cooling gas is defined based a concentration of the at least one chemical species in the reaction effluent gas; cooling the reaction effluent gas to a sufficient temperature so that: the cooled reaction effluent gas is capable of being handled by a material that is not suitable for handling the reaction effluent gas.

Abstract: In one embodiment, a method for cooling a reaction effluent gas includes feeding a sufficient amount of a suitable silicon source cooling gas into a stream of the reaction effluent gas, wherein the reaction effluent gas is produced by a thermal decomposition of at least one silicon source gas in a reactor, and wherein sufficient amount of the suitable silicon source cooling gas is defined based a concentration of the at least one chemical species in the reaction effluent gas; cooling the reaction effluent gas to a sufficient temperature so that: the cooled reaction effluent gas is capable of being handled by a material that is not suitable for handling the reaction effluent gas.

Abstract: In one embodiment, the instant invention includes a method having steps of: feeding a fluidizing gas stream having at least 80 percent of halogenated silicon source gas or mixture of halogenated silicon source gases to fluidize silicon seeds in a reactor, achieving the fluidization of silicon seeds in a reaction zone prior to when the fluidizing gas stream reaches at least 600 degrees Celsius; heating the fluidized silicon seeds residing within the reaction zone to a sufficient reaction temperature to result in more than 50% of the equilibrium conversion for the thermal decomposition reaction in the reaction zone of the reactor; and maintaining the fluidizing gas stream at the sufficient reaction temperature and a sufficient residence time within the reaction zone hereby resulting in more than 50% of the equilibrium conversion for the thermal decomposition reaction in a single stage within the reaction zone to produce an elemental silicon.

Abstract: In an embodiment, a surface of the present invention comprises of at least one base layer, wherein the at least one base layer contains at least one silicide-forming metal element; and at least one silicide coating layer, wherein the at least one silicide coating layer is formed by a process of: i) exposing the at least one base layer having a sufficient amount of the at least one silicide-forming metal element to a sufficient amount of at least one silicon source gas having a sufficient amount of silicon element, ii) reacting the sufficient amount of the at least one silicide-forming metal element with the sufficient amount of silicon element, and iii) forming the at least one silicide coating layer.

Abstract: In one embodiment, a method includes feeding at least one silicon source gas and polysilicon silicon seeds into a reaction zone; maintaining the at least one silicon source gas at a sufficient temperature and residence time within the reaction zone so that a reaction equilibrium of a thermal decomposition of the at least one silicon source gas is substantially reached within the reaction zone to produce an elemental silicon; wherein the decomposition of the at least one silicon source gas proceeds by the following chemical reaction: 4HSiCl3??Si+3SiCl4+2H2, wherein the sufficient temperature is a temperature range between about 600 degrees Celsius and about 1000 degrees Celsius; and c) maintaining a sufficient amount of the polysilicon silicon seeds in the reaction zone so as to result in the elemental silicon being deposited onto the polysilicon silicon seeds to produce coated particles.

Abstract: In one embodiment, a method for cooling a reaction effluent gas includes feeding a sufficient amount of a suitable silicon source cooling gas into a stream of the reaction effluent gas, wherein the reaction effluent gas is produced by a thermal decomposition of at least one silicon source gas in a reactor, and wherein sufficient amount of the suitable silicon source cooling gas is defined based a concentration of the at least one chemical species in the reaction effluent gas; cooling the reaction effluent gas to a sufficient temperature so that: the cooled reaction effluent gas is capable of being handled by a material that is not suitable for handling the reaction effluent gas.

Abstract: In an embodiment, a reactor includes a section, wherein at least a portion of the section includes a base layer, wherein the base layer has a first composition that contains a silicide-forming metal element; and a silicide coating layer, wherein the silicide coating layer is formed by a process of exposing, at a first temperature above 600 degrees Celsius and a sufficient low pressure, the base layer having a sufficient amount of the silicide-forming metal element to a sufficient amount of a silicon source gas having a sufficient amount of silicon element, wherein the silicon source gas is capable of decomposing to produce the sufficient amount of silicon element at a second temperature below 1000 degrees Celsius; reacting the sufficient amount of the silicide-forming metal element with the sufficient amount of silicon element, and forming the silicide coating layer.

Abstract: A process produces a glass overcladding tube from a silica gel body. The process includes passing the gel body through a hot zone under conditions that cause partial sintering of the gel body and repassing the gel body through the hot zone under conditions that further sinter the gel body into a glass overcladding tube.

Abstract: A process produces a glass overcladding tube from a silica gel body. The process includes passing the gel body through a hot zone under conditions that cause partial sintering of the gel body and repassing the gel body through the hot zone under conditions that further sinter the gel body into a glass overcladding tube.

Abstract: A process deals with gaseous by-products and tarry materials during formation of sol-gel bodies. Gaseous products from a dehydroxylation reactor pass into a gas-fluid contactor. During the early stages of heat treatment, an aqueous acid solution is recirculated through the contactor to trap basic and/or water soluble organic gaseous materials. The resultant solution and non-condensing gases pass into a reservoir. Volatile, undissolved organics exit from the reservoir with non-condensing reactor gases and are treated. Once the organics have burned out of the sol-gel body, recirculation of the aqueous acid solution is ceased, and the gas-fluid contactor is flushed. The water flow is then ceased and dry nitrogen is provided to the contactor. During the next stage of the sol-gel heat treatment, gaseous products from the dehydroxylation reactor pass through the contactor into the caustic scrubber. Once the heat treatment is complete, the contactor is flushed.

Abstract: A process for enhancing the performance of resist polymers in lithographic processes for device fabrication is disclosed. The resist polymers contain acid labile functional groups. When these functional groups are removed and replaced by hydrogen, the polymer becomes more soluble in the aqueous base developer solutions used in lithographic processes. A portion of the acid-labile functional groups are cleaved from the polymer to obtain a resist polymer with increased sensitivity, improved adhesion, and reduced film shrinkage during post-exposure bake. The acid labile functional groups are cleaved by dissolving the polymer in a suitable solvent and subjecting the mixture to increased temperature until the desired number of acid labile functional groups are cleaved from the polymer. The polymer is then recovered from the mixture and employed as a resist in a lithographic process for device fabrication.

Abstract: Polymers formed from monomers such as chloromethyl styrene and trimethylgermylmethyl methacrylate form negative-acting resists that are extremely sensitive to exposure by electron beam and deep UV radiation. These materials are particularly useful in bilevel resist applications for fabricating masks or for device processing.

Abstract: Apparatus for disintegrating solids resulting from partial hydrolysis of cellulosic or lignocellulosic material comprising a cylindrical chamber having a perforated mid portion and a plurality of hammer elements supported for rotation within and coaxially to the chamber with their tips close to the perforated mid portion of the chamber. This disintegrator may be connected to the lower end of a hydrolyzer to receive the product of hydrolysis from such chamber.