Abstract: A mixed-mode crosstalk canceller is disclosed that performs crosstalk cancellation in the continuous time domain. The disclosed mixed-mode crosstalk canceller processes the pulse amplitude modulated (PAM) digital signal to be transmitted as well as the received signal to compensate for the crosstalk between the transmit and receive signals. The output of the crosstalk canceller is subtracted from the received signal in the continuous time domain. Thus, the transmit symbol clock and the receive symbol clock can be asynchronous. The tap weights for the crosstalk cancellation are illustratively obtained using a modified version of the least mean square (LMS) algorithm for discrete time signals. The modified least mean square (LMS) algorithm is applied for continuous time signals that are derived from different clocks.

Abstract: An image sensor circuit which employs a photodiode in conjunction with a charge transfer mechanism. By employing the photodiode, at least a portion of the light sensed does not pass through a layer of polysilicon, and so is not prevented from reaching the sensing area by the polysilicon. The image sensor circuit of the invention is made up of device structures readily available in standard CMOS process technologies Advantageously, image sensors embodying the invention show substantially improved quantum efficiency for short wavelength light over the prior art sensors. In addition, image sensors embodying the invention display improved dark current uniformity, thus improving yield.

Abstract: A single-polysilicon active pixel, methods for operating and making same, and an imaging device employing same are disclosed. The single-polysilicon active pixel comprises a photo site located on a substrate for generating and storing charge carriers, the charge carriers being generated from photonic energy incident upon the photo site and semiconductor substrate, a photo gate, a transfer transistor and output and reset electronics. The gate of the transfer transistor and the photo gate are defined in a single layer of polysilicon disposed on the semiconductor substrate. The source of transfer transistor is a doped region of substrate, referred to as a coupling diffusion, which provides the electrical coupling between the photo gate and the transfer transistor. The coupling diffusion allows for the transfer of a signal stored in a photo site under the photo gate to the output electronics for processing. A plurality of such single-polysilicon active pixels can be arranged to form an imaging system.

Abstract: An active pixel image sensor includes an array of pixels arranged in a first group and a second group. The first group may constitute a row and the second group may constitute a column, for example. A first common conductor is coupled to the pixels in the first group for conducting control signals. A second common conductor is coupled to the pixels in the second group for selectively transmitting signals to processing electronics. Each of the pixels includes a plurality of sensing elements that are each configured for capturing a portion of energy from an object to be imaged. At least one of the sensing elements is of a type distinct from another of the sensing elements. For example, one of the sensing elements may be a photogate and another may be a photodiode. An amplifying arrangement is provided for receiving signals from selected ones of the plurality of sensing elements and for selectively providing output signals to the second common conductor.