Abstract: Aspects of this disclosure relate to a bulk acoustic wave that includes a temperature compensation layer in thermal communication with a piezoelectric layer. The temperature compensation layer includes a silicon oxide composite that includes silicon oxide and a stiffening agent. The temperature compensation layer can have a positive temperature coefficient of variation. Related filters, multiplexers, radio frequency modules, radio frequency systems, wireless communication devices, and methods are disclosed.

Abstract: An acoustic wave system includes a multi-layer piezoelectric substrate including a support substrate, a piezoelectric layer, and an intermediate structure between the support substrate and the piezoelectric layer. The intermediate structure can include a first dielectric material in a first region, and the first dielectric material and a second dielectric material can be included in a second region. A first resonator is in the first region, and a second resonator is in the second region.

Abstract: An acoustic wave device is provided comprising a substrate and at least one resonator structure of a first type and at least one resonator structure of a second type mounted on the substrate. The resonator structures of the first type are configured to operate as capacitors and have a first thickness, causing the resonator structures to have a first passband frequency range. The resonator structures of the second type have a second thickness that is different from the first thickness, causing the resonator structures to have a second passband frequency range. A method for forming such an acoustic wave device is also provided. A die comprising such an acoustic wave device, a filter comprising such an acoustic wave device, a radio-frequency module comprising such an acoustic wave device, and a wireless mobile device comprising such an acoustic wave device are also provided.

Abstract: A bulk acoustic wave device configured to excite a second overtone mode as a main mode of operation. A piezoelectric layer is sandwiched between a bottom surface of a top electrode and a top surface of a bottom electrode. A temperature compensation layer is formed on the top surface of the top electrode.

Abstract: Aspects of this disclosure relate to a bulk acoustic wave component that includes a bulk acoustic wave resonator, a capacitor, and a circuit element electrically connected to the bulk acoustic wave resonator. The capacitor includes an electrode buried in dielectric material. The circuit element includes conductive material in the dielectric layer. Related filters, multiplexers, radio frequency modules, radio frequency systems, wireless communication devices, and methods are disclosed.

Abstract: Aspects and embodiments disclosed herein include a bulk acoustic wave (BAW) device comprising a first electrode and a second electrode, at least one of the first electrode and the second electrode including at least one of a binary intermetallic compound, a metal nitride, a metal carbide, a metal carbonitride, a metal boride, a MXene, a MAX phase, or a MAB phase, and a piezoelectric material layer positioned between the first electrode and the second electrode.

Abstract: Aspects and embodiments disclosed herein include a bulk acoustic wave (BAW) device comprising a first electrode, a second electrode, a stack of at least two first piezoelectric material layers of the same polarity type sandwiched between the first electrode and the second electrode, and a first interposer sandwiched between the at least two first piezoelectric material layers and including at least one intermediate electrode, the BAW device being configured to excite an even overtone mode as the main mode of operation.

Abstract: An integrated bulk acoustic wave resonator-capacitor comprises a membrane including a piezoelectric film, an upper electrode disposed on a top surface of the piezoelectric film, and a lower electrode disposed on a lower surface of the piezoelectric film, a resonator region of the membrane defining a main active domain in which a main acoustic wave is generated during operation, and a capacitor region of the membrane surrounding the resonator region, the capacitor region including a layer of conductive material disposed on the upper electrode, an inner capacitor raised frame defined on an inner peripheral region of the layer of conductive material, and an outer capacitor raised frame defined on an outer peripheral region of the layer of conductive material.

Abstract: Aspects of this disclosure relate to an acoustic wave device with a piezoelectric layer that includes a wurtzite structure. The wurtzite structure can include a group 2 element and have a high acoustic velocity. For example, the wurtzite structure can include a carbide and the group 2 element can be carbon of the carbide. The high acoustic velocity can be over 10,000 meters per second. Related piezoelectric layers, acoustic wave filters, radio frequency modules, wireless communication devices, and methods are disclosed.

Abstract: Aspects and embodiments disclosed herein include a bulk acoustic wave resonator including a material layer stack located in a central active region of the bulk acoustic wave resonator, the material layer stack comprising a bottom electrode, a first piezoelectric material layer disposed on an upper surface of the bottom electrode, a second piezoelectric material layer disposed on the first piezoelectric material layer, a polarity of the second piezoelectric material layer being opposite a polarity of the first piezoelectric material layer, an interposer layer disposed between the first piezoelectric material layer and the second piezoelectric material layer, and a top electrode having a lower surface disposed on an upper surface of the upper piezoelectric material layer.

Abstract: Aspects of this disclosure relate to an acoustic wave device with a piezoelectric layer that includes a wurtzite structure. The wurtzite structure can include aluminum nitride and silicon carbide. Related piezoelectric layers, acoustic wave filters, radio frequency modules, wireless communication devices, and methods are disclosed.

Abstract: Aspects and embodiments disclosed herein include a bulk acoustic wave resonator comprising a layer of piezoelectric material and one of a top electrode disposed on top of the layer of piezoelectric material or a bottom electrode disposed on a bottom of the layer of piezoelectric material, the one of the top electrode or the bottom electrode including a Bragg pair having alternating layers of a first metal and a second metal.

Abstract: Aspects of this disclosure relate to a bulk acoustic wave structure that includes a bulk acoustic wave resonator and a circuit element electrically connected to the bulk acoustic wave resonator. The circuit element can include conductive material buried in a dielectric layer. The dielectric layer can extend under an acoustic reflector of the bulk acoustic wave resonator. In certain embodiments, the circuit element can be an inductor, a tuning stub, or a fuse element. Related filters, multiplexers, radio frequency modules, radio frequency systems, wireless communication devices, and methods are disclosed.

Abstract: Aspects of this disclosure relate to a filter that includes a bulk acoustic wave resonator and a capacitor in parallel with the bulk acoustic wave resonator. The bulk acoustic wave resonator can include a first electrode, a second electrode, a piezoelectric layer positioned between the first electrode and the second electrode, and an acoustic reflector positioned between the first electrode and a substrate. The capacitor can include an electrode buried in a dielectric layer that is over the substrate. Related multiplexers, radio frequency modules, radio frequency systems, wireless communication devices, and methods are disclosed.

Abstract: Aspects of this disclosure relate to a bulk acoustic wave structure that includes a bulk acoustic wave resonator and a metal-insulator-metal capacitor. The bulk acoustic wave resonator can include an acoustic reflector, a top electrode, a bottom electrode, and a piezoelectric layer including at least a portion over the acoustic reflector and between the top electrode and the bottom electrode. The metal-insulator-metal capacitor can be electrically connected to the bulk acoustic wave resonator. The metal-insulator-metal capacitor can include material of a dielectric layer under the acoustic reflector and an electrode buried in the dielectric layer. Related filters, multiplexers, radio frequency modules, radio frequency systems, wireless communication devices, and methods are disclosed.

Abstract: Aspects of this disclosure relate to a bulk acoustic wave component that includes a bulk acoustic wave resonator, a capacitor, and a circuit element electrically connected to the bulk acoustic wave resonator. The capacitor includes an electrode buried in dielectric material. The circuit element includes conductive material in the dielectric layer. Related filters, multiplexers, radio frequency modules, radio frequency systems, wireless communication devices, and methods are disclosed.

Abstract: Disclosed herein is a bulk acoustic wave filter comprising a number of acoustic wave resonators, each acoustic wave resonator being encompassed by a polygon including vertices of a mesh optimized to provide a reduced filter size of the bulk acoustic wave filter integrated on a die.

Abstract: Aspects and embodiments disclosed herein include filter module comprising an input port to receive a radio frequency signal, a first output port connected to an antenna, a filter disposed along a fundamental signal path from the input port to the first output port, and a second output port to output a harmonic signal generated in response to the RF signal, the second output port being electrically connected to a node on the fundamental signal path via a harmonic signal path including a resonating structure configured to improve a linearity response of the filter module, the resonating structure including resonators electrically connected to each other in anti-series or anti-parallel and disposed on a piezoelectric film, a polarity direction of a first half of the resonators opposite to a polarity direction of a second half of the resonators when a voltage is applied across the piezoelectric film.

Abstract: Aspects of this disclosure relate to an acoustic wave device with a piezoelectric layer that includes a wurtzite structure. The wurtzite structure can include aluminum nitride and silicon carbide. Related piezoelectric layers, acoustic wave filters, radio frequency modules, wireless communication devices, and methods are disclosed.

Abstract: Aspects of this disclosure relate to an acoustic wave device with a temperature compensation layer that includes silicon oxycarbide. The temperature compensation layer can be in physical contact with at least a portion of a piezoelectric layer of the acoustic wave device. The acoustic wave device can be a surface acoustic wave device in certain applications. The acoustic wave device can be a bulk acoustic wave device in some other applications. Related acoustic wave filters, radio frequency modules, wireless communication devices, and methods are disclosed.