Abstract: In an illustrative example, an apparatus includes a passive-on-glass (POG) device integrated within a glass substrate. The apparatus further includes a semiconductor die integrated within the glass substrate.

Abstract: An RF diplexer is provided that includes a first channel and a second channel. The first channel includes a first primary inductor. Similarly, the second channel includes a second primary inductor. A first directional coupler for the first channel includes a first transformer formed by the first primary inductor and also a first secondary inductor. A first terminal for the first secondary inductor is a coupled port for the first directional coupler. A second directional coupler for the second channel includes a second transformer formed by the second primary inductor and also a second secondary inductor. A first terminal for the second secondary inductor is a coupled port for the second directional coupler.

Abstract: In an illustrative example, an apparatus includes a passive-on-glass (POG) device integrated within a glass substrate. The apparatus further includes a semiconductor die integrated within the glass substrate.

Abstract: In an illustrative example, an apparatus includes a passive-on-glass (POG) device integrated within a glass substrate. The apparatus further includes a semiconductor die integrated within the glass substrate.

Abstract: A single-die multi-FBAR (film bulk acoustic resonator) device includes multiple FBARs having different resonant frequencies formed over a single substrate. The FBARs include piezoelectric layers having different thicknesses but with upper electrodes formed at a same height over the substrate, lower electrodes at different heights over the substrate, and different sized air gaps separating the lower electrodes from the substrate.

Abstract: A device that includes a single substrate layer, a plurality of interconnects over the single substrate layer, the plurality of interconnects configured to operate as at least one passive component, a first die coupled to the single substrate layer and the plurality of interconnects, and an encapsulation layer that at least partially encapsulates the first die and the plurality of interconnects configured to operate as at least one passive component. In some implementations, the single substrate layer, the first die and the encapsulation layer comprise an overall thickness of about 225 microns (?m) or less. In some implementations, the single substrate layer comprises a thickness of about 75 microns (?m) or less.

Abstract: A single-die multi-FBAR (film bulk acoustic resonator) device includes multiple FBARs having different resonant frequencies formed over a single substrate. The FBARs include piezoelectric layers having different thicknesses but with upper electrodes formed at a same height over the substrate, lower electrodes at different heights over the substrate, and different sized air gaps separating the lower electrodes from the substrate.

Abstract: In an illustrative example, an apparatus includes a passive-on-glass (POG) device integrated within a glass substrate. The apparatus further includes a semiconductor die integrated within the glass substrate.

Abstract: An RF diplexer is provided with an integrated diplexer that shares a primary inductor included in a channel within the RF diplexer.

Abstract: Conventional ways of coupling die packages to external devices include providing contacts on a separate area on a printed circuit board (PCB). These PCB contacts are configured to mate with connector contacts of a connector to enable coupling with external devices. Unfortunately, the PCB contacts take up significant amount of area of the PCB. Also, the connection can suffer from parasitic losses and signal integrity can be compromised. An on-package connection is proposed to address the short comings of the conventional ways. The on-package connection enables a die package to connect directly with the connector. This removes the need to provide a separate area for PCB contacts. Also, parasitic losses are minimized and signal integrity is enhanced.