Abstract: A semiconductor film composition includes an oxide semiconductor material. At least one polyatomic ion is incorporated into the oxide semiconductor material.

Abstract: A method and apparatus for the extraction of particles from surfaces is disclosed. A preferred method comprises the steps of (1) adjusting the temperature and humidity of an air supply to provide an adjusted air supply, (2) directing a blast from the adjusted air supply to a surface bearing particles, so as to produce a deflected blast that comprises some of the particles from the surface, (3) collecting the deflected blast and particles, and (4) directing the deflected blast and particles towards an analyzer. A preferred apparatus includes an air adjuster and a probe comprising an adjusted air supply passage, an adjusted air aperture, a deflected air aperture, and a deflected air passage, wherein the air adjuster is adapted to provide a flow of adjusted air to the adjusted air supply passage and the adjusted air aperture.

Abstract: A semiconductor film composition includes an oxide semiconductor material. At least one polyatomic ion is incorporated into the oxide semiconductor material.

Abstract: A method and apparatus for the extraction of particles from surfaces is disclosed. A preferred method comprises the steps of (1) adjusting the temperature and humidity of an air supply to provide an adjusted air supply, (2) directing a blast from the adjusted air supply to a surface bearing particles, so as to produce a deflected blast that comprises some of the particles from the surface, (3) collecting the deflected blast and particles, and (4) directing the deflected blast and particles towards an analyzer. A preferred apparatus includes an air adjuster and a probe comprising an adjusted air supply passage, an adjusted air aperture, a deflected air aperture, and a deflected air passage, wherein the air adjuster is adapted to provide a flow of adjusted air to the adjusted air supply passage and the adjusted air aperture. The flow may be continuous, intermittent, pulsed or periodic.

Abstract: A semiconductor film composition includes an oxide semiconductor material. At least one polyatomic ion is incorporated into the oxide semiconductor material.

Abstract: A support structure includes a support stand operable with a supported article. The support stand has a pair of side pieces. Each side piece includes a main beam, wherein a length of the main beam is optionally adjustable, and an angle beam joined to the main beam at an outward joining angle of from about 20 to about 60 degrees thereto. The main beams of the two side pieces are spaced apart and are parallel to each other. The support stand further includes two or more cross beams. The cross beams are spaced apart from each other and are each affixed to the two side pieces to form a top frame. A support base extends downwardly from the top frame and includes a pair of leading columns, wherein one of the leading columns is affixed to each of the main beams, and a pair of trailing columns, wherein one of the trailing columns is affixed to each of the angle beams. Desirably, a length of each of the leading columns and a length of each of the trailing columns is adjustable.