Abstract: A method and apparatus are provided for detecting contact between a wafer blade of a wafer-handling robot and a component in a wafer-handling system. The robot moves the wafer blade within the system while the wafer blade is maintained at an electrical potential, which is different from an electrical potential of the component. Contact between the wafer blade and the component is detected by sensing a change in the electrical potential of the wafer blade during the contact.

Abstract: A method and apparatus are provided for detecting contact between a wafer blade of a wafer-handling robot and a component in a wafer-handling system. The robot moves the wafer blade within the system while the wafer blade is maintained at an electrical potential, which is different from an electrical potential of the component. Contact between the wafer blade and the component is detected by sensing a change in the electrical potential of the wafer blade during the contact.

Abstract: A substrate processing chamber of the type adapted for processing a substrate having edges and a surface at a reduced pressure and elevated temperature relative to ambient. Typically, a combination of the elevated temperature and the reduced pressure tends to produce spallation of the substrate near the edges, which spallation produces chips that are redeposited across the surface of the substrate. Such chips inhibit proper operation of subsequent processing of the substrate. The improvement is a shield disposed in proximity to the surface of the substrate, but not touching the substrate. The shield forms a perimeter barrier at a circumference of the substrate that is interior to the edges of the substrate where the spallation occurs, and the shield prohibits the chips from redepositing across portions of the surface of the substrate that are interior to the perimeter barrier.

Abstract: A system for indicating an amount of a process liquid contained within an interior of an ampoule. A first conduit is in selective fluid communication with the interior of the ampoule, and has a first opening configured for disposal below an upper surface of the process liquid. The first conduit introduces a carrier gas into the interior of the ampoule. A second conduit is also in selective fluid communication with the interior of the ampoule, and has a second opening configured for disposal above the upper surface of the process liquid. The second conduit receives the carrier gas from the interior of the ampoule. A pressure differential sensor is disposed between and is in selective fluid communication with the first conduit and the second conduit. The pressure differential sensor senses a pressure differential between the first conduit and the second conduit.