Patents by Inventor David Abrahams

David Abrahams has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20070166840
    Abstract: Novel methods for reliably and reproducibly forming magnetic tunnel junctions in integrated circuits are described. In accordance with aspects of the invention, sidewall spacer features are utilized during the processing of the film stack. Advantageously, these sidewall spacer features create a tapered masking feature which helps to avoid byproduct redeposition during the etching of the MTJ film stack, thereby improving process yield. Moreover, the sidewall spacer features may be used as encapsulating layers during subsequent processing steps and as vertical contacts to higher levels of metallization.
    Type: Application
    Filed: January 18, 2006
    Publication date: July 19, 2007
    Applicant: International Business Machines Corporation
    Inventors: Solomon Assefa, Michael Gaidis, Sivananda Kanakasabapathy, John Hummel, David Abraham
  • Publication number: 20070097731
    Abstract: Apparatus and methods for optimizing a toggle window for a magnetic tunnel junction (MTJ) having a multicomponent free layer are provided. In accordance with an aspect of the invention, a MTJ comprises a free layer, a pinned layer, and a barrier layer formed between the free layer and the pinned layer. The free layer, in turn, includes a plurality of free magnetic sublayers while the pinned layer includes a plurality of pinned magnetic sublayers. Each of the pinned magnetic sublayers exerts a magnetic field on the free magnetic sublayers. To optimize the toggle window for the device, the dimensions of each of the pinned magnetic sublayers are selected to substantially equalize average magnetic fields acting on each of the free magnetic sublayers.
    Type: Application
    Filed: October 28, 2005
    Publication date: May 3, 2007
    Applicant: International Business Machines Corporation
    Inventors: David Abraham, Daniel Worledge
  • Publication number: 20070012656
    Abstract: An etching process is employed to selectively pattern the exposed magnetic film layer of a magnetic thin film structure. The magnetic structure to be etched includes at least one bottom magnetic film layer and at least one top film layer which are separated by a tunnel barrier. The etching process employs various etching steps that selectively remove various layers of the magnetic thin film structure stopping on the tunnel barrier layer.
    Type: Application
    Filed: June 8, 2005
    Publication date: January 18, 2007
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Eugene O'Sullivan, David Abraham
  • Publication number: 20060257484
    Abstract: Disclosed are substances, compositions, dosage forms and methods that comprise tramadol and substances that comprise gabapentin.
    Type: Application
    Filed: April 13, 2006
    Publication date: November 16, 2006
    Inventors: Stephen Hwang, Sandra Chaplan, Dong Yan, Patrick Wong, David Abraham
  • Patent number: 7043464
    Abstract: A computer-implemented method and system for recommending electronic component connectivity configurations and marketing information to users of certain electronic equipment based upon information received from the user. The method includes providing a user interface display containing data representing a group of predetermined user-selectable electronic components, receiving data representing a user-selected subset of electronic components from the group of predetermined user-selectable electronic components, retrieving from a database attributes associated with each component of the subset of electronic components, comparing the subset of electronic components with the associated attributes to determine an appropriate component configuration, and presenting data representing the electronic component configuration to the user.
    Type: Grant
    Filed: May 28, 2003
    Date of Patent: May 9, 2006
    Assignees: Sony Corporation, Sony Electronics, Inc.
    Inventor: Marc David Abrahams
  • Publication number: 20060039184
    Abstract: A method, information processing system and computer readable medium for transferring data between applications on a computer is disclosed. The method includes selecting data from a first application and selecting a copy-to command for copying the data selected from the first application. The method further includes selecting a second application as a destination for the data selected. The method further includes selecting a location in the second application for inserting the data selected.
    Type: Application
    Filed: August 19, 2004
    Publication date: February 23, 2006
    Inventors: David Abraham, Yu Lu
  • Patent number: 6985897
    Abstract: A virtual personalized animated product selection and customer information gathering method and system includes providing a product presentation to a user by retrieving personalization data for the user from a database, assembling display data that is configured to render a three-dimensional display area on a video display with the display area including images of one or more products that are selected based on the personalization data, sending the display data through a computer network for display on a client computer video display, receiving a communication from the client computer through the computer network with the communication resulting from interactions with the display area, and updating the personalization data for the particular user in the database based on the communication.
    Type: Grant
    Filed: July 18, 2000
    Date of Patent: January 10, 2006
    Assignees: Sony Corporation, Sony Electronics Inc.
    Inventor: Marc David Abrahams
  • Publication number: 20060002179
    Abstract: A method for determining a desired anisotropy axis angle for a magnetic random access memory (MRAM) device includes selecting a plurality of initial values for the anisotropy axis angle and determining, for each selected initial value, a minimum thickness for at least one ferromagnetic layer of the MRAM device. The minimum thickness corresponds to a predefined activation energy of an individual cell within the MRAM device. For each selected value, a minimum applied magnetic field value in a wordline direction and a bitline direction of the MRAM device is also determined so as maintain the predefined activation energy. For each selected value, an applied power per bit value is calculated, wherein the desired anisotropy axis angle is the selected anisotropy axis angle corresponding to a minimum power per bit value.
    Type: Application
    Filed: June 30, 2004
    Publication date: January 5, 2006
    Applicant: INTERNATIOANL BUSINESS MACHAINES CORPORATION
    Inventors: Philip Trouilloud, David Abraham, John DeBrosse, Daniel Worledge
  • Publication number: 20050274997
    Abstract: In an MRAM cell, the writing current is encased in a low-reluctance material that is treated in one of several ways to render the material closest to the storage element ineffective to carry magnetic flux, thereby establishing a horseshoe-shaped cross section that focuses the flux toward the storage element.
    Type: Application
    Filed: June 15, 2004
    Publication date: December 15, 2005
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Michael Gaidis, Phillip Trouilloud, Sivananda Kanakasabapathy, David Abraham
  • Publication number: 20050277206
    Abstract: A method of patterning a magnetic tunnel junction (MTJ) stack is provided. According to such method, an MTJ stack is formed having a free layer, a pinned layer and a tunnel barrier layer disposed between the free layer and the pinned layer. A first area of the MTJ stack is masked while the free layer of the MTJ is exposed in a second area. The free layer is then rendered electrically and magnetically inactive in the second area.
    Type: Application
    Filed: June 11, 2004
    Publication date: December 15, 2005
    Applicants: International Business Machines Corporation, Infineon Technologies North America Corp.
    Inventors: Michael Gaidis, David Abraham, Stephen Brown, Arunava Gupta, Chanro Park, Wolfgang Raberg
  • Publication number: 20050254180
    Abstract: A a magnetic random access memory (MRAM) device includes a cap layer formed over a magnetic tunnel junction (MTJ) stack layer, an etch stop layer formed over the first cap layer, and a hardmask layer formed over the etch stop layer. The etch stop layer is selected from a material such that an etch chemistry used for removing the hardmask layer has selectivity against etching the etch stop layer material.
    Type: Application
    Filed: May 14, 2004
    Publication date: November 17, 2005
    Applicants: INTERNATIONAL BUSINESS MACHINES CORPORATION, INFINEON TECHNOLOGIES NORTH AMERICA CORP.
    Inventors: Sivananda Kanakasabapathy, David Abraham, Ulrich Klostermann
  • Publication number: 20050203751
    Abstract: New techniques and systems may be implemented to improve error correction in speech recognition. These new techniques and systems may be implemented to correct errors in speech recognition systems may be used in a standard desktop environment, in a mobile environment, or in any other type of environment that can receive and/or present recognized speech.
    Type: Application
    Filed: May 11, 2005
    Publication date: September 15, 2005
    Inventors: Daniell Stevens, Robert Roth, Joel Gould, Michael Newman, Dean Sturtevant, Charles Ingold, David Abrahams, Allan Gold
  • Patent number: 6944401
    Abstract: A method of controlling a network (115) through which information is transmitted in channels (?1, ?2, . . . ?n) among nodes includes: (a) providing at a node a device (108) for removing from the network (115) and replacing on the network (115) a selected one (?i) of the channels, the device (108) including a first input port from the network (115) to the node and a first output port from the node to the network (115); (b) taking a measure of the strength (P?iDROP) of the received channel (?iDROP); (c) regenerating the channel (?iIN); (d) adjusting (114) the strength (P?iADD) of the regenerated channel (?iIN) to approximate the strengths of the remaining channels ((?1, ?2, . . . ?n)-?i; and (e) combining the regenerated and strength-adjusted channel (?iADD) with the remaining channels ((?1, ?2, . . . ?n)-?i) at the output port.
    Type: Grant
    Filed: April 24, 2001
    Date of Patent: September 13, 2005
    Assignee: Lucent Technologies Inc.
    Inventors: Albert Olier, Hanni Inbar, Oded Mor, David Abraham
  • Patent number: 6944773
    Abstract: A method of on-line authentication includes having a user present one or more fingerprints for authentication during an on-line transaction, such as an Internet transaction. The user provides the fingerprints by placing the appropriate finger on the print pad of the fingerprint reader associated with the client computer that the user is using. The method includes receiving through the computer network a communication indicating that authentication is needed, obtaining a first number that indicates how many fingerprints will be requested for authentication, randomly selecting which fingerprints will be requested, sending through the computer network one or more requests for entry of the randomly selected fingerprints, receiving fingerprint data through the computer network in response to the one or more requests for entry of the randomly selected fingerprints, and comparing the received fingerprint data to fingerprint data stored in a database.
    Type: Grant
    Filed: May 19, 2000
    Date of Patent: September 13, 2005
    Assignees: Sony Corporation, Sony Electronics Inc.
    Inventor: Marc David Abrahams
  • Publication number: 20050185458
    Abstract: Techniques for attaining high performance magnetic memory devices are provided. In one aspect, a magnetic memory device comprising one or more free magnetic layers is provided. The one or more free magnetic layers comprise a low magnetization material adapted to have a saturation magnetization of less than or equal to about 600 electromagnetic units per cubic centimeter. The device may be configured such that a ratio of mean switching field associated with an array of non-interacting magnetic memory devices and a standard deviation of the switching field is greater than or equal to about 20. The magnetic memory device may comprise a magnetic random access memory (MRAM) device. A method of producing a magnetic memory device is also provided.
    Type: Application
    Filed: April 19, 2005
    Publication date: August 25, 2005
    Applicant: International Business Machines Corporation
    Inventor: David Abraham
  • Publication number: 20050151552
    Abstract: An improved method and apparatus for determining a property based upon at least two measurements uses simultaneous probe signals having two different frequencies. The probe signals are produced simultaneously such that the position of the probes is identical when the probe signals are produced. The responses to the two probe signals have frequencies that correspond to the probe signals. The individual responses are isolated from each other based upon their differing frequencies by frequency lock-in circuits. By performing the measurements simultaneously, positional errors that are introduced due to small changes that occur in the position of the probes if the measurements are taken sequentially are eliminated.
    Type: Application
    Filed: January 8, 2004
    Publication date: July 14, 2005
    Inventors: David Abraham, Daniel Worledge
  • Patent number: 6912498
    Abstract: Correcting incorrect text associated with recognition errors in computer-implemented speech recognition includes receiving a selection of a word from a recognized utterance. The selection indicates a bound of a portion of the recognized utterance to be corrected. A first recognition correction is produced based on a comparison between a first alternative transcript and the recognized utterance. A second recognition correction is produced based on a comparison between a second alternative transcript and the recognized utterance. The duration of the first recognition correction differs from the duration of the second recognition correction. A portion of the recognition result that is replaced with one of the first recognition correction and the second recognition correction. includes at one bound a word indicated by the selection and extends for the duration of the one of the first recognition correction and the second recognition correction with which the portion is replaced.
    Type: Grant
    Filed: May 2, 2001
    Date of Patent: June 28, 2005
    Assignee: ScanSoft, Inc.
    Inventors: Daniell Stevens, Robert Roth, Joel M. Gould, Michael J. Newman, Dean Sturtevant, Charles E. Ingold, David Abrahams, Allan Gold
  • Publication number: 20050127418
    Abstract: Techniques for attaining high performance matic, memory devices are provided. In one aspect, a magnetic memory device comprising one or more free magnetic layers is provided. The one or more free magnetic layers comprise a low magnetization material adapted to have a saturation magnetization of less than or equal to about 600 electromagnetic units per cubic centimeter. The device may be configured such that a ratio of mean switching field associated with an array of non-interacting magnetic memory devices and a standard deviation of the switching field is greater than or equal to about 20. The magnetic memory device may comprise a magnetic random access memory (MRAM) device. A method of producing a magnetic memory device is also provided.
    Type: Application
    Filed: December 11, 2003
    Publication date: June 16, 2005
    Applicant: International Business Machines Corporation
    Inventor: David Abraham
  • Publication number: 20050102581
    Abstract: A method and apparatus for minimizing errors that may occur when writing information to a magnetic memory cell array with an operating write current due to changes in the local magnetic fields and. A test write current is sent to a reference memory cell and the effect of the test current on the orientation of the magnetization in the reference cell is monitored. The write current is then modified to compensate for any changes in the optimum operating point that have occurred. Arrays of reference magnetic memory cells having varying properties may be used to more accurately characterize any changes that have occurred in the operating environment. A phase difference between a time varying current used to drive the reference cell and the corresponding variations in the orientation of the magnetization in the reference cell may also be used to further characterize changes in the operating environment.
    Type: Application
    Filed: October 28, 2003
    Publication date: May 12, 2005
    Inventors: David Abraham, Philip Trouilloud
  • Publication number: 20050088173
    Abstract: The present invention is a method an apparatus for tunable magnetic force interaction for a magnetic force microscope. In one embodiment, the magnetic moment of a probe tip is oscillated using a time-varying heat source. The magnetic field interaction between the probe tip and a sample is thus modulated, substantially separating the magnetic force components of a measurement from non-magnetic components at any time and position over the sample. This simplifies the measurement process and also provides measurements of sample properties that are more purely magnetic than measurements achieved by existing magnetic force microscopy techniques.
    Type: Application
    Filed: October 24, 2003
    Publication date: April 28, 2005
    Inventor: David Abraham