Patents by Inventor David Anthony Muller

David Anthony Muller has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Silicon semiconductor devices with &dgr;-doped layers
    Patent number: 6403454
    Abstract: We have discovered that, contrary to conventional wisdom about forming DP defects, electrical saturation in highly doped 2D layers of Si does not occur. In accordance with one aspect of our invention, free-carrier concentrations in excess of about 7×1020 cm−3 can be attained in single crystal Si layers &dgr;-doped with a Group V element. In one embodiment, free-carrier concentrations in excess of about 2×1021 cm−3 are realized in single crystal Si that is &dgr;-doped with Sb. In another embodiment, the &dgr;-doped layer is formed as an integral part of an FET.
    Type: Grant
    Filed: October 29, 1999
    Date of Patent: June 11, 2002
    Assignee: Agere Systems Guardian Corp.
    Inventors: Paul H. Citrin, Hans-Joachim Ludwig Gossmann, David Anthony Muller