Abstract: A method includes obtaining a semiconductor wafer having an orientation in a plane; depositing one or more masks to a semiconductor wafer, wherein each mask is configured to cover a portion of the semiconductor wafer, and wherein each mask includes a perimeter having multiple sides that are substantially aligned along a preferred crystal direction relative to the orientation that provides reduced or enhanced growth enhancement at edges of the substantially aligned sides; and performing Selective Area Epitaxy (SAE) growth on a surface of the semiconductor wafer, wherein the one or more masks inhibit the SAE growth over the associated portion.