Abstract: An electrically operated, single cell memory element comprising: a volume of memory material defining a single-cell memory element, the memory material comprising a heterogeneous mixture of a phase-change material and a dielectric material; and means for delivering an electrical signal to at least a portion of the volume of memory material. An electrically operated, single-cell memory element comprising: a volume of memory material defining the single-cell memory element, the memory material comprising a phase-change material and a dielectric material where the phase-change material has a plurality of detectable resistivity values and can be set directly to one of the resistivity values without the need to be set to a specific starting or erased resistivity value, regardless of the previous resistivity value of the material, in response to an electrical signal; and means for delivering the electrical signal to at least a portion of the volume of memory material.

Abstract: A conveyor oven is capable of heating precisely and uniformly an article to be baked as the article is conveyed through the oven at a designated speed. Precise and uniform heating is promoted by 1) a combination supply/return duct assembly positioned above the conveyor and configured to promote uniform airflow towards the upper surface of the conveyor, and 2) discharge orifices configured to further promote uniform airflow from the supply ducts without generating whistling or other unpleasant noises. The arrangement of this supply/return duct assembly, incorporating both supply and return ducts in the same plane, also promotes a low profile oven--an important consideration in applications in which minimizing space is a priority. The profile of the oven is reduced further by placing the heating element beneath the conveyor and by configuring supply and return passages to circulate air between the heat source and the supply/return duct assembly using minimal space.

Abstract: A composite memory material comprising a mixture of active phase-change memory material and inactive dielectric material. The phase-change material includes one or more elements selected from the group consisting of Te, Se, Ge, Sb, Bi, Pb, Sn, As, S, Si, P, O and mixtures or alloys thereof. A single cell memory element comprising the aforementioned composite memory material, and a pair of spacedly disposed contacts.

Abstract: An electrically operated, directly overwritable, multibit, single-cell memory element. The memory element includes a volume of memory material which defines the single cell memory element. The memory material is characterized by: (1) a large dynamic range of electrical resistance values; and (2) the ability to be set at one of a plurality of resistance values within the dynamic range in response to selected electrical input signals so as to provide the single cell with multibit storage capabilities, and (3) the ability of at least a filamentary portion to be set, by the selected electrical singal to any resistance value in the dynamic range, regardless of the previous resistance value of the material. The memory element also includes a pair of spacedly disposed contacts for supplying the electrical input signal to set the memory material to a selected resistance value within the dynamic range.

Abstract: Disclosed herein is a solid state, directly overwritable, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, single cell memory element having reduced switching current requirements and an increased thermal stability of data retention. The memory element includes a volume of memory material which is a transition metal modified chalcogen. The transition metal may be selected from the group consisting of Nb, Pd, Pt and mixtures or alloys thereof. The memory material may further include at least one transition metal selected from the group consisting of Fe, Cr, Ni and mixtures or alloys thereof. The memory element exhibits orders of magnitude higher switching speeds at remarkably reduced switching energy levels.

Abstract: The present invention comprises an electrically operated, directly overwritable, multibit, single-cell memory element. The memory element includes a volume of memory material which defines the single cell memory element. The memory material is characterized by: (1) a large dynamic range of electrical resistance values; and (2) the ability to be set at one of a plurality of resistance values within said dynamic range in response to selected electrical input signals so as to provide said single cell with multibit storage capabilities. The memory element also includes a pair of spacedly disposed contacts for supplying the electrical input signal to set the memory material to a selected resistance value within the dynamic range. At least a filamentary portion of the singIe cell memory element being setable, by the selected electrical signal to any resistance value in said dynamic range, regardless of the previous resistance value of said material.

Abstract: A solid state, directly overwritable, electronic, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, multibit single cell memory or control array based upon the novel switching characteristics provided by said unique class of semiconductor materials characterized by a large dynamic range of reversible Fermi level positions. The memory or control elements from which the array is fabricated exhibit orders of magnitude higher switching speeds at remarkably reduced energy levels. The novel memory elements of the instant invention are in turn characterized, inter alia, by numerous stable and non-volatile detectable configurations of local atomic and/or electrode order, which configurations can be selectively and repeatably accessed by electric input signals of yawing energy level.

Abstract: The present invention comprises an electrically operated, directly overwritable, multibit, single-cell memory element. The memory element includes a volume of memory material which defines the single cell memory element. The memory material is characterized by: (1) a large dynamic range of electrical resistance values; and (2) the ability to be set at one of a plurality of resistance values within said dynamic range in response to selected electrical input signals so as to provide said single cell with multibit storage capabilities. The memory element also includes a pair of spacedly disposed contacts for supplying the electrical input signal to set the memory material to a selected resistance value within the dynamic range. At least a filamentary portion of the single cell memory element being setable, by the selected electrical signal to any resistance value in said dynamic range, regardless of the previous resistance value of said material.

Abstract: Disclosed herein is a solid state, directly overwritable, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, single cell memory element having reduced switching current requirements and increased write/erase cycle life. The structurally modified memory element includes an electrical contact formed of amorphous silicon, either alone or in combination with a layer of amorphous carbon layer. The memory element exhibits orders of magnitude higher switching speeds at remarkably reduced switching energy levels. The novel memory elements of the instant invention are further characterized, inter alia, by at least two stable and non-volatile detectable configurations of local atomic and/or electronic order, which configurations can be selectively and repeatably accessed by electrical input signals of designated energies.

Abstract: A unique class of microcrystalline semiconductor materials which can be modulated, within a crystalline phase, to assume any one of a large dynamic range of different Fermi level positions while maintaining a substantially constant band gap over the entire range, even after a modulating field has been removed. A solid state, directly overwritable, electronic and optical, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, multibit single cell memory based upon the novel switching characteristics provided by said unique class of semiconductor materials, which memory exhibits orders of magnitude higher switching speeds at remarkably reduced energy levels. The novel memory of the instant invention is in turn characterized, inter alia, by numerous stable and non-volatile detectable configurations of local atomic order, which configurations can be selectively and repeatably accessed by input signals of varying levels.

Abstract: A solid state, directly overwritable, electronic, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, multibit single cell memory based upon phenomenologically novel electrical switching characteristics provided by a unique class of semiconductor materials in unique configurations, which memory exhibits orders of magnitude higher switching speeds at remarkably reduced energy levels. The novel memory of the instant invention is characterized, inter alia, by numerous stable and truly non-volatile detectable configurations of local atomic and/or electronic order, which can be selectively and repeatably accessed by electrical input signals of varying pulse voltage and duration.

Abstract: An electrically erasable phase change memory utilizing a stoichiometrically and volumetrically balanced phase change material in which both the switching times and the switching energies required for the transitions between the amorphous and the crystalline states are substantially reduced below those attainable with prior art electrically erasable phase change memories. One embodiment of the invention comprises an integrated circuit implementation of the memory in a high bit density configuration in which manufacturing costs are correspondingly reduced and performance parameters are further improved.

Abstract: A state changeable memory alloy and device employing same. The memory alloy is capable of changing from a first state to a second state in response to the input of energy, such as projected optical beam energy, electrical energy or thermal energy. The alloy has a first detectable characteristic when in the first state and a second detectable characteristic when in the second state. It is further characterized in that the first state comprises a single phase, and the second state comprises either: (1) a single phase having the same composition as the first phase or (2) a plurality of phases which have substantially similar crystallization temperatures and kinetics.

Abstract: Disclosed is a device and method for the storage and conversion of a light input into a corresponding output with light from another source. The device includes an improved liquid crystal light valve having as a photosensor layer a deposited memory semiconductor material which is reversibily convertible between a first stable, relatively high electrical resistance condition and a second stable, relatively low electrical resistance condition. Each change of state or condition will remain after cessation of the input until stimulated to reverse to the other state, thereby achieving a storage or memory function.

Abstract: Disclosed is an optical data storage device and a method of making the device. The device has a thin film of a multi-component, phase changeable, chalcogenide material. The thin film is prepared by vacuum deposition of a substantially non-convecting, multi-component, chalcogenide containing first source. The multicomponent source is converted to a non-condensed state, and the non-condensed material is deposited onto the substrate to form a deposit having substantial source/deposit compositional equivalence and the substantial absence of concentration gradients.

Abstract: There is disclosed a new and improved method for making a stamping master for video disk replication wherein a film of material which is reversibly convertible between two stable states, one having a high electrical conductivity and the other having a low electrical conductivity, is deposited on a substrate while in one of the states. The material is then imaged with information in coded form by converting selected areas of the film to the other state in a predetermined pattern corresponding to the coded information. The conversion can be accomplished by light, electromagnetic energy or heat.At this stage, an intermediate subassembly, composed of the imaged film on the substrate, is formed which can be read for accuracy by detecting the state of the selectively converted areas with respect to the rest of the film. Corrections can be made by converting the state of selected areas of the film as required.

Abstract: There is disclosed a new and improved apparatus for making a stamping master for video disk replication wherein a film of material which is reversibly convertible between two stable states, one having a high electrical conductivity and the other having a low electrical conductivity, is deposited on a substrate while in one of the states. The material is then imaged with information in coded form by converting selected areas of the film to the other state in a predetermined pattern corresponding to the coded information. The conversion can be accomplished by light, electromagnetic energy or heat.At this stage, an intermediate subassembly, composed of the imaged film on the substrate, is formed which can be read for accuracy by detecting the state of the selectively converted areas with respect to the rest of the film. Corrections can be made by converting the state of selected areas of the film as required.

Abstract: Selected areas of a layer comprising an imaging material in the form of a tellurium tetrahalide adduct of an aromatic amine, exemplified by a tellurium tetrachloride adduct of dimethyl aniline, which adduct is free from any diazo groups, in the presence of a spectral photosensitizer, are subjected to the imaging effect of imaging energy, and of development, advantageously of developing energy, causing a change in the tellurium-organic imaging material in the imaged areas accompanied by a change in the detectable characteristic of the imaging material in the imaged areas. The aforesaid imaging material is especially advantageously extended in a matrix of a polymeric or resinous film-forming material. The invention in its generally most advantageous form involves an imaging step employing imaging energy and producing a latent image, followed by a heat development step to produce the detectable recorded information or image.