Abstract: A method of processing the surface of a workpiece using an adaptive gas cluster ion beam is disclosed. The invention provides a method of reducing the surface roughness and/or improving the surface smoothing of a workpiece by etching at various etch rates. The workpiece is initially processed with a gas cluster ion beam having an initial etch rate and then the beam is adjusted so that the workpiece is processed with one or more lower etch rates. The advantages are minimum required processing time, minimum remaining roughness of the final surface, and minimum material removal in order to attain a desired level of smoothness.

Abstract: The present invention provides apparatus and methods to carry out the task of both reducing the surface roughness (smoothing) and improving the thickness uniformity of, preferably, but not limited thereto, the top silicon film of a silicon-on-insulator (SOI) wafer or similar thin-film electronic and photonic materials (workpiece). It also provides a method and apparatus for smoothing the surface of a (preferably) SOI wafer (workpiece) and for making the surface of the silicon film of a (preferably) SOI wafer cleaner and more free from contaminants.

Abstract: Methods are disclosed for gas-cluster ion-beam deposition of thin films on silicon wafers rendered free of native oxides by termination of the surface bonds and subsequent reactive deposition. Hydrogen termination of the surface of silicon renders it inert to reoxidation from oxygen-containing environmental gasses, even those found as residue in vacuum systems, such as those used to deposit films. Nitrogen termination improves the interface with overlying metal-oxide thin films. The film is formed in intimate contact with the silicon crystal surface forming a nearly ideal interface.

Abstract: A method of processing the surface of a workpiece using an adaptive gas cluster ion beam is disclosed. The invention provides a method of reducing the surface roughness and/or improving the surface smoothing of a workpiece by etching at various etch rates. The workpiece is initially processed with a gas cluster ion beam having an initial etch rate and then the beam is adjusted so that the workpiece is processed with one or more lower etch rates. The advantages are minimum required processing time, minimum remaining roughness of the final surface, and minimum material removal in order to attain a desired level of smoothness.

Abstract: A method and apparatus for adapting the nature of an ion beam during processing of the surface of a solid workpiece so as to improve the reduction of surface roughness (smoothing) by using a GCIB. In addition, the invention provides for surface smoothing in combination with etching to predetermined depths and surface contamination removal. Advantages are minimum required processing time, minimum remaining roughness of the final surface, and reduction in the amount of material that must be removed in order to attain a desired level of smoothness.

Abstract: The present invention provides apparatus and methods to carry out the task of both reducing the surface roughness (smoothing) and improving the thickness uniformity of, preferably, but not limited thereto, the top silicon film of a silicon-on-insulator (SOI) wafer or similar thin-film electronic and photonic materials (workpiece). It also provides a method and apparatus for smoothing the surface of a (preferably) SOI wafer (workpiece) and for making the surface of the silicon film of a (preferably) SOI wafer cleaner and more free from contaminants.

Abstract: An HTSC material epitaxially deposited on a YSZ buffer layer on a surface of a monocrystalline silicon substrate has a zero resistance transition temperature of at least 85.degree. K., a transition width (10-90%) of no more than 1.0.degree. K., a resistivity at 300.degree. K. of no more than 300 micro-ohms-centimeter and a resistivity ratio (at 300.degree. K./100.degree. K.) of 3.0.+-. 0.2. The surface of the silicon substrate is cleaned using a spin-etch process to produce an atomically clean surface terminated with an atomic layer of an element such as hydrogen with does not react with silicon. The substrate can be moved to a deposition chamber without contamination. The hydrogen is evaporated in the chamber, and then YSZ is epitaxially deposited preferably by laser ablation. Thereafter, the HTSC material, such as YBCO, is epitaxially deposited preferably by laser ablation. The structure is then cooled in an atmosphere of oxygen.

Abstract: An array of superconducting bolometers, assembled with a superposed interference layer of graduated thickness, provides a microelectronic detector assembly that discriminates radiation impinging thereon, as a function of wavelength, and that can be used for transform spectroscopy, color-imaging, and the like. The interference coating will preferably be of step-like form, with each plateau of the structure being of the same spatial extent as the bolometer with which it is associated.

Abstract: An HTSC material epitaxially deposited on a YSZ buffer layer on a surface of a monocrystalline silicon substrate has a zero resistance transition temperature of at least 85.degree. K., a transition width (10-90%) of no more than 1.0.degree. K., a resistivity at 300.degree. K. of no more than 300 micro-ohms-centimeter and a resistivity ratio (at 300.degree. K./100.degree. K.) of 3.0.+-.0.2. The surface of the silicon substrate is cleaned using a spin-etch process to produce an atomically clean surface terminated with an atomic layer of an element such as hydrogen with does not react with silicon. The substrate can be moved to a deposition chamber without contamination. The hydrogen is evaporated in the chamber, and then YSZ is epitaxially deposited preferably by laser ablation. Thereafter, the HTSC material, such as YBCO, is epitaxially deposited preferably by laser ablation. The structure is then cooled in an atmosphere of oxygen.

Abstract: An array of superconducting bolometers, assembled with a superposed interference layer of graduated thickness, provides a microelectronic detector assembly that discriminates radiation impinging thereon, as a function of wavelength, and that can be used for transform spectroscopy, color-imaging, and the like. The interference coating will preferably be of step-like form, with each plateau of the structure being of the same spatial extent as the bolometer with which it is associated.