Patents by Inventor David Boldrin

David Boldrin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11152562
    Abstract: A non-volatile memory cell comprising: a storage layer comprised of a ferromagnetic or ferroelectric material in which data is recordable as a direction of magnetic or electric polarisation; a piezomagnetic layer comprised of an antiperovskite piezomagnetic material selectively having a first type of effect on the storage layer and a second type of effect on the storage layer dependent upon the magnetic state and strain in the piezomagnetic layer; and a strain inducing layer for inducing a strain in the piezomagnetic layer thereby to switch from the first type of effect to the second type of effect.
    Type: Grant
    Filed: December 6, 2017
    Date of Patent: October 19, 2021
    Assignee: IP2IPO Innovations Limited
    Inventors: Jan Zemen, Andrei Paul Mihai, Bin Zou, David Boldrin, Evgeniy Donchev
  • Publication number: 20190363247
    Abstract: A non-volatile memory cell comprising: a storage layer comprised of a ferromagnetic or ferroelectric material in which data is recordable as a direction of magnetic or electric polarisation; a piezomagnetic layer comprised of an antiperovskite piezomagnetic material selectively having a first type of effect on the storage layer and a second type of effect on the storage layer dependent upon the magnetic state and strain in the piezomagnetic layer; and a strain inducing layer for inducing a strain in the piezomagnetic layer thereby to switch from the first type of effect to the second type of effect.
    Type: Application
    Filed: December 6, 2017
    Publication date: November 28, 2019
    Inventors: Jan Zemen, Andrei Paul Mihai, Bin Zou, David Boldrin, Evgenly Donchev