Abstract: A method is provided for producing an ultrasound transducer for an ultrasound system. The method includes: 1) forming a first layer structure, comprising: (a) forming a frontplane flexible layer above a first substrate; (b) forming an array of ultrasound transducer elements; and 2) providing a second layer structure comprising at least a backplane layer; wherein 1) and/or 2) comprises: 1) (c) forming a first cavity defining layer above the array of ultrasound transducer elements and/or 2) (a) forming a second cavity defining layer above the backplane layer; and defining an array of cavities in the first and/or second cavity defining layer; 3) attaching by adhesive bonding the first layer structure to the second layer structure with the array of ultrasound transducer elements between the frontplane flexible layer and the backplane layer; and 4) removing the first substrate.

Abstract: A light sensor for spectrally resolved light detection, said light sensor comprises: an upper reflective element; a lower reflective element; a photo-sensitive element therebetween; a spacer element, configured to form the lower reflective element or arranged between the upper and the lower reflective element; wherein the elements form a stack of layers which define a resonance structure between the upper and the lower reflective element for providing a resonance of light; wherein the spacer element comprises at least two different materials, a distribution of which is different between different pixels in an array of pixels such that a resonance wavelength is different for different pixels; and wherein for a plurality of pixels, geometrical structures smaller than the resonance wavelength are defined by the at least two different materials.

Abstract: An aspect comprising an optical sensor is disclosed. The optical sensor comprises stacked layers comprising: a window layer configured to allow the passage of photons; a sensing layer configured to generate charges upon impinging of the photons through the window layer; and a bottom electrode layer comprising at least one bottom electrode for receiving charges generated in the sensing layer. The sensing layer is sandwiched between the window layer and the bottom electrode layer. The at least one bottom electrode of the bottom electrode layer comprises conductive material with reflectivity higher than 0.7 to reflect back received photons into the sensing layer; and the at least one bottom electrode is obtained by semiconductor device fabrication techniques.

Abstract: The present disclosure relates to a method for transferring a target layer to a substrate. The method includes providing a stack by forming a first transfer layer over a first substrate, forming a second transfer layer on the first transfer layer, the second transfer layer being water-soluble, and forming the target layer on the second transfer layer, such that the stack has a top surface. The method also includes bonding the top surface of the stack to a second substrate, separating the first transfer layer from the second transfer layer, and dissolving the second transfer layer in water.

Abstract: The present invention provides a flexible ultrasound transducer (1) for an ultrasound monitoring system for examining a curved object.

Abstract: A semiconductor device comprises a substrate, a first hole-transporting layer over the substrate, a first electron-transporting layer on the first hole-transporting layer, and a second hole-transporting layer over the first electron-transporting layer. At least one of the first electron-transporting layer and the second hole-transporting layer has an organic component. The device is characterized by one of the following: a metal oxide layer present on the first electron-transporting layer, wherein a second electron-transporting layer is on the metal oxide layer, wherein the second hole-transporting layer is on the second electron-transporting layer, or the second hole transporting layer has a first p-doped hole-transporting surface present on the first electron-transporting, layer and a second p-doped hole-transporting surface facing away from the first p-doped hole-transporting surface, or the first electron-transporting layer is on a top surface and on sidewalls of the first hole-transporting layer.

Abstract: Example embodiments relate to microfluidic devices for controlling pneumatic microvalves. One embodiment includes a microfluidic device for independently controlling a plurality of pneumatic microvalves. The microfluidic device is couplable to a pressure source. The microfluidic device includes a first substrate. The microfluidic device also includes a flexible membrane covering the first substrate. Additionally, the microfluidic device includes a second substrate covering the flexible membrane. Further, the microfluidic device includes one or more fluidic channels at least partially defined in the first substrate. In addition, the microfluidic device includes a pressure couplable to the pressure source and branching into a plurality of pressure channels. Still further, the microfluidic device includes at least one pressure control switch per pressure channel.

Abstract: Example embodiments relate to microfluidic devices for controlling pneumatic microvalves. One embodiment includes a microfluidic device for independently controlling a plurality of pneumatic microvalves. The microfluidic device is couplable to a pressure source. The microfluidic device includes a first substrate. The microfluidic device also includes a flexible membrane covering the first substrate. Additionally, the microfluidic device includes a second substrate covering the flexible membrane. Further, the microfluidic device includes one or more fluidic channels at least partially defined in the first substrate. In addition, the microfluidic device includes a pressure couplable to the pressure source and branching into a plurality of pressure channels. Still further, the microfluidic device includes at least one pressure control switch per pressure channel.

Abstract: An aspect comprising an optical sensor is disclosed. The optical sensor comprises stacked layers comprising: a window layer configured to allow the passage of photons; a sensing layer configured to generate charges upon impinging of the photons through the window layer; and a bottom electrode layer comprising at least one bottom electrode for receiving charges generated in the sensing layer. The sensing layer is sandwiched between the window layer and the bottom electrode layer. The at least one bottom electrode of the bottom electrode layer comprises conductive material with reflectivity higher than 0.7 to reflect back received photons into the sensing layer; and the at least one bottom electrode is obtained by semiconductor device fabrication techniques.

Abstract: A display of an active matrix thin film emitter LED type is provided, including a substrate, a plurality of pixels of a thin film emitter LED type arranged separated from each other on the substrate, a plurality of thin film photodetectors arranged between the pixels, an encapsulation layer covering the pixels and photodetectors, one or more diaphragms of a visible-light-absorbing material, provided on the encapsulation layer and including a plurality of apertures each centered over a respective one of the photodetectors, and at least one cover layer transparent to visible light and provided on the encapsulation layer and the one or more diaphragms. Methods of operating and manufacturing of such a display are also provided.

Abstract: A method of patterning organic semiconductor layers is disclosed. In one aspect, a method for forming a patterned organic semiconductor layer on a substrate includes providing a plurality of first electrodes on a substrate. The method additionally includes providing a patterned self-assembling monolayer at predetermined locations on each of the plurality of first electrodes. The method further includes providing a layer comprising an organic semiconductor material over the patterned self-assembling monolayer. A corresponding device and a photovoltaic module comprising such a device are also disclosed.

Abstract: A method of patterning organic semiconductor layers is disclosed. In one aspect, a method for forming a patterned organic semiconductor layer on a substrate includes providing a plurality of first electrodes on a substrate. The method additionally includes providing a patterned self-assembling monolayer at predetermined locations on each of the plurality of first electrodes. The method further includes providing a layer comprising an organic semiconductor material over the patterned self-assembling monolayer. A corresponding device and a photovoltaic module comprising such a device are also disclosed.

Abstract: An organic optoelectronic device and a method for manufacturing the same are disclosed. In one aspect, the device has a stack of layers. The stack includes a buffer layer and a first organic semiconductor layer adjacent to the buffer layer at a first side of the buffer layer. The buffer layer includes at least one transition metal oxide doped with a metal.

Abstract: An organic optoelectronic device and a method for manufacturing the same are disclosed. In one aspect, the device has a stack of layers. The stack includes a buffer layer and a first organic semiconductor layer adjacent to the buffer layer at a first side of the buffer layer. The buffer layer includes at least one transition metal oxide doped with a metal.