Abstract: It has been found that in sol-gel processes utilizing TMAH, it is possible to treat a trimethylamine (TRIMA)-containing solution with hydrogen peroxide to form trimethylamine oxide--(CH.sub.3).sub.3 N.sup.+ --O.sup.- (TRIMAO), a water soluble compound which is less volatile and less odorous than TRIMA, and which is capable of being sent to a standard wastewater treatment plant. The hydrogen peroxide is generally added to the TRIMA-containing solution in a H.sub.2 O.sub.2 :TRIMA ratio of at least 3:1, advantageously at least 10:1. Because of the resultant TRIMAO solution's ability to be sent to a standard wastewater treatment facility, improved productivity and lowered expense of the overall fiber fabrication process are obtained. The invention is also suitable for treatment of triethylamine.

Abstract: A process for enhancing the performance of resist polymers in lithographic processes for device fabrication is disclosed. The resist polymers contain acid labile functional groups. When these functional groups are removed and replaced by hydrogen, the polymer becomes more soluble in the aqueous base developer solutions used in lithographic processes. A portion of the acid-labile functional groups are cleaved from the polymer to obtain a resist polymer with increased sensitivity, improved adhesion, and reduced film shrinkage during post-exposure bake. The acid labile functional groups are cleaved by dissolving the polymer in a suitable solvent and subjecting the mixture to increased temperature until the desired number of acid labile functional groups are cleaved from the polymer. The polymer is then recovered from the mixture and employed as a resist in a lithographic process for device fabrication.

Abstract: The present invention is directed to a process for device or mask fabrication. In the process, an energy sensitive resist material that is the combination of a matrix polymer and a modifier polymer is formed onto a substrate. The modifier polymer and matrix polymer are phase compatible. In this regard the modifier polymer has a weight average molecular weight of about 5,000 to about 500,000 g/mol, and at least some of the polymer chains are terminated by a halogen moiety. The resist material is patternwise exposed to radiation, thereby introducing a latent image of the pattern into the resist material. The energy depolymerizes the modifier polymer. The modifier polymer is substantially less soluble in a developer solution used to develop the pattern introduced into the resist than is the matrix polymer. Therefore, if the resist material is positive acting, the resist material that is exposed to radiation is substantially more soluble in developer solution than the unexposed resist material.