Patents by Inventor David A Muller

David A Muller has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of fabricating a composite gate dielectric layer
    Patent number: 7253063
    Abstract: A semiconductor device having composite dielectric layer formed between a silicon substrate and a gate electrode. The composite gate dielectric layer including a layer of silicon oxide, SiOx?2, having a dielectric constant of greater than about 3.9 and about 12 or less, and a complementary dielectric layer for inhibiting the flow of leakage current through the composite dielectric layer.
    Type: Grant
    Filed: August 23, 2002
    Date of Patent: August 7, 2007
    Assignee: Lucent Technologies Inc.
    Inventors: David A Muller, Gregory L. Timp, Glen David Wilk
  • Silicon oxide based gate dielectric layer
    Patent number: 6844076
    Abstract: A semiconductor device having a dielectric layer formed between a first and a second conductive layer. The dielectric layer comprising a layer of silicon oxide SiOX?2, having a dielectric constant greater than about 3.9 and less than or equal to about 12.
    Type: Grant
    Filed: October 30, 2003
    Date of Patent: January 18, 2005
    Assignee: Lucent Technologies Inc.
    Inventors: David A Muller, Gregory L. Timp
  • Silicon oxide based gate dielectric layer
    Patent number: 6693051
    Abstract: A semiconductor device having a dielectric layer formed between a first and a second conductive layer. The dielectric layer comprising a layer of silicon oxide, SiOX≦2, having a dielectric constant greater than about 3.9 and less than or equal to about 12.
    Type: Grant
    Filed: February 1, 2001
    Date of Patent: February 17, 2004
    Assignee: Lucent Technologies Inc.
    Inventors: David A Muller, Gregory L. Timp