Abstract: An abatement system and method for the abatement of contaminants of effluent gases produced during the manufacture of semiconductor devices. A burn/wet scrubber is provided at the device fabrication site where toxic effluent gases are produced. The burn/wet scrubber oxidizes and condenses toxic compounds. Wastewater used to condense oxidized toxic gases is treated locally in an ion exchange filter. The treated wastewater is then directed to a centralized wastewater treatment facility.

Abstract: A method for making an integrated circuit device includes forming source and drain regions in a semiconductor substrate and defining a channel region therebetween, forming a graded, grown, gate oxide layer adjacent the channel region, forming a nitride layer adjacent the gate oxide layer, and forming a gate electrode layer adjacent the nitride layer. The gate oxide layer may be formed by growing a first oxide portion by upwardly ramping the channel region to a first temperature lower than a glass transition temperature, and exposing the channel region to an oxidizing ambient at the first temperature and for a first time period. A second oxide portion may be grown between the first oxide portion and the channel region by exposing the channel region to an oxidizing ambient at a second temperature higher than the glass transition temperature for a second time period so that the second oxide portion has a thickness in a range of about 2% to about 75% of a total thickness of the gate oxide layer.

Abstract: An abatement system and method for the abatement of contaminants of effluent gases produced during the manufacture of semiconductor devices. A burn/wet scrubber is provided at the device fabrication site where toxic effluent gases are produced. The burn/wet scrubber oxidizes and condenses toxic compounds. Wastewater used to condense oxidized toxic gases is treated locally in an ion exchange filter. The treated wastewater is then directed to a centralized wastewater treatment facility.