Abstract: A chair and tablet combination has a tablet movable from a generally horizontal, operative position above the seat and in front of the backrest to a vertical stored position beside the chair. The chair may have upright and reclined positions for the occupant, and the tablet remains stationary when the chair moves from one position to another.

Abstract: Transmissivity is restored to a gallium stained substrate by directing an electron beam to the substrate in the presence of an etching gas. For higher concentrations of implanted gallium, the transparency can be substantially restored without reducing the thickness of the substrate. For lower doses of implanted gallium, the transmission is restored to 100%, although the thickness of the substrate is reduced. The invention is suitable for use in the repair of photolithography masks.

Abstract: Masks can be repaired by creating a structure that is different from the original design, but that produces the same aerial image. For example, missing opaque material can be replaced by implanting gallium atoms to reduce transmission and quartz can be etched to an appropriate depth to produce the proper phase. In another aspect, a laser or other means can be used to remove an area of a mask around a defect, and then mask structures, either the intended design structures or alternate structures that produce the same aerial image, can be constructed using charged particle beam deposition and etching. For example, an electron beam can be used to deposit quartz to alter the phase of transmitted light. An electron beam can also be used with a gas to etch quartz to remove a layer including implanted gallium atoms. Gallium staining can also be reduced or eliminated by providing a sacrificial layer that can be removed, along with the implanted gallium atoms, using, for example, a broad ion beam.

Abstract: A method and apparatus for electron beam processing using an electron beam activated gas to etch or deposit material. The invention is particularly suitable for repairing defects in lithography masks. By using an electron beam in place of an ion beam, the many problems associated with ion beam mask repair, such as staining and riverbedding, are eliminated. Endpoint detection is not critical because the electron beam and gas will not etch the substrate. In one embodiment, xenon difluoride gas is activated by the electron beam to etch a tungsten, tantalum nitride, or molybdenum silicide film on a transmission or reflection mask. To prevent spontaneous etching by the etchant gas in processed sites at which the passivation layer was removed, processed sites can be re-passivated before processing additional sites.

Abstract: A method of repairing opaque defects in lithography masks entails focused ion beam milling in at least two steps. The first step uses a large pixel spacing to form multiple holes in the defect material, with the milled area extending short of the defect material edge. The final step uses a pixel spacing sufficiently close to produce a smooth floor on the milled area, and extends to the edge of the defect. During the second step, an etch enhancing gas such as bromine is preferably used.

Abstract: A DMA computer system (10) for driving a peripheral device such as an LCD display (12) of a GPS receiver without stealing excessive cycles from a CPU (18). The DMA computer system (10) includes a CPU (18), a first memory (20) that may be written to or read by the CPU (18), a second memory (22) that may be written to or read by the CPU (18), and a DMA controller (24) coupled with the CPU (18) and the second memory (22). The DMA controller (24) is operable to: read data from the second memory (22) and transfer the data to the peripheral device; delay the CPU (18) from accessing the second memory (22) while the DMA controller (24) is reading data from the second memory (22); enable the CPU (18) to regain access to the second memory (22) once the DMA controller (24) has finished reading data from the second memory (22); and allow the CPU (18) to access the first memory (20) without delay even while the DMA controller (24) is reading data from the second memory (22).

Abstract: A DMA computer system (10) for driving a peripheral device such as an LCD display (12) of a GPS receiver without stealing excessive cycles from a CPU (18). The DMA computer system (10) includes a CPU (18), a first memory (20) that may be written to or read by the CPU (18), a second memory (22) that may be written to or read by the CPU (18), and a DMA controller (24) coupled with the CPU (18) and the second memory (22). The DMA controller (24) is operable to: read data from the second memory (22) and transfer the data to the peripheral device; delay the CPU (18) from accessing the second memory (22) while the DMA controller (24) is reading data from the second memory (22); enable the CPU (18) to regain access to the second memory (22) once the DMA controller (24) has finished reading data from the second memory (22); and allow the CPU (18) to access the first memory (20) without delay even while the DMA controller (24) is reading data from the second memory (22).

Abstract: A charged particle beam uniformly removes material, particularly crystalline material, from an area of a target by compensating for or altering the crystal orientation or structure of the material to be removed. The invention is particularly suited for FIB micromachining of copper-based crystalline structures. Uniformity of material removal can be improved, for example, by passing incoming ions through a sacrificial layer formed on the surface of the material to be removed. The sacrificial layer is removed along with the material being milled. Uniformity of removal can also be improved by changing the morphology of the material to be removed, for example, by disrupting its crystal structure or by altering its topography.

Abstract: A method and apparatus for electron beam processing using an electron beam activated gas to etch or deposit material. The invention is particularly suitable for repairing defects in lithography masks. By using an electron beam in place of an ion beam, the many problems associated with ion beam mask repair, such as staining and riverbedding, are eliminated. Endpoint detection is not critical because the electron beam and gas will not etch the substrate. In one embodiment, xenon difluoride gas is activated by the electron beam to etch a tungsten, tantalum nitride, or molybdenum silicide film on a transmission or reflection mask. To prevent spontaneous etching by the etchant gas in processed sites at which the passivation layer was removed, processed sites can be re-passivated before processing additional sites.

Abstract: A charged particle beam uniformly removes material, particularly crystalline material, from an area of a target by compensating for or altering the crystal orientation or structure of the material to be removed. The invention is particularly suited for FIB micromachining of copper-based crystalline structures. Uniformity of material removal can be improved, for example, by passing incoming ions through a sacrificial layer formed on the surface of the material to be removed. The sacrificial layer is removed along with the material being milled. Uniformity of removal can also be improved by changing the morphology of the material to be removed, for example, by disrupting its crystal structure or by altering its topography.

Abstract: A method of enhancing charged particle beam etching particularly suitable for copper interconnects, includes milling at non-contiguous locations to prevent the formation or propagation of an etch-resistant region within the rastered area. Two or more milling boxes are typically performed, one or more of the boxes having pixel spacing greater than the spot size, with the last box using a conventional pixel spacing (default mill) smaller than the spot size to produce a uniform, planar floor of the etched area.

Abstract: A method of repairing opaque defects in lithography masks entails focused ion beam milling in at least two steps. The first step uses a large pixel spacing to form multiple holes in the defect material, with the milled area extending short of the defect material edge. The final step uses a pixel spacing sufficiently close to produce a smooth floor on the milled area, and extends to the edge of the defect. During the second step, an etch enhancing gas such as bromine is preferably used.

Abstract: The present invention generally provides methods for employing a focused particle beam system in the removal of an excess portion from a workpiece having an opaque film patterned on a substrate and more particularly provides methods of gas-assisted etching using an etching gas including bromine.

Abstract: Synthetic fiber that are capable of spontaneously transporting water on their surface satisfy the equation(1-X cos .theta..sub.a)<0,wherein.theta..sub.a is the advancing contact angle of water measured on a flat film made from the same material as the fiber and having the same surface treatment, if any,X is a shape factor of the fiber cross-section that satisfies the following equation ##EQU1## wherein P.sub.w is the wetted perimeter of the fiber and r is the radius of the circumscribed circle circumscribing the fiber cross-section and D is the minor axis dimensionacross the fiber cross-section, and wherein the uphill flux value of said fiber is from 2 to 60 cc/g/hr when measured from a reservoir of synthetic urine test fluid along a 20 cm long ramp to an absorbant on an attached platform at 10 cm height.

Abstract: Synthetic fiber that are capable of spontaneously transporting water on their surface satisfy the equation(1-X cos .theta..sub.a)<0,wherein.theta..sub.a is the advancing contact angle of water measured on a flat film made from the same material as the fiber and having the same surface treatment, if any,X is a shape factor of the fiber cross-section that satisfies the following equation ##EQU1## wherein P.sub.W is the wetted perimeter of the fiber and r is the radius of the circumscribed circle circumscribing the fiber cross-section and D is the minor axis dimension across the fiber cross-section,and wherein the uphill flux value of said fiber is from 2 to 60 cc/g/hr when measured from a reservoir of synthetic urine test fluid along a 20 cm long ramp to an absorbant on an attached platform at 10 cm height.

Abstract: Spinnerets are used to make synthetic fibers having the unique property of spontaneously transporting water on their surface. The synthetic fibers satisfy the equation(1-X cos .theta..sub.a)<0,wherein.theta..sub.a is the advancing contact angle of water measured on a flat film made from the same material as the fiber and having the same surface treatment, if any,X is a shape factor of the fiber cross-section that satisfies the following equation ##EQU1## wherein P.sub.w is the wetted perimeter of the fiber and r is the radius of the circumscribed circle circumscribing the fiber cross-section and D is the minor axis dimension across the fiber cross-section, and wherein the uphill flux value of said fiber is from 2 to 60 cc/g/hr when measured from a reservoir of synthetic urine test fluid along a 20 cm long ramp to an absorbent on an attached platform at 10 cm height.