Patents by Inventor David Aitan Soltz

David Aitan Soltz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10804843
    Abstract: Methods of testing a semiconductor, and semiconductor testing apparatus, are described. In an example, a method for testing a semiconductor can include applying light on the semiconductor to induce photonic degradation. The method can also include receiving a photoluminescence measurement induced from the applied light from the semiconductor and monitoring the photonic degradation of the semiconductor from the photoluminescence measurement.
    Type: Grant
    Filed: March 11, 2019
    Date of Patent: October 13, 2020
    Assignee: SunPower Corporation
    Inventors: Xiuwen Tu, David Aitan Soltz, Michael C. Johnson, Seung Bum Rim, Taiqing Qiu, Yu-Chen Shen, Kieran Mark Tracy
  • Patent number: 10476432
    Abstract: High throughput systems for photovoltaic UV degradation testing of solar cells, and methods of testing for UV degradation of solar cell during manufacture, are described herein. In an example, a high throughput solar cell testing apparatus includes a plurality of real time ultra-violet (RTUV) testing modules. Each of the RTUV testing modules includes an ultra-violet (UV) light source, an optics assembly for focusing light from the UV light source on a sample area, and a detector for receiving photoluminescence energy from the sample area. The high throughput solar cell testing apparatus also includes an acquisition and control assembly coupled to the plurality of RTUV testing modules.
    Type: Grant
    Filed: December 30, 2016
    Date of Patent: November 12, 2019
    Assignee: SunPower Corporation
    Inventors: David Aitan Soltz, Yoann Buratti, Xiuwen Tu, Ryan Manuel Lacerda, Taiqing Qiu
  • Publication number: 20190273467
    Abstract: Methods of testing a semiconductor, and semiconductor testing apparatus, are described. In an example, a method for testing a semiconductor can include applying light on the semiconductor to induce photonic degradation. The method can also include receiving a photoluminescence measurement induced from the applied light from the semiconductor and monitoring the photonic degradation of the semiconductor from the photoluminescence measurement.
    Type: Application
    Filed: March 11, 2019
    Publication date: September 5, 2019
    Inventors: Xiuwen Tu, David Aitan Soltz, Michael C. Johnson, Seung Bum Rim, Taiqing Qiu, Yu-Chen Shen, Kieran Mark Tracy
  • Patent number: 10230329
    Abstract: Methods of testing a semiconductor, and semiconductor testing apparatus, are described. In an example, a method for testing a semiconductor can include applying light on the semiconductor to induce photonic degradation. The method can also include receiving a photoluminescence measurement induced from the applied light from the semiconductor and monitoring the photonic degradation of the semiconductor from the photoluminescence measurement.
    Type: Grant
    Filed: February 6, 2017
    Date of Patent: March 12, 2019
    Assignee: SunPower Corporation
    Inventors: Xiuwen Tu, David Aitan Soltz, Michael C. Johnson, Seung Bum Rim, Taiqing Qiu, Yu-Chen Shen, Kieran Mark Tracy
  • Publication number: 20180041165
    Abstract: High throughput systems for photovoltaic UV degradation testing of solar cells, and methods of testing for UV degradation of solar cell during manufacture, are described herein. In an example, a high throughput solar cell testing apparatus includes a plurality of real time ultra-violet (RTUV) testing modules. Each of the RTUV testing modules includes an ultra-violet (UV) light source, an optics assembly for focusing light from the UV light source on a sample area, and a detector for receiving photoluminescence energy from the sample area. The high throughput solar cell testing apparatus also includes an acquisition and control assembly coupled to the plurality of RTUV testing modules.
    Type: Application
    Filed: December 30, 2016
    Publication date: February 8, 2018
    Inventors: David Aitan Soltz, Yoann Buratti, Xiuwen Tu, Ryan Manuel Lacerda, Taiqing Qiu
  • Publication number: 20170278990
    Abstract: The present disclosure provides improved approaches for marking and individual tracking of solar cells. These approaches can be used to identify key manufacturing process steps requiring optimization and/or significant factors extending solar cell lifetime. The approaches described herein for marking and individual tracking of solar cells avoid or greatly minimize any negative impact on solar cell performance while improving quality control of solar cells across multiple manufacturing steps and throughout the entire solar cell lifecycle. Embodiments described herein include a solar cell comprising a substrate having a front side and a back side. The substrate comprises at least one diffusion region of a first polarity. A first set of conductive conduits in the first set is electrically coupled to at least one active diffusion region of a first polarity. The solar cell further comprises a marking above an inactive region of the substrate.
    Type: Application
    Filed: March 25, 2016
    Publication date: September 28, 2017
    Inventors: David Aitan Soltz, Seung Bum Rim
  • Publication number: 20170149383
    Abstract: Methods of testing a semiconductor, and semiconductor testing apparatus, are described. In an example, a method for testing a semiconductor can include applying light on the semiconductor to induce photonic degradation. The method can also include receiving a photoluminescence measurement induced from the applied light from the semiconductor and monitoring the photonic degradation of the semiconductor from the photoluminescence measurement.
    Type: Application
    Filed: February 6, 2017
    Publication date: May 25, 2017
    Inventors: Xiuwen Tu, David Aitan Soltz, Michael C. Johnson, Seung Bum Rim, Taiqing Qiu, Yu-Chen Shen, Kieran Mark Tracy
  • Patent number: 9564854
    Abstract: Methods of testing a semiconductor, and semiconductor testing apparatus, are described. In an example, a method for testing a semiconductor can include applying light on the semiconductor to induce photonic degradation. The method can also include receiving a photoluminescence measurement induced from the applied light from the semiconductor and monitoring the photonic degradation of the semiconductor from the photoluminescence measurement.
    Type: Grant
    Filed: May 6, 2015
    Date of Patent: February 7, 2017
    Assignee: SunPower Corporation
    Inventors: Xiuwen Tu, David Aitan Soltz, Michael C. Johnson, Seung Bum Rim, Taiqing Qiu, Yu-Chen Shen, Kieran Mark Tracy
  • Publication number: 20160329864
    Abstract: Methods of testing a semiconductor, and semiconductor testing apparatus, are described. In an example, a method for testing a semiconductor can include applying light on the semiconductor to induce photonic degradation. The method can also include receiving a photoluminescence measurement induced from the applied light from the semiconductor and monitoring the photonic degradation of the semiconductor from the photoluminescence measurement.
    Type: Application
    Filed: May 6, 2015
    Publication date: November 10, 2016
    Inventors: Xiuwen Tu, David Aitan Soltz, Michael C. Johnson, Seung Bum Rim, Taiqing Qiu, Yu-Chen Shen, Kieran Mark Tracy
  • Publication number: 20150318822
    Abstract: A solar cell testing apparatus can include a first electrical probe configured to receive a first voltage at a first location of a solar cell. The solar cell testing apparatus can also include a second electrical probe configured to receive a second voltage at a second location of the solar cell, where the second location is of the same polarity as the first location.
    Type: Application
    Filed: June 30, 2014
    Publication date: November 5, 2015
    Inventors: Xiuwen Tu, David D. Smith, David Aitan Soltz
  • Patent number: 7049590
    Abstract: A method of reducing atom ejection from a sample during electron beam bombardment. An electron beam is directed through a low pressure environment toward a surface of the sample. The electron beam thereby impinges on the sample at a target location, and thereby causes characteristic x-ray emission from the target location of the sample. A capping precursor is introduced into the low pressure environment, where the capping precursor forms a capping layer on the surface of the sample at the target location when contacted by the electron beam. The capping layer thereby reduces atom ejection from the sample at the target location, while not appreciably impeding and confounding the characteristic x-ray emission from the target location of the sample.
    Type: Grant
    Filed: October 28, 2004
    Date of Patent: May 23, 2006
    Assignee: KLA-Tencor Technologies Corporation
    Inventor: David Aitan Soltz