Abstract: In some implementations, an electro-optic waveguide modulator includes a deep-etched waveguide. A first cladding is disposed on a top surface of the deep-etched waveguide. A second cladding is disposed on a bottom surface of the deep-etched waveguide. The deep-etched waveguide has a length that extends in a first direction and a width that extends in a second direction. The width of the deep-etched waveguide is non-constant along at least a portion of the length of the deep-etched waveguide. For example, a difference between a maximum width of the deep-etched waveguide and a minimum width of the deep-etched waveguide along at least the portion of the length of the deep-etched waveguide satisfies a width difference threshold that is equal to 10% of the maximum width.

Abstract: An electro-optic modulator may include a radio frequency (RF) modulation region including a first optical waveguide, a second optical waveguide, a first set of electrode segments, a second set of electrode segments, and a conductive strap. The first optical waveguide may propagate a first optical signal. The second optical waveguide may propagate a second optical signal. The first set of electrode segments may apply a first RF signal to the first optical waveguide. The second set of electrode segments may apply a second RF signal to the second optical waveguide. The conductive strap may enable photocurrent generated in the first optical waveguide and the second optical waveguide and flowing through a doped layer below the first optical waveguide and the second optical waveguide to be extracted from the electro-optic modulator. The conductive strap may be ohmically contacted with the doped layer.

Abstract: A waveguide structure for use in a balanced push-pull Mach Zehnder modulator. The waveguide structure comprises a plurality of layers. The layers comprise, in order: an insulating or semi-insulating substrate; an lower cladding layer; an waveguide core layer; and an upper cladding layer. The lower cladding layer, waveguide core layer, and upper cladding layer are etched to form: a signal waveguide and a ground waveguide, which are connected via the lower cladding layer; and a signal line and a ground line, each located adjacent to the respective waveguide, and each connected to the respective waveguide via one or more respective resistive structures connected in the plane of the lower cladding layer.

Abstract: A waveguide structure for use in a balanced push-pull Mach Zehnder modulator. The waveguide structure comprises a plurality of layers. The layers comprise, in order: an insulating or semi-insulating substrate; an lower cladding layer; an waveguide core layer; and an upper cladding layer. The lower cladding layer, waveguide core layer, and upper cladding layer are etched to form: a signal waveguide and a ground waveguide, which are connected via the lower cladding layer; and a signal line and a ground line, each located adjacent to the respective waveguide, and each connected to the respective waveguide via one or more respective resistive structures connected in the plane of the lower cladding layer.

Abstract: The invention relates to optical modulation devices and, in particular, monolithically integrated optical modulation devices. Disclosed herein is a monolithically integrated optical modulation device (200) that comprises: an input optical port (210); an output optical port (215); and an optical waveguide for guiding light from the input optical port to the output optical port. A portion of the optical waveguide is split into at least two branches. The waveguide is configured to cause a net 180° change in direction of the light while guiding said light from the input optical port to the output optical port such that the input optical port and the output optical port are positioned on a first edge of the device. At least some of the net 180° change in direction is achieved within the branches of the waveguide.

Abstract: A method of providing electrical isolation between subsections in a waveguide structure for a photonic integrated device, the structure comprising a substrate, a buffer layer and a core layer, the buffer layer being located between the substrate and the core and comprising a dopant of a first type, the first type being either n-type or p- type, the method comprising the steps of prior to adding any layer to a side of the core layer opposite to the buffer layer: selecting at least one area to be an electrical isolation region, applying a dielectric mask to a surface of the core layer opposite to the buffer layer, with a window in the mask exposing an area of the surface corresponding to the selected electrical isolation region, implementing diffusion of a dopant of a second type, the second type being of opposite polarity to the first type, and allowing the dopant of the second type to penetrate to the substrate to form a blocking junction.

Abstract: A method of providing electrical isolation between subsections in a waveguide structure for a photonic integrated device, the structure comprising a substrate, a buffer layer and a core layer, the buffer layer being located between the substrate and the core and comprising a dopant of a first type, the first type being either n-type or p- type, the method comprising the steps of prior to adding any layer to a side of the core layer opposite to the buffer layer: selecting at least one area to be an electrical isolation region, applying a dielectric mask to a surface of the core layer opposite to the buffer layer, with a window in the mask exposing an area of the surface corresponding to the selected electrical isolation region, implementing diffusion of a dopant of a second type, the second type being of opposite polarity to the first type, and allowing the dopant of the second type to penetrate to the substrate to form a blocking junction.

Abstract: The invention relates to optical modulation devices and, in particular, monolithically integrated optical modulation devices. Disclosed herein is a monolithically integrated optical modulation device (200) that comprises: an input optical port (210); an output optical port (215); and an optical waveguide for guiding light from the input optical port to the output optical port. A portion of the optical waveguide is split into at least two branches. The waveguide is configured to cause a net 180° change in direction of the light while guiding said light from the input optical port to the output optical port such that the input optical port and the output optical port are positioned on a first edge of the device. At least some of the net 180° change in direction is achieved within the branches of the waveguide.

Abstract: Sacrificial optical test structures are constructed upon a wafer of pre-cleaved optical chips for testing the optical functions of the pre-cleaved optical chips. The sacrificial optical structures are disabled upon the cleaving the optical chips from the wafer and the cleaved optical chips can be used for their desired end functions. The test structures may remain on the cleaved optical chips or they may be discarded.

Abstract: A monolithically integrated, tunable semiconductor laser with an optical waveguide, comprising a laser chip having epitaxial layers on a substrate and having first and second reflectors bounding an optical gain section and a passive section, wherein at least one of the reflectors is a distributed Bragg reflector section comprising a grating and configured to have a tunable reflection spectrum, wherein the laser is provided with a common earth electrode, wherein control electrodes are provided on the optical waveguide in at least the optical gain section and the at least one distributed Bragg reflector section, wherein the passive section is provided with an electrode or electrical tracking on the optical waveguide, the passive section is configured not to be drivable by an electrical control signal, and no grating is present within the passive section.

Abstract: A monolithically integrated, tunable semiconductor laser with an optical waveguide, comprising epitaxial layers on a substrate and having first and second reflectors bounding an optical gain section and a non-driven region, wherein at least one of the reflectors is a distributed Bragg reflector section configured to have a tunable reflection spectrum, wherein control electrodes are provided to at least the optical gain section, and the distributed Bragg reflector section, and wherein the non-driven region has a length of at least 100 ?m, is without an electrical contact directly contacting onto the epitaxially grown side of the non-driven region, and the non-driven region is without a reflective Bragg grating within the epitaxial layers of the non-driven region.

Abstract: Sacrificial optical test structures are constructed upon a wafer of pre-cleaved optical chips for testing the optical functions of the pre-cleaved optical chips. The sacrificial optical structures are disabled upon the cleaving the optical chips from the wafer and the cleaved optical chips can be used for their desired end functions. The test structures may remain on the cleaved optical chips or they may be discarded.

Abstract: A widely tunable multi-mode semiconductor laser containing only two electrically active sections, being an optical gain section and a tunable distributed Bragg reflector section adapted to reflect at a plurality of wavelengths, wherein the gain section is bounded by the tunable distributed Bragg reflector section and a broadband facet reflector, and wherein the tunable distributed Bragg reflector section comprises a plurality of discrete segments capable of being selectively tuned, wherein the reflection spectra of one or more segments of the tunable distributed Bragg reflector section can be tuned lower in wavelength to reflect with the reflection spectrum of a further segment of the tunable distributed Bragg reflector section to provide a wavelength range of enhanced reflectivity. An optical transmitter comprising a light source that is such a widely tunable multi-mode semiconductor laser.

Abstract: A monolithically integrated, tunable semiconductor laser with an optical waveguide, comprising a laser chip having epitaxial layers on a substrate and having first and second reflectors bounding an optical gain section and a passive section, wherein at least one of the reflectors is a distributed Bragg reflector section comprising a grating and configured to have a tunable reflection spectrum, wherein the laser is provided with a common earth electrode, wherein control electrodes are provided on the optical waveguide in at least the optical gain section and the at least one distributed Bragg reflector section, wherein the passive section is provided with an electrode or electrical tracking on the optical waveguide, the passive section is configured not to be drivable by an electrical control signal, and no grating is present within the passive section.

Abstract: Sacrificial optical test structures are constructed upon a wafer of pre-cleaved optical chips for testing the optical functions of the pre-cleaved optical chips. The sacrificial optical structures are disabled upon the cleaving the optical chips from the wafer and the cleaved optical chips can be used for their desired end functions. The test structures may remain on the cleaved optical chips or they may be discarded.

Abstract: A widely tunable multi-mode semiconductor laser containing only two electrically active sections, being an optical gain section and a tunable distributed Bragg reflector section adapted to reflect at a plurality of wavelengths, wherein the gain section is bounded by the tunable distributed Bragg reflector section and a broadband facet reflector, and wherein the tunable distributed Bragg reflector section comprises a plurality of discrete segments capable of being selectively tuned, wherein the reflection spectra of one or more segments of the tunable distributed Bragg reflector section can be tuned lower in wavelength to reflect with the reflection spectrum of a further segment of the tunable distributed Bragg reflector section to provide a wavelength range of enhanced reflectivity. An optical transmitter comprising a light source that is such a widely tunable multi-mode semiconductor laser.

Abstract: A monolithically integrated, tunable semiconductor laser with an optical waveguide, comprising epitaxial layers on a substrate and having first and second reflectors bounding an optical gain section and a non-driven region, wherein at least one of the reflectors is a distributed Bragg reflector section configured to have a tunable reflection spectrum, wherein control electrodes are provided to at least the optical gain section, and the distributed Bragg reflector section, and wherein the non-driven region has a length of at least 100 ?m, is without an electrical contact directly contacting onto the epitaxially grown side of the non-driven region, and the non-driven region is without a reflective Bragg grating within the epitaxial layers of the non-driven region.

Abstract: An optical wavelength monitor photodiode integrated on a wafer and/or an optical device and coupled to optical components thereof provides wavelength measurement. The optical wavelength monitor includes a photodiode configured to output a signal that is representative of a wavelength of the light. An additional photodiode may be included in the optical wavelength monitor, each photodiode differing from the other in operating characteristics. The monitor may be used in testing the optical device while in wafer form and when the optical device has been cleaved from the wafer at the bar level. Testing/monitoring of the optical device may also be performed during use, for example, to control the wavelength of a laser such as a tunable laser.

Abstract: There is described a laser assembly for providing light at a switchable output wavelength. The assembly comprises first and second tuneable lasers, each configurable to emit light at a laser wavelength chosen from a range of wavelengths. Light is transmitted from the first laser while the second laser is retuned to change the chosen laser wavelength thereof. Each laser comprises one or more thermally sensitive control components for controlling the operation of the laser and an additional component electrode located adjacent to at least one of the one or more control components. The laser is configured so that the sum of electrical currents supplied to each control component and its corresponding additional component remains substantially constant in use.

Abstract: An optical wavelength monitor photodiode integrated on a wafer and/or an optical device and coupled to optical components thereof provides wavelength measurement. The optical wavelength monitor includes a photodiode configured to output a signal that is representative of a wavelength of the light. An additional photodiode may be included in the optical wavelength monitor, each photodiode differing from the other in operating characteristics. The monitor may be used in testing the optical device while in wafer form and when the optical device has been cleaved from the wafer at the bar level. Testing/monitoring of the optical device may also be performed during use, for example, to control the wavelength of a laser such as a tunable laser.