Abstract: A fuel for splitting water into hydrogen and an oxide component comprises a substantially solid pellet formed from a solid-like mixture of a solid-state source material capable of oxidizing in water to form hydrogen and a passivation surface layer of the oxide component, and a passivation preventing agent that is substantially inert to water in an effective amount to prevent passivation of the solid-state material during oxidation. The pellets may be introduced into water or other suitable oxidizer in a controlled rate to control the rate of reaction of the source material with the oxidizer, and thereby control the rate of formation of hydrogen. Methods are described for producing the solid-like mixture in varying weight percent of source material to passivation preventing agent.

Abstract: This invention relates to an improved high efficiency solar cell with a “HEGC stack-dichroic mirror-MEGC stack” architecture or a “HEGC stack-dichroic mirror-MEGC stack-LEGC stack” architecture. The improvement comprises the addition of a silicon cell to act as a scavenger cell to absorb light that would otherwise not be absorbed and to convert that energy to electricity. The silicon cell is positioned adjacent to the cell with the smallest energy gap of the cells in the MEGC stack.

Abstract: An apparatus for constructing, repairing and operating modular electronic systems utilizes peripheral half-capacitors (i.e., conductive plates on the outside of the modules) to communicate non-conductively between abutting modules. Such systems provide lower cost, improved testability/reparability and greater density than conventional modular packaging techniques, such as printed circuit boards and multi-chip modules. The non-conductive interconnection technique of the invention can be applied to all levels in the packaging hierarchy, from bare semiconductor dies to complete functional sub-units. Numerous exemplary systems and applications are described.

Abstract: This invention relates to an improved high efficiency solar cell with a “HEGC stack-dichroic mirror-MEGC stack” architecture or a “HEGC stack-dichroic mirror-MEGC stack-LEGC stack” architecture. The improvement comprises the addition of a silicon cell to act as a scavenger cell to absorb light that would otherwise not be absorbed and to convert that energy to electricity. The silicon cell is positioned adjacent to the cell with the smallest energy gap of the cells in the MEGC stack.

Abstract: Methods are disclosed for producing highly doped semiconductor materials. Using the invention, one can achieve doping densities that exceed traditional, established carrier saturation limits without deleterious side effects. Additionally, highly doped semiconductor materials are disclosed, as well as improved electronic and optoelectronic devices/components using said materials. The innovative materials and processes enabled by the invention yield significant performance improvements and/or cost reductions for a wide variety of semiconductor-based microelectronic and optoelectronic devices/systems. Materials are grown in an anion-rich environment, which, in the preferred embodiment, are produced by moderate substrate temperatures during growth in an oxygen-poor environment.

Abstract: A method and apparatus for constructing, repairing and operating modular electronic systems utilizes peripheral half-capacitors (i.e., conductive plates on the outside of the modules) to communicate non-conductively between abutting modules. Such systems provide lower cost, improved testability/reparability and greater density than conventional modular packaging techniques, such as printed circuit boards and multi-chip modules. The non-conductive interconnection technique of the invention can be applied to all levels in the packaging hierarchy, from bare semiconductor dies to complete functional sub-units.

Abstract: Methods are disclosed for producing highly doped semiconductor materials. Using the invention, one can achieve doping densities that exceed traditional, established carrier saturation limits without deleterious side effects. Additionally, highly doped semiconductor materials are disclosed, as well as improved electronic and optoelectronic devices/components using said materials. The innovative materials and processes enabled by the invention yield significant performance improvements and/or cost reductions for a wide variety of semiconductor-based microelectronic and optoelectronic devices/systems. Materials are grown in an anion-rich environment, which, in the preferred embodiment, are produced by moderate substrate temperatures during growth in an oxygen-poor environment.

Abstract: Methods and apparatus are described for capacitively signaling between different semiconductor chips and modules without the use of connectors, solder bumps, wire-bond interconnections or the like. Preferably, pairs of half-capacitor plates, one half located on each chip, module or substrate are used to capacitively couple signals from one chip, module or substrate to another. The use of plates relaxes the need for high precision alignment as well as reduces the area needed to effect signaling, and reduces or eliminates the requirements for exotic metallurgy.

Abstract: A solid state microchannel plate is disclosed comprising a multiplicity of photodetector elements, each using limited gain from a small Geiger mode avalanche and summing the contributions thereof. An array of such multiplicities operates as a pixelated linear or area photodetector. In the preferred embodiment, a multiplicity of passively quenched photodetector elements connect to a common anode, and each photodetector element is passively quenched by its own current-limiting resistor in series with its cathode.

Abstract: Apparatus is described for capacitively signalling between different semiconductor chips and modules without the use of connectors, solder bumps, wire-bond interconnections or the like. Preferably, pairs of half-capacitor plates, one half located on each chip, module or substrate are used to capacitively couple signals from one chip, module or substrate to another. The use of plates relaxes the need for high precision alignment as well as reduces the area needed to effect signalling, and reduces or eliminates the requirements for exotic metallurgy.

Abstract: Methods are disclosed for producing highly doped semiconductor materials. Using the invention, one can achieve doping densities that exceed traditional, established carrier saturation limits without deleterious side effects. Additionally, highly doped semiconductor materials are disclosed, as well as improved electronic and optoelectronic devices/components using said materials. The innovative materials and processes enabled by the invention yield significant performance improvements and/or cost reductions for a wide variety of semiconductor-based microelectronic and optoelectronic devices/systems.

Abstract: An ultra-fast optical apparatus and methods for reading and writing optical intensities are disclosed. A shutter uses a spintronic device exploiting the quantum Faraday effect to sample or modulate the intensity of an optical data stream, preferably as bits in a digital data train. The methods set or sample the intensity. A useful application of the methods and apparatus sets or samples optical intensities, taking or putting them, whether in optical or electrical form, optionally at a demultiplexed bus width or data rate. Optical logic, memory and communication devices and methods are disclosed.

Abstract: An ultra-fast shutter apparatus and methods for reading and writing optical intensities are disclosed. The shutter uses a spintronic device exploiting the quantum Faraday effect to sample or modulate the intensity of an optical data stream, preferably as bits in a digital data train. The methods set or sample the intensity. A useful application of the methods and apparatus sets or samples optical intensities, taking or putting them, whether in optical or electrical form, optionally at a demultiplexed bus width or data rate.

Abstract: A method and apparatus for constructing, repairing and operating modular electronic systems utilizes peripheral half-capacitors (i.e., conductive plates on the outside of the modules) to communicate non-conductively between abutting modules. Such systems provide lower cost, improved testability/repairability and greater density than conventional modular packaging techniques, such as printed circuit boards and multi-chip modules. The non-conductive interconnection technique of the invention can be applied to all levels in the packaging hierarchy, from bare semiconductor dies to complete functional sub-units. Numerous exemplary systems and applications are described.