Abstract: A temperature corrected voltage bandgap circuit is provided. The circuit includes first and second diode connected transistors. A first switched compare circuit is coupled to the one transistor to inject or remove a first current into or from the transistor. The first current is selected to correct for curvature in the output voltage of the bandgap circuit at one of hotter or colder temperatures.

Abstract: A method includes generating an indicator of interference introduced by a transmitter into a spectrum of an output transmit signal outside a target channel of the transmitter. The indicator is generated based on the output transmit signal. The method includes adjusting a power level of the output transmit signal based on the indicator and a predetermined interference indicator level. The indicator may indicate a carrier-to-interference (C/I) ratio of the output transmit signal, and the adjusting comprises setting the power level of the output transmit signal to a maximum power level that maintains the C/I ratio of the output transmit signal above the predetermined interference indicator level. The output transmit signal may be based on a radio-frequency output of a power amplifier of the transmitter prior to transmission over a channel and the generating comprises generating a baseband version of the output transmit signal.

Abstract: A clinical scoring system and methods that effectively and efficiently utilizes a number of different data sources to determine a diagnosis of patient conditions. The score is compared to a spectrum of scores in order to identify between disorders, such as Inflammatory bowel disease (IBD) and irritable bowel syndrome (IBSd) or gastroesophageal reflux disease (GERD) and functional dyspepsia.

Abstract: A temperature corrected voltage bandgap circuit is provided. The circuit includes first and second diode connected transistors. A first switched compare circuit is coupled to the one transistor to inject or remove a first current into or from the transistor. The first current is selected to correct for curvature in the output voltage of the bandgap circuit at one of hotter or colder temperatures.

Abstract: A temperature corrected voltage bandgap circuit is provided. The circuit includes first and second diode connected transistors. A first switched compare circuit is coupled to the one transistor to inject or remove a first current into or from the transistor. The first current is selected to correct for curvature in the output voltage of the bandgap circuit at one of hotter or colder temperatures.

Abstract: A temperature corrected voltage bandgap circuit is provided. The circuit includes first and second diode connected transistors. A first switched compare circuit is coupled to the one transistor to inject or remove a first current into or from the transistor. The first current is selected to correct for curvature in the output voltage of the bandgap circuit at one of hotter or colder temperatures.

Abstract: A temperature corrected voltage bandgap circuit is provided. The circuit includes first and second diode connected transistors. A first switched current source is coupled to the one transistor to inject or remove a first current into or from the emitter of that transistor. The first current is selected to correct for curvature in the output voltage of the bandgap circuit at one of hotter or colder temperatures.

Abstract: A method includes generating an indicator of interference introduced by a transmitter into a spectrum of an output transmit signal outside a target channel of the transmitter. The indicator is generated based on the output transmit signal. The method includes adjusting a power level of the output transmit signal based on the indicator and a predetermined interference indicator level. The indicator may indicate a carrier-to-interference (C/I) ratio of the output transmit signal, and the adjusting comprises setting the power level of the output transmit signal to a maximum power level that maintains the C/I ratio of the output transmit signal above the predetermined interference indicator level. The output transmit signal may be based on a radio-frequency output of a power amplifier of the transmitter prior to transmission over a channel and the generating comprises generating a baseband version of the output transmit signal.

Abstract: A temperature corrected voltage bandgap circuit is provided. The circuit includes first and second diode connected transistors. A first switched current source is coupled to the one transistor to inject or remove a first current into or from the emitter of that transistor. The first current is selected to correct for curvature in the output voltage of the bandgap circuit at one of hotter or colder temperatures.

Abstract: A temperature corrected voltage bandgap circuit is provided. The circuit includes first and second diode connected transistors. A first switched current source is coupled to the one transistor to inject or remove a first current into or from the emitter of that transistor. The first current is selected to correct for curvature in the output voltage of the bandgap circuit at one of hotter or colder temperatures.

Abstract: A low power radio transmitter includes an intermediate frequency stage, signal-to-pulse conversion module, and a power amplifier. The intermediate frequency stage up-converts the frequency of a base-band digital signal into an N-bit signal at the intermediate frequency. The signal-to-pulse conversion module converts the N-bit signal at the intermediate frequency into a pulse signal of M-bits at the radio frequency. As such, the signal-to-pulse conversion module is taking an N-bit signal (e.g., an 8-bit digital signal) and converting it into an M-bit pulse signal (e.g., a 1-bit pulse stream). Accordingly, the M-bit signal at the radio frequency is essentially a square-wave, which has a peak to average ratio of zero, is subsequently amplified by the power amplifier.

Abstract: A temperature corrected voltage bandgap circuit is provided. The circuit includes first and second diode connected transistors. A first switched current source is coupled to the one transistor to inject or remove a first current into or from the emitter of that transistor. The first current is selected to correct for curvature in the output voltage of the bandgap circuit at one of hotter or colder temperatures.

Abstract: A temperature corrected voltage bandgap circuit is provided. The circuit includes first and second diode connected transistors. A first switched current source is coupled to the one transistor to inject or remove a first current into or from the emitter of that transistor. The first current is selected to correct for curvature in the output voltage of the bandgap circuit at one of hotter or colder temperatures.

Abstract: In accordance with the principles of the invention, a semiconductor substrate is provided that has a first cell formed thereon. The first cell has first and second terminals or nodes and a control terminal or node and has a characteristic breakdown voltage across the first and second terminals. A voltage sensing transistor is coupled across the power transistor first and second terminals. The voltage sensing transistor has a second element characteristic breakdown voltage that is less than the first cell characteristic breakdown voltage. The voltage sensing transistor provides a control signal to the terminal when the voltage across the first and second terminals exceeds the second element characteristic breakdown voltage.

Abstract: A radio receiver includes a low-noise amplifier, pulse-to-signal conversion module, and intermediate frequency stage. The low-noise amplifier is operably coupled to receive and amplify an M-bit signal at a radio frequency. The M-bit signal at a radio frequency is representative of a pulse signal that is carried on a radio frequency. The pulse-to-signal conversion module demodulates the M-bit signal to produce an N-bit signal at an intermediate frequency. For example, the pulse-to-signal conversion module performs pulse-width demodulation, pulse-density demodulation, or pulse-position demodulation to recapture the N-bit signal. The intermediate frequency stage steps down the frequency of the N-bit signal to produce a base-band digital signal.

Abstract: A voltage bandgap circuit comprises a first transistor and a second transistor connected in a voltage bandgap circuit arrangement, the area of the first transistor is selected to be a predetermined multiple of the area of the second transistor; a differential input amplifier has a first input coupled to the first transistor and a second input coupled to the second transistor; the amplifier has its output coupled to an output node. A first trimmable resistance network is coupled to say the bandgap circuit and is trimmed to adjust the output voltage of the bandgap circuit based upon a single temperature voltage measurement made across two of the terminals of each transistor.

Abstract: A low power distributed transmitter includes a signal generator, signal partitioning module, signal processing module, a plurality of amplifiers, and a transmitting module. The signal generator is operably coupled to generate a signal to represent base-band data in accordance with a particular transmission protocol. The signal partitioning module is operably coupled to partition the signal into a plurality of signal partitions based on a peak-to-average ratio of the signal. The signal processing module processes the plurality of signal partitions to in accordance with the particular transmission protocol to produce processed signals. Each of the amplifiers amplifies a corresponding one of the processed signal partitions to produce amplified signal partitioned. The transmitting module transmits, via an antenna or a plurality of antennas, the amplified signal partitions as a composite amplified signal.

Abstract: In accordance with the principles of the invention, a semiconductor device is provided that has a power transistor and a voltage sensing transistor formed on a substrate. The power transistor has first and second terminals and a control terminal and having a characteristic first breakdown voltage across the first and second terminals. The voltage sensing transistor is coupled across the power transistor first and second terminals. The voltage sensing transistor has a second element characteristic breakdown voltage that is less than the power transistor breakdown voltage. The second transistor provides a control signal to the power transistor control terminal when the voltage across the power transistor first and second terminals exceeds the second element characteristic breakdown voltage.

Abstract: The present invention relates to a query generator for generating a query for obtaining selected data from a database. The query generator includes a processor which is adapted to receive an input indicating the selected data to be obtained. The processor then analyses the input to determine whether the input requires a joining of data in different tables, and an aggregation step. If so, the processor generates a query which causes the database to aggregate the data within each of the tables as required; and, join the aggregated data, the joined aggregated data representing the selected data.

Abstract: In accordance with the principles of the invention, a semiconductor device is provided that has a power transistor and a voltage sensing transistor formed on a substrate. The power transistor has first and second terminals and a control terminal and having a characteristic first breakdown voltage across the first and second terminals. The voltage sensing transistor is coupled across the power transistor first and second terminals. The voltage sensing transistor has a second element characteristic breakdown voltage that is less than the power transistor breakdown voltage. The second transistor provides a control signal to the power transistor control terminal when the voltage across the power transistor first and second terminals exceeds the second element characteristic breakdown voltage.