Abstract: The present invention discloses that under modified chemical vapor deposition (mCVD) conditions an epitaxial silicon film may be formed by exposing a substrate contained within a chamber to a relatively high carrier gas flow rate in combination with a relatively low silicon precursor flow rate at a temperature of less than about 550° C. and a pressure in the range of about 10 mTorr-200 Torr. Furthermore, the crystalline Si may be in situ doped to contain relatively high levels of substitutional carbon by carrying out the deposition at a relatively high flow rate using tetrasilane as a silicon source and a carbon-containing gas such as dodecalmethylcyclohexasilane or tetramethyldisilane under modified CVD conditions.

Abstract: A machine to form the heads of coils made of relatively large rectangular wire so that it fits within the slots of the stator of an electric machine is described herein. The machine receives a coil having unformed first and second heads separated by first and second legs and apply controlled deformation thereto to yield properly shaped heads. The machine comprises first and second leg support mechanisms for gripping the first and second legs and four head forming elements for contacting portions of the heads of the wire coil while the first and second legs are gripped by the leg support. The head forming elements are mounted to the first and second leg support mechanisms for relative movement therebetween. Actuators, coupled to a controller so as to be controlled therefrom are provided for moving the head forming elements and the first and second heads between spaced apart relationships and forming relationships.

Abstract: Cyclohexasilane is used in chemical vapor deposition methods to deposit epitaxial silicon-containing films over substrates. Such methods are useful in semiconductor manufacturing to provide a variety of advantages, including uniform deposition over heterogeneous surfaces, high deposition rates, and higher manufacturing productivity. Furthermore, the crystalline Si may be in situ doped to contain relatively high levels of substitutional carbon by carrying out the deposition at a relatively high flow rate using cyclohexasilane as a silicon source and a carbon-containing gas such as dodecalmethylcyclohexasilane or tetramethyldisilane under modified CVD conditions.

Abstract: The present invention discloses that under modified chemical vapor deposition (mCVD) conditions an epitaxial silicon film may be formed by exposing a substrate contained within a chamber to a relatively high carrier gas flow rate in combination with a relatively low silicon precursor flow rate at a temperature of less than about 550° C. and a pressure in the range of about 10 mTorr-200 Torr. Furthermore, the crystalline Si may be in situ doped to contain relatively high levels of substitutional carbon by carrying out the deposition at a relatively high flow rate using tetrasilane as a silicon source and a carbon-containing gas such as dodecalmethylcyclohexasilane or tetramethyldisilane under modified CVD conditions.

Abstract: A coiling machine configured to coil semi-rigid rectangular wires without using a core to wind the wire thereonto, yielding a free-standing coil is described herein. The coiling machine comprises a wire bending mechanism including a wire holding assembly for selectively immobilizing a wire and a wire bending assembly for bending a selected portion of the wire at an angle while the wire is immobilized by the wire holding assembly; a wire feeding mechanism for receiving the wire from a wire drawing mechanism and for feeding a length of the wire to the wire bending mechanism; and a controller coupled to the wire drawing mechanism, wire bending mechanism and wire feeding mechanism to control their operations for sequentially bending the wire at predetermined positions therealong so as to yield a coil of wire.

Abstract: A machine to form the heads of coils made of relatively large rectangular wire so that it fits within the slots of the stator of an electric machine is described herein. The machine receives a coil having unformed first and second heads separated by first and second legs and apply controlled deformation thereto to yield properly shaped heads. The machine comprises first and second leg support mechanisms for gripping the first and second legs and four head forming elements for contacting portions of the heads of the wire coil while the first and second legs are gripped by the leg support. The head forming elements are mounted to the first and second leg support mechanisms for relative movement therebetween. Actuators, coupled to a controller so as to be controlled therefrom are provided for moving the head forming elements and the first and second heads between spaced apart relationships and forming relationships.