Patents by Inventor David Bruce VAIL

David Bruce VAIL has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Power semiconductor device with an auxiliary gate structure
    Patent number: 11257811
    Abstract: The disclosure relates to a III-nitride power semiconductor based heterojunction device including a low voltage terminal, a high voltage terminal, a control terminal and an active heterojunction transistor formed on a substrate, and further including the following monolithically integrated components: voltage clamp circuit configured to limit a maximum potential that can be applied to the internal gate terminal, an on-state circuit configured to control the internal gate terminal of the active heterojunction transistor during an on-state operation, a turn-off circuit configured to control the internal gate terminal of the active heterojunction transistor during a turn-off operation and during an off-state.
    Type: Grant
    Filed: July 2, 2020
    Date of Patent: February 22, 2022
    Assignee: Cambridge Enterprise Limited
    Inventors: Martin Arnold, Loizos Efthymiou, David Bruce Vail, John William Findlay, Giorgia Longobardi, Florin Udrea
  • POWER SEMICONDUCTOR DEVICE WITH AN AUXILIARY GATE STRUCTURE
    Publication number: 20200335493
    Abstract: The disclosure relates to a III-nitride power semiconductor based heterojunction device including a low voltage terminal, a high voltage terminal, a control terminal and an active heterojunction transistor formed on a substrate, and further including the following monolithically integrated components: voltage clamp circuit configured to limit a maximum potential that can be applied to the internal gate terminal, an on-state circuit configured to control the internal gate terminal of the active heterojunction transistor during an on-state operation, a turn-off circuit configured to control the internal gate terminal of the active heterojunction transistor during a turn-off operation and during an off-state.
    Type: Application
    Filed: July 2, 2020
    Publication date: October 22, 2020
    Inventors: Martin ARNOLD, Loizos EFTHYMIOU, David Bruce VAIL, John William FINDLAY, Giorgia LONGOBARDI, Florin UDREA