Patents by Inventor David Badt

David Badt has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240234112
    Abstract: Multi-pixel sensors such as camera sensors may be configured to capture two-dimensional and/or three-dimensional images of the interior of a process chamber or other fabrication tool. The sensors may be configured to capture pixelated electromagnetic radiation intensity information from within the interior of such process chamber before, during, and/or after processing of a substrate in the chamber. Such sensors may also be utilized for control, predictive, and/or diagnostic applications.
    Type: Application
    Filed: July 1, 2022
    Publication date: July 11, 2024
    Inventors: Michal Danek, Benjamin Allen Haskell, Kapu Sirish Reddy, David Badt, Brian Joseph Williams, Paul Franzen, Karl Frederick Leeser, Jennifer Leigh Petraglia, Yukinori Sakiyama, Kapil Sawlani
  • Patent number: 6130159
    Abstract: Processing of substrates in a CVD reactor system wherein tungsten silicide is deposited is accomplished with preflow and postflow of reducing gases before and after deposition steps to ensure that tungsten-rich film is not deposited at the interface of the tungsten silicide film to the substrates or on the tungsten silicide film at the end of deposition processing. For systems having a remote gas injection and flow control system connected by a gas supply manifold to a CVD reactor chamber, an isolation valve is provided in the gas supply manifold, and the valve is held closed during at least a portion of time between deposition sequences.
    Type: Grant
    Filed: August 3, 1999
    Date of Patent: October 10, 2000
    Assignee: Genus, Inc
    Inventors: Sien G. Kang, John Y. Adachi, David Badt, Edward L. Sill, Hector Velasco
  • Patent number: 5963836
    Abstract: Processing of substrates in a CVD reactor system wherein tungsten silicide is deposited is accomplished with preflow and postflow of reducing gases before and after deposition steps to ensure that tungsten-rich film is not deposited at the interface of the tungsten silicide film to the substrates or on the tungsten silicide film at the end of deposition processing. For systems having a remote gas injection and flow control system connected by a gas supply manifold to a CVD reactor chamber, an isolation valve is provided in the gas supply manifold, and the valve is held closed during at least a portion of time between deposition sequences.
    Type: Grant
    Filed: December 3, 1996
    Date of Patent: October 5, 1999
    Assignee: Genus, Inc.
    Inventors: Sien G. Kang, John Y. Adachi, David Badt, Edward L. Sill, Hector Velasco