Abstract: A light emitting diode (LED) device may include an n-type layer formed on a transparent substrate. A photoluminescent (PL) in the n-type layer quantum well (QW) and an electroluminescent (EL) QW may be formed on the n-type layer. The PL QW and the EL QW may be separated from one another by a portion of the n-type layer. A p-type layer may be formed on the EL QW. Trenches may be formed extending into the n-type layer, the trenches defining an emitting area. A passivation material may be formed on sidewalls of the trenches and n-type contacts may be formed therein. A p-type contact may be formed on an upper surface of the p-type layer. A dichroic mirror may be formed on at least a lower surface of the transparent substrate.

Abstract: A light emitting diode (LED) device may include an n-type layer formed on a transparent substrate. A photoluminescent (PL) in the n-type layer quantum well (QW) and an electroluminescent (EL) QW may be formed on the n-type layer. The PL QW and the EL QW may be separated from one another by a portion of the n-type layer. A p-type layer may be formed on the EL QW. Trenches may be formed extending into the n-type layer, the trenches defining an emitting area. A passivation material may be formed on sidewalls of the trenches and n-type contacts may be formed therein. A p-type contact may be formed on an upper surface of the p-type layer. A dichroic mirror may be formed on at least a lower surface of the transparent substrate.

Abstract: Systems and methods are provided herein describe a global safety system for workers in hazardous locations such as electrical Class 1/Division 1 locations. In at least one example, a user will carry a user device that is approved for the hazardous electrical locations. This device will monitor for safety-triggering events such as a lack of user movement, a press of an emergency button, or any other indication of an emergency. Once a safety-triggering event is detected, the user device will transmit an alert to a user station outside of the hazardous electrical location. In turn, the user station will transmit an alert to a remote station regarding the status of the user device.

Abstract: Systems, software, and methods for improved monitoring and identification systems for items and units to be serviced and reported, such as seal tags and other information from items or units to be serviced.

Abstract: A personal identification system for using a personal identification number (PIN) to provide personalized information on a user to a non-user is provided. In one embodiment of the present invention, a host computer is configured to communicate with at least a user computer, a non-user computer, and a verification computer, and to allow a user to create a user account, verify the user's identity, request background information on the user, request at least one PIN, and link a PIN with a verification type. The host computer may further be configured to communicate with the verification computer to acquire personalized data on the user, and to communicate with the non-user computer to provide personalized information on the user in response to entry of a PIN, where the type of personalized information provided is based on the verification type linked to the PIN.

Abstract: A curing assembly for curing of inks and the like comprises at least one array of UV LEDs 18. A reflector 4 with an elongate reflective surface 14 partly surrounds the array 18 and has an opening for emission of radiation towards a substrate. A lens 24 is positioned between the array 18 and the opening.

Abstract: Disclosed is a method to determine whether a pipeline has been cut, the method including (a) transmitting an electromagnetic signal through the pipeline; (b) monitoring any reflected signal(s); and (c) interpreting the reflected signal to determine whether the pipeline has been cut.

Abstract: Systems and methods are provided herein describe a global safety system for workers in hazardous locations such as electrical Class 1/Division 1 locations. In at least one example, a user will carry a user device that is approved for the hazardous electrical locations. This device will monitor for safety-triggering events such as a lack of user movement, a press of an emergency button, or any other indication of an emergency. Once a safety-triggering event is detected, the user device will transmit an alert to a user station outside of the hazardous electrical location. In turn, the user station will transmit an alert to a remote station regarding the status of the user device.

Abstract: Methods and systems for providing incentives for safe driving include collecting data from a vehicle monitoring system, analyzing the data from the vehicle monitoring system to create a driver report with an overall score, delivering the driver report to a target driver, and rewarding the target driver based on at least the overall score.

Abstract: Systems, software, and methods for improved monitoring and identification systems for items and units to be serviced and reported, such as seal tags and other information from items or units to be serviced.

Abstract: Provided is a detecting element that detects a parameter for a predetermined gas or liquid in a surrounding atmosphere by being excited by excitation light and generating light corresponding to the surrounding atmosphere, the detecting element including: a substrate; and nanoscale crystal structures formed on the substrate and constituted by a compound semiconductor light emitting element having a heterostructure well layer, wherein when the nanoscale crystal structures adsorb atoms or molecules of the predetermined gas or liquid, there is distortion of a band of a structure with a smaller bandgap width in the well layer, this distortion brings about a change in transition energy, and this change brings about a change in at least one of an intensity and a wavelength of light generated by the well layer, thereby indicating the parameter for the gas or the liquid.

Abstract: The present invention provides an inexpensive substrate which can realize m-plane growth of a crystal by vapor phase growth. In a sapphire substrate, an off-angle plane slanted from an m-plane by a predetermined very small angle is prepared as a growth surface, which is a template of the crystal, at the time of growing a crystal of GaN or the like, by a polishing process to prepare a stepwise substrate comprising steps and terraces. According to the above-described configuration, even if an inexpensive sapphire substrate, which normally does not form an m-plane (nonpolar plane) GaN film, is used as a substrate for crystal growth, the following advantages can be attained.

Abstract: A compound semiconductor light-emitting element includes: a substrate; a first electrode provided on one face of the substrate; a plurality of nanoscale columnar crystalline structures in which an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer are stacked in order on the other face of the substrate; a second electrode connected to top portions of the plurality of columnar crystalline structures; and a foundation layer, provided on the side of the other face, in a first region being a partial region of the substrate; wherein a level difference is provided, on the other face, between the first region and a second region being at least part of a remaining region of the substrate excluding the first region.

Abstract: A compound semiconductor light emitting element is provided with a substrate which is provided on a side of one electrode; a plurality of columnar crystal structures of nanometer scale extending in a vertical direction on the substrate; and another electrode which interconnects top portions of the plurality of columnar crystal structures. On the substrate are provided a first region, and a second region having a step between the first region and the second region and having a substrate thickness greater than that in the first region; a porous first mask layer is formed on the surface of the first region on the substrate; and the plurality of columnar crystal structures are formed by sequentially layering an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer, in the first and second regions on the substrate.

Abstract: A curing assembly for curing of inks and the like comprises at least one array of UV LEDs 18. A reflector 4 with an elongate reflective surface 14 partly surrounds the array 18 and has an opening for emission of radiation towards a substrate. A lens 24 is positioned between the array 18 and the opening.

Abstract: A method of testing the through cut of a pipeline comprising at least the steps of: (a) transmitting an electromagnetic signal through the pipeline; (b) monitoring any reflected signal(s); and (c) interpreting the or each reflected signal to test for the through cut of the pipeline. In this way, a non-invasive electromagnetic signal can be passed through, along, across or otherwise within the pipeline, and any reflected signal(s) can be interpreted and analysed based on one or more characteristics of the received signal(s) to ascertain the change in the conductivity of the pipeline due to the cutting thereof, in particular when or whether the cutting of the pipeline is complete or has been completed such that there is a through cut.

Abstract: Provided is a detecting element that detects a parameter for a predetermined gas or liquid in a surrounding atmosphere by being excited by excitation light and generating light corresponding to the surrounding atmosphere, the detecting element including: a substrate; and nanoscale crystal structures formed on the substrate and constituted by a compound semiconductor light emitting element having a heterostructure well layer, wherein when the nanoscale crystal structures adsorb atoms or molecules of the predetermined gas or liquid, there is distortion of a band of a structure with a smaller bandgap width in the well layer, this distortion brings about a change in transition energy, and this change brings about a change in at least one of an intensity and a wavelength of light generated by the well layer, thereby indicating the parameter for the gas or the liquid.

Abstract: A compound semiconductor light emitting element is provided with a substrate which is provided on a side of one electrode; a plurality of columnar crystal structures of nanometer scale extending in a vertical direction on the substrate; and another electrode which interconnects top portions of the plurality of columnar crystal structures. On the substrate are provided a first region, and a second region having a step between the first region and the second region and having a substrate thickness greater than that in the first region; a porous first mask layer is formed on the surface of the first region on the substrate; and the plurality of columnar crystal structures are formed by sequentially layering an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer, in the first and second regions on the substrate.

Abstract: A compound semiconductor light-emitting element includes: a substrate; a first electrode provided on one face of the substrate; a plurality of nanoscale columnar crystalline structures in which an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer are stacked in order on the other face of the substrate; a second electrode connected to top portions of the plurality of columnar crystalline structures; and a foundation layer, provided on the side of the other face, in a first region being a partial region of the substrate; wherein a level difference is provided, on the other face, between the first region and a second region being at least part of a remaining region of the substrate excluding the first region.

Abstract: The present invention provides an inexpensive substrate which can realize m-plane growth of a crystal by vapor phase growth. In a sapphire substrate, an off-angle plane slanted from an m-plane by a predetermined very small angle is prepared as a growth surface, which is a template of the crystal, at the time of growing a crystal of GaN or the like, by a polishing process to prepare a stepwise substrate comprising steps and terraces. According to the above-described configuration, even if an inexpensive sapphire substrate, which normally does not form an m-plane (nonpolar plane) GaN film, is used as a substrate for crystal growth, the following advantages can be attained.