Abstract: Devices and methods that facilitate modular quantum systems with discreet levels of connectivity are provided. In various embodiments, a quantum computing device can comprise one or more modules comprising at least qubits, buses, and readout structures; a plurality of couplers, wherein the plurality of couplers comprises at least two couplers selected from a group consisting of: classical couplers, short-range couplers, and long-range couplers, that are adapted for coupling a plurality of the at least qubits, buses, and readout structures; and a connection from the one or more modules to one or more classical controllers external to a cryogenic environment comprising the one or more modules.

Abstract: A package structure comprises a first interposer, a second interposer, and a quantum chip. The first interposer comprises a first alignment feature. The second interposer comprises a second alignment feature. The quantum chip is bonded to the first interposer with an extended portion of the first quantum chip extending past a first edge of the first interposer. The first interposer and the second interposer are disposed with the first alignment feature engaging with the second alignment feature to cause alignment and coupling of one or more components on the extended portion of the first quantum chip with one or more components on the second interposer.

Abstract: A cryogenic electronics device includes a semiconductor chip. A substrate is flip-chip bonded to the semiconductor chip. A plurality of bump bonds are concentrated in a bump region of the semiconductor chip. A plurality of circuit elements are arranged in a predefined region of the semiconductor chip. The predefined region and the bump region are separate regions.

Abstract: A semiconductor device includes a device wafer having a first side and a second side, a bus located on the second side of the device wafer, and a top wafer having a first side and a second side. A plurality of qubits are located on the first side of the device wafer, and a first plurality of bump bonds located on the first side of the top wafer bond the top wafer with the second side of the device wafer.

Abstract: A modular quantum computing structure includes a plurality of attachment structures, at least some of the attachment structures having different thicknesses. At least one of a plurality of qubit chips is bonded to a first attachment structure of the plurality of attachment structures having a first thickness. A second attachment structure of the plurality of attachment structures arranged adjacent the first attachment structure has a second thickness different from the first thickness of the first attachment structure. At least one of the qubit chips bonded to the first attachment structure has a footprint extending beyond a footprint of the first interposer to overlap at least the second interposer.

Abstract: A quantum computing chip device provides an edge based capacitive, intra-chip connection. A first chip includes a first signal line with a distal end positioned proximate to or on an edge of the first chip and a proximal end positioned away from the edge of the first chip. A second chip includes a second signal line with a distal end positioned proximate to or on an edge of the second chip and a proximal end positioned away from the edge of the second chip. The first signal line and the second signal line are configured to conduct a signal. The second signal line of the second chip is disposed in alignment for a capacitive bus connection to the first signal line of the first chip.

Abstract: An electronic structure includes a first substrate having a first under bump metallization (UBM) region and a second UBM region formed thereon. One or more solder bumps is deposited onto the first UBM region. A downstop formed on the second UBM region is wider, shallower and more rigid than any one of the solder bumps formed on the first UBM region. A second substrate is joined to the first substrate by the one or more solder bumps located on the first UBM region, and a height of the downstop limits a distance between at least one of the first substrate and the second substrate, or between an object and at least one of the first substrate and the second substrate.

Abstract: A content distribution system includes content receivers that provide a plurality of blockchain databases that store transaction records associated with subscriber requests for content, and a computer system that processes those transaction records and enables authorized content receivers to output requested content.

Abstract: A method of applying a coating to a substrate includes ionic electrolytic plating a substrate submerged within an ionic liquid at ambient temperature, in ambient air, and at ambient pressure with aluminum. The ionic liquid includes imidazolium chloride compounds having aluminum chloride (AlCl3) and sodium dodecyl sulphate (C12H25NaO4S) in a mono ethylene glycol solution, and a deposition rate of the ionic electrolytic plating is controlled by a power supply within a temperature range between about 288 Kelvin (59° F.) to about 305 Kelvin (89° F.).

Abstract: A cryogenic system comprising a first cryogenic stage and a second cryogenic stage. A first signal line passing from the first cryogenic stage and is connected to a superconducting thermal break in the second cryogenic stage. A second signal line connecting the superconducting thermal break to a cryogenic device.

Abstract: A semiconductor device comprises a first chip layer, having a first chip layer front-side and a first chip layer back-side, a qubit chip layer, having a qubit chip layer front-side and a qubit chip layer back-side, the qubit chip layer front-side operatively coupled to the first chip layer front-side with a set of bump-bonds, a set of through-silicon vias (TSVs) connected to at least one of: the first chip layer back-side or the qubit chip layer back-side and a cap wafer metal bonded to at least one of: the qubit chip layer back-side or the first chip layer back-side.

Abstract: A cryogenic system comprising a first cryogenic stage and a second cryogenic stage. A first signal line passing from the first cryogenic stage and is connected to a superconducting thermal break in the second cryogenic stage. A second signal line connecting the superconducting thermal break to a cryogenic device.

Abstract: A quantum computing chip device provides an edge based capacitive, intra-chip connection. A first chip includes a first signal line with a distal end positioned proximate to or on an edge of the first chip and a proximal end positioned away from the edge of the first chip. A second chip includes a second signal line with a distal end positioned proximate to or on an edge of the second chip and a proximal end positioned away from the edge of the second chip. The first signal line and the second signal line are configured to conduct a signal. The second signal line of the second chip is disposed in alignment for a capacitive bus connection to the first signal line of the first chip.

Abstract: Techniques regarding qubit chip assemblies are provided. For example, one or more embodiments described herein can include an apparatus that can comprise a qubit chip positioned on an interposer chip. The apparatus can also comprise an electrical connector in direct contact with the interposer chip. The electrical connector can establish an electrical communication between a wire and a contact pad of the interposer chip that is coupled to the qubit chip.

Abstract: Systems and techniques that facilitate high-density flip-chip co-packages for superconducting qubits and parametric Josephson devices are provided. In various embodiments, a device can comprise a superconducting qubit wafer that can be coupled, by one or more first bump-bonds, to a parametric Josephson wafer. In various aspects, the device can further comprise a first underfill that surrounds the one or more first bump-bonds. In various instances, the first underfill can protect the parametric Josephson wafer from mechanical and/or chemical degradation associated with subsequent fabrication, processing, and/or handling of the superconducting qubit wafer.

Abstract: A cryogenic electronics device includes a semiconductor chip. A substrate is flip-chip bonded to the semiconductor chip. A plurality of bump bonds are concentrated in a bump region of the semiconductor chip. A plurality of circuit elements are arranged in a predefined region of the semiconductor chip. The predefined region and the bump region are separate regions.

Abstract: Devices and methods that facilitate modular quantum systems with discreet levels of connectivity are provided. In various embodiments, a quantum computing device can comprise one or more modules comprising at least qubits, buses, and readout structures; a plurality of couplers, wherein the plurality of couplers comprises at least two couplers selected from a group consisting of: classical couplers, short-range couplers, and long-range couplers, that are adapted for coupling a plurality of the at least qubits, buses, and readout structures; and a connection from the one or more modules to one or more classical controllers external to a cryogenic environment comprising the one or more modules.

Abstract: A quantum computing (QC) chip module includes an interposer chip having a footprint. A qubit chip bump is bonded to the interposer chip and arranged so that the qubit chip extends beyond the footprint of the interposer chip. The interposer chip extends beyond an edge of the qubit chip. A wiring harness is connected to the interposer chip.

Abstract: An electronic structure includes a first substrate having a first under bump metallization (UBM) region and a second UBM region formed thereon. One or more solder bumps is deposited onto the first UBM region. A downstop formed on the second UBM region is wider, shallower and more rigid than any one of the solder bumps formed on the first UBM region. A second substrate is joined to the first substrate by the one or more solder bumps located on the first UBM region, and a height of the downstop limits a distance between at least one of the first substrate and the second substrate, or between an object and at least one of the first substrate and the second substrate.

Abstract: A method for forming an electronic chip assembly. A first metal plate is coupled to a first side of a substrate to form a backing plate. A first cavity is created extending through the substrate to extend at least to the first metal plate. An electronic component is bonded to the substrate such that the electronic component is located within the first cavity. A second metal plate, having a second cavity, is disposed to a second side of the substrate, and over the first cavity such that the electronic component is encased within the first and second cavities by the first and second metal plates.