Patents by Inventor David C. Caruth

David C. Caruth has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Indium phosphide heterojunction bipolar transistor layer structure and method of making the same
    Patent number: 6770919
    Abstract: An expitaxial layer structure that achieves reliable, high speed, and low noise device performance in indium phosphide (InP) based heterojunction bipolar transistors (HBTs) for high data rate receivers and optoelectronic integrated circuits (OEIC). The layer consists of an n+ InGaAs subcollector, an n+ InP subcollector, an unintentionally doped InGaAs collector, a carbon-doped base, an n-type InP emitter, an n-type InGaAs etch-stop layer, an n-type InP emitter, and anInGaAS cap layer.
    Type: Grant
    Filed: December 30, 2002
    Date of Patent: August 3, 2004
    Assignee: XINDIUM Technologies, Inc.
    Inventors: Milton Feng, Shyh Chiang, David C. Caruth
  • INDIUM PHOSPHIDE HETEROJUNCTION BIPOLAR TRANSISTOR LAYER STRUCTURE AND METHOD OF MAKING THE SAME
    Publication number: 20040124436
    Abstract: An epitaxial layer structure that achieves reliable, high speed, and low noise device performance in indium phosphide (InP) based heterojunction bipolar transistors (HBTs) for high data rate receivers and optoelectronic integrated circuits (OEIC). The layer consists of an n+InGaAs subcollector, an n+InP subcollector, an unintentionally doped InGaAs collector, a carbon-doped base, an n-type InP emitter, an n-type InGaAs etch-stop layer, an n-type InP emitter, and an InGaAs cap layer.
    Type: Application
    Filed: December 30, 2002
    Publication date: July 1, 2004
    Inventors: Milton Feng, Shyh-Chiang Shen, David C. Caruth