Abstract: A temperature corrected voltage bandgap circuit is provided. The circuit includes first and second diode connected transistors. A first switched compare circuit is coupled to the one transistor to inject or remove a first current into or from the transistor. The first current is selected to correct for curvature in the output voltage of the bandgap circuit at one of hotter or colder temperatures.

Abstract: A clinical scoring system and methods that effectively and efficiently utilizes a number of different data sources to determine a diagnosis of patient conditions. The score is compared to a spectrum of scores in order to identify between disorders, such as Inflammatory bowel disease (IBD) and irritable bowel syndrome (IBSd) or gastroesophageal reflux disease (GERD) and functional dyspepsia.

Abstract: A temperature corrected voltage bandgap circuit is provided. The circuit includes first and second diode connected transistors. A first switched compare circuit is coupled to the one transistor to inject or remove a first current into or from the transistor. The first current is selected to correct for curvature in the output voltage of the bandgap circuit at one of hotter or colder temperatures.

Abstract: A temperature corrected voltage bandgap circuit is provided. The circuit includes first and second diode connected transistors. A first switched compare circuit is coupled to the one transistor to inject or remove a first current into or from the transistor. The first current is selected to correct for curvature in the output voltage of the bandgap circuit at one of hotter or colder temperatures.

Abstract: A temperature corrected voltage bandgap circuit is provided. The circuit includes first and second diode connected transistors. A first switched compare circuit is coupled to the one transistor to inject or remove a first current into or from the transistor. The first current is selected to correct for curvature in the output voltage of the bandgap circuit at one of hotter or colder temperatures.

Abstract: A temperature corrected voltage bandgap circuit is provided. The circuit includes first and second diode connected transistors. A first switched current source is coupled to the one transistor to inject or remove a first current into or from the emitter of that transistor. The first current is selected to correct for curvature in the output voltage of the bandgap circuit at one of hotter or colder temperatures.

Abstract: A temperature corrected voltage bandgap circuit is provided. The circuit includes first and second diode connected transistors. A first switched current source is coupled to the one transistor to inject or remove a first current into or from the emitter of that transistor. The first current is selected to correct for curvature in the output voltage of the bandgap circuit at one of hotter or colder temperatures.

Abstract: A temperature corrected voltage bandgap circuit is provided. The circuit includes first and second diode connected transistors. A first switched current source is coupled to the one transistor to inject or remove a first current into or from the emitter of that transistor. The first current is selected to correct for curvature in the output voltage of the bandgap circuit at one of hotter or colder temperatures.

Abstract: A temperature corrected voltage bandgap circuit is provided. The circuit includes first and second diode connected transistors. A first switched current source is coupled to the one transistor to inject or remove a first current into or from the emitter of that transistor. The first current is selected to correct for curvature in the output voltage of the bandgap circuit at one of hotter or colder temperatures.

Abstract: A temperature corrected voltage bandgap circuit is provided. The circuit includes first and second diode connected transistors. A first switched current source is coupled to the one transistor to inject or remove a first current into or from the emitter of that transistor. The first current is selected to correct for curvature in the output voltage of the bandgap circuit at one of hotter or colder temperatures.

Abstract: In accordance with the principles of the invention, a semiconductor substrate is provided that has a first cell formed thereon. The first cell has first and second terminals or nodes and a control terminal or node and has a characteristic breakdown voltage across the first and second terminals. A voltage sensing transistor is coupled across the power transistor first and second terminals. The voltage sensing transistor has a second element characteristic breakdown voltage that is less than the first cell characteristic breakdown voltage. The voltage sensing transistor provides a control signal to the terminal when the voltage across the first and second terminals exceeds the second element characteristic breakdown voltage.

Abstract: A voltage bandgap circuit comprises a first transistor and a second transistor connected in a voltage bandgap circuit arrangement, the area of the first transistor is selected to be a predetermined multiple of the area of the second transistor; a differential input amplifier has a first input coupled to the first transistor and a second input coupled to the second transistor; the amplifier has its output coupled to an output node. A first trimmable resistance network is coupled to say the bandgap circuit and is trimmed to adjust the output voltage of the bandgap circuit based upon a single temperature voltage measurement made across two of the terminals of each transistor.

Abstract: In accordance with the principles of the invention, a semiconductor device is provided that has a power transistor and a voltage sensing transistor formed on a substrate. The power transistor has first and second terminals and a control terminal and having a characteristic first breakdown voltage across the first and second terminals. The voltage sensing transistor is coupled across the power transistor first and second terminals. The voltage sensing transistor has a second element characteristic breakdown voltage that is less than the power transistor breakdown voltage. The second transistor provides a control signal to the power transistor control terminal when the voltage across the power transistor first and second terminals exceeds the second element characteristic breakdown voltage.

Abstract: In accordance with the principles of the invention, a semiconductor device is provided that has a power transistor and a voltage sensing transistor formed on a substrate. The power transistor has first and second terminals and a control terminal and having a characteristic first breakdown voltage across the first and second terminals. The voltage sensing transistor is coupled across the power transistor first and second terminals. The voltage sensing transistor has a second element characteristic breakdown voltage that is less than the power transistor breakdown voltage. The second transistor provides a control signal to the power transistor control terminal when the voltage across the power transistor first and second terminals exceeds the second element characteristic breakdown voltage.

Abstract: In accordance with the principles of the invention, a semiconductor substrate is provided that has a first cell formed thereon. The first cell has first and second terminals or nodes and a control terminal or node and has a characteristic breakdown voltage across the first and second terminals. A voltage sensing transistor is coupled across the power transistor first and second terminals. The voltage sensing transistor has a second element characteristic breakdown voltage that is less than the first cell characteristic breakdown voltage. The voltage sensing transistor provides a control signal to the terminal when the voltage across the first and second terminals exceeds the second element characteristic breakdown voltage.

Abstract: A voltage bandgap circuit comprises a first transistor and a second transistor connected in a voltage bandgap circuit arrangement, the area of the first transistor is selected to be a predetermined multiple of the area of the second transistor; a differential input amplifier has a first input coupled to the first transistor and a second input coupled to the second transistor; the amplifier has its output coupled to an output node. A first trimmable resistance network is coupled to say the bandgap circuit and is trimmed to adjust the output voltage of the bandgap circuit based upon a single temperature voltage measurement made across two of the terminals of each transistor.

Abstract: A temperature corrected voltage bandgap circuit is provided. The circuit includes first and second diode connected transistors. A first switched current source is coupled to the one transistor to inject or remove a first current into or from the emitter of that transistor. The first current is selected to correct for curvature in the output voltage of the bandgap circuit at one of hotter or colder temperatures.

Abstract: A method for providing accurate temperature sensing of a substrate utilizing the PN junction of a transistor formed on the substrate is described.

Abstract: A method for providing accurate temperature sensing of a substrate utilizing the PN junction of a transistor formed on the substrate is described.

Abstract: A start circuit for a bandgap reference cell using CMOS transistors including a transistor connected between the bandgap reference cell and a differential amplifier in the feedback path to create an offset voltage in the bandgap reference cell when power is first applied, which offset insures the correct operation of the bandgap reference cell, and to turn off after correct operation has been achieved.