Patents by Inventor David Awschalom

David Awschalom has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10747087
    Abstract: Methods and devices are disclosed for implementing quantum information processing based on electron spins in semiconductor and transition metal compositions. The transition metal electron orbitals split under semiconductor crystal field. The electron ground states are used as qubits. The transitions between the ground states involve electron spin flip. The semiconductor and transition metal compositions may be further included in optical cavities to facilitate quantum information processing. Quantum logic operations may be performed using single color or two color coherent resonant optical excitations via an excited electron state.
    Type: Grant
    Filed: July 29, 2019
    Date of Patent: August 18, 2020
    Assignee: The University of Chicago
    Inventors: David Awschalom, Berk Diler, William Koehl, Samuel James Whiteley
  • Publication number: 20200019038
    Abstract: Methods and devices are disclosed for implementing quantum information processing based on electron spins in semiconductor and transition metal compositions. The transition metal electron orbitals split under semiconductor crystal field. The electron ground states are used as qubits. The transitions between the ground states involve electron spin flip. The semiconductor and transition metal compositions may be further included in optical cavities to facilitate quantum information processing. Quantum logic operations may be performed using single color or two color coherent resonant optical excitations via an excited electron state.
    Type: Application
    Filed: July 29, 2019
    Publication date: January 16, 2020
    Inventors: David Awschalom, Berk Diler, William Koehl, Samuel James Whiteley
  • Patent number: 10372015
    Abstract: Methods and devices are disclosed for implementing quantum information processing based on electron spins in semiconductor and transition metal compositions. The transition metal electron orbitals split under semiconductor crystal field. The electron ground states are used as qubits. The transitions between the ground states involve electron spin flip. The semiconductor and transition metal compositions may be further included in optical cavities to facilitate quantum information processing. Quantum logic operations may be performed using single color or two color coherent resonant optical excitations via an excited electron state.
    Type: Grant
    Filed: March 13, 2017
    Date of Patent: August 6, 2019
    Assignee: The University of Chicago
    Inventors: David Awschalom, Berk Diler, William Koehl, Samuel James Whiteley
  • Publication number: 20170261835
    Abstract: Methods and devices are disclosed for implementing quantum information processing based on electron spins in semiconductor and transition metal compositions. The transition metal electron orbitals split under semiconductor crystal field. The electron ground states are used as qubits. The transitions between the ground states involve electron spin flip. The semiconductor and transition metal compositions may be further included in optical cavities to facilitate quantum information processing. Quantum logic operations may be performed using single color or two color coherent resonant optical excitations via an excited electron state.
    Type: Application
    Filed: March 13, 2017
    Publication date: September 14, 2017
    Inventors: William Koehl, David Awschalom
  • Patent number: 7719071
    Abstract: A bipolar spin transistor is provided. In one embodiment of the present invention, the bipolar spin transistor includes a first semiconductor region having a first conductivity type, a second semiconductor region having a second conductivity type that is different from the first conductivity type and also having a spin polarization, and a third semiconductor region having a conductivity type that is the same conductivity type of the first semiconductor region. The first semiconductor region and the second semiconductor region are adjacent to each other so as to form a first charge depletion layer therebetween, the first charge depletion layer having a first side facing the first semiconductor region and an opposing second side facing the second semiconductor region.
    Type: Grant
    Filed: May 26, 2004
    Date of Patent: May 18, 2010
    Assignee: University of iowa Research Foundation
    Inventors: Michael Edward Flatté, Zhi Gang Yu, Ezekiel Johnston-Halperin, David Awschalom