Patents by Inventor David A. Walch

David A. Walch has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Distributed high voltage JFET
    Patent number: 7910417
    Abstract: A Junction Field Effect Transistor (JFET) can be fabricated with a well region that include a channel region having an average dopant concentration substantially less the average doping concentration of the remaining portions of the well region. The lower average doping concentration of channel region compared to the remaining portions of the well region reduces the pinch-off voltage of the JFET.
    Type: Grant
    Filed: July 21, 2008
    Date of Patent: March 22, 2011
    Assignee: Texas Instruments Incorporated
    Inventors: Philip L. Hower, David A. Walch, John Lin, Steven L. Merchant
  • Distributed high voltage JFET
    Patent number: 7605412
    Abstract: A Junction Field Effect Transistor (JFET) can be fabricated with a well region that include a channel region having an average dopant concentration substantially less the average doping concentration of the remaining portions of the well region. The lower average doping concentration of channel region compared to the remaining portions of the well region reduces the pinch-off voltage of the JFET.
    Type: Grant
    Filed: September 22, 2006
    Date of Patent: October 20, 2009
    Assignee: Texas Instruments Incorporated
    Inventors: Philip L. Hower, David A. Walch, John Lin, Steven L. Merchant
  • DISTRIBUTED HIGH VOLTAGE JFET
    Publication number: 20080299716
    Abstract: A Junction Field Effect Transistor (JFET) can be fabricated with a well region that include a channel region having an average dopant concentration substantially less the average doping concentration of the remaining portions of the well region. The lower average doping concentration of channel region compared to the remaining portions of the well region reduces the pinch-off voltage of the JFET.
    Type: Application
    Filed: July 21, 2008
    Publication date: December 4, 2008
    Inventors: Philip L. Hower, David A. Walch, John Lin, Steven L. Merchant
  • Distributed high voltage JFET
    Patent number: 7417270
    Abstract: A Junction Field Effect Transistor (JFET) can be fabricated with a well region that include a channel region having an average dopant concentration substantially less the average doping concentration of the remaining portions of the well region. The lower average doping concentration of channel region compared to the remaining portions of the well region reduces the pinch-off voltage of the JFET.
    Type: Grant
    Filed: June 23, 2004
    Date of Patent: August 26, 2008
    Assignee: Texas Instruments Incorporated
    Inventors: Philip L. Hower, David A. Walch, John Lin, Steven L. Merchant