Abstract: A laminate article comprises a substrate and a biaxially textured (RE1xRE2(1−x))2O3 buffer layer over the substrate, wherein 0<x<1 and RE1 and RE2 are each selected from the group consisting of Nd, Sm, Eu, Ho, Er, Lu, Gd, Tb, Dy, Tm, and Yb. The (RE1xRE2(1−x))2O3 buffer layer can be deposited using sol-gel or metal-organic decomposition. The laminate article can include a layer of YBCO over the (RE1xRE2(1−x))2O3 buffer layer. A layer of CeO2 between the YBCO layer and the (RE1xRE2(1−x))2O3 buffer can also be include. Further included can be a layer of YSZ between the CeO2 layer and the (R1xRE2(1−x))2O3 buffer layer. The substrate can be a biaxially textured metal, such as nickel. A method of forming the laminate article is also disclosed.

Abstract: A laminate article comprises a substrate and a biaxially textured (RE1xRE2(1−x))2O3 buffer layer over the substrate, wherein 0<x<1 and RE1 and RE2 are each selected from the group consisting of Nd, Sm, Eu, Ho, Er, Lu, Gd, Tb, Dy, Tm, and Yb. The (RE1xRE2(1−x))2O3 buffer layer can be deposited using sol-gel or metal-organic decomposition. The laminate article can include a layer of YBCO over the (RE1xRE2(1−x))2O3 buffer layer. A layer of CeO2 between the YBCO layer and the (RE1xRE2(1−x))2O3 buffer can also be include. Further included can be a layer of YSZ between the CeO2 layer and the (R1xRE2(1−x))2O3 buffer layer. The substrate can be a biaxially textured metal, such as nickel. A method of forming the laminate article is also disclosed.

Abstract: A laminate article comprises a substrate and a biaxially textured (RE1xRE2(1−x))2O3 buffer layer over the substrate, wherein 0<x<1 and RE1 and RE2 are each selected from the group consisting of Nd, Sm, Eu, Ho, Er, Lu, Gd, Tb, Dy, Tm, and Yb. The (RE1xRE2(1−x))2O3 buffer layer can be deposited using sol-gel or metal-organic decomposition. The laminate article can include a layer of YBCO over the (RE1xRE2(1−x))2O3 buffer layer. A layer of CeO2 between the YBCO layer and the (RE1xRE2(1−x))2O3 buffer can also be include. Further included can be a layer of YSZ between the CeO2 layer and the (RE1xRE2(1−x))2O3 buffer layer. The substrate can be a biaxially textured metal, such as nickel. A method of forming the laminate article is also disclosed.

Abstract: A laminate article comprises a substrate and a biaxially textured (RE1xRE2(1−x))2O3 buffer layer over the substrate, wherein 0<x<1 and RE1 and RE2 are each selected from the group consisting of Nd, Sm, Eu, Ho, Er, Lu, Gd, Tb, Dy, Tm, and Yb. The (RE1xRE2(1−x))2O3 buffer layer can be deposited using sol-gel or metal-organic decomposition. The laminate article can include a layer of YBCO over the (RE1xRE2(1−x))2O3 buffer layer. A layer of CeO2 between the YBCO layer and the (RE1xRE2(1−x))2O3 buffer can also be include. Further included can be a layer of YSZ between the CeO2 layer and the (RE1xRE2(1−x))2O3 buffer layer. The substrate can be a biaxially textured metal, such as nickel. A method of forming the laminate article is also disclosed.

Abstract: A method is disclosed for forming a biaxially textured buffer layer on a biaxially oriented metal substrate by using a sol-gel coating technique followed by pyrolyzing/annealing in a reducing atmosphere. This method is advantageous for providing substrates for depositing electronically active materials thereon.

Abstract: A method is disclosed for forming a biaxially textured buffer layer on a biaxially oriented metal substrate by using a sol-gel coating technique followed by pyrolyzing/annealing in a reducing atmosphere. This method is advantageous for providing substrates for depositing electronically active materials thereon.

Abstract: A CVD process for producing a rare earth-doped, epitaxial semiconductor layer on a substrate is disclosed. The process utilizes a silane or germane and a rare earth compound in the gas phase. By this method single phase, rare earth-doped semiconductor layers, supersaturated in the rare earth, are produced. The preferred rare earth is erbium and the preferred precursors for depositing erbium by CVD are erbium hexafluoroacetylacetonate, acetylacetonate, tetramethylheptanedionate and flurooctanedionate. The process may be used to produce optoelectronic devices comprising a silicon substrate and an erbium-doped epitaxial silicon film.

Abstract: A storage capacitor having high dielectric constant materials and a method for forming same are described. The method solves the problems associated with fabrication of planar capacitors for DRAM chips constructed from inorganic oxides with perovskite structure. These materials are not readily etched by conventional ion etching techniques. These materials also react with silicon and silicon dioxide and the disclosed process avoids these interactions.

Abstract: A storage capacitor having high dielectric constant materials and a method for forming same are described. The method solves the problems associated with fabrication of planar capacitors for DRAM chips constructed from inorganic oxides with perovskite structure. These materials are not readily etched by conventional ion etching techniques. These materials also react with silicon and silicon dioxide and the disclosed process avoids these interactions.

Abstract: A CVD process for producing a rare earth-doped, epitaxial semiconductor layer on a substrate is disclosed. The process utilizes a silane or germane and a rare earth compound in the gas phase. By this method single phase, rare earth-doped semiconductor layers, supersaturated in the rare earth, are produced. The preferred rare earth is erbium and the preferred precursors for depositing erbium by CVD are erbium hexafluoroacetylacetonate, acetylacetonate, tetramethylheptanedionate and flurooctanedionate. The process may be used to produce optoelectronic devices comprising a silicon substrate and an erbium-doped epitaxial silicon film.

Abstract: Improved processes are described for the deposition of Cu and group IB metals such as Ag and Au. These processes include thermal CVD, photothermal depositions and photochemical deposition. The gaseous precursor which leads to successful deposition of high quality films at low temperatures includes a cyclopentadienyl ring, a two electron donor ligand, and the group IB metal in a +1 oxidation state. In addition, derivatives of the cyclopentadienyl ring can be used where the substituents on the ring include those selected from alkyl groups, halide groups, and psuedohalide groups. In addition, the two electron donor ligand can be selected from the group consisting of trivalent phosphines, amines and arsines. A representative precursor for the deposition of Cu is triethylphosphine cyclopentadienyl copper (I).