Abstract: Provided are methods and compositions for preparing a library of target nucleic acid sequences that are useful for assessing gene mutations for oncology biomarker profiling of samples. In particular, a target-specific primer panel is provided that allows for selective amplification of oncology biomarker target sequences in a sample. In one aspect, the invention relates to target-specific primers useful for selective amplification of one or more target sequences associated with oncology biomarkers from two or more sample types. In some aspects, amplified target sequences obtained using the disclosed methods, and compositions can be used in various processes including nucleic acid sequencing and used to detect the presence of genetic variants of one or more targeted sequences associated with oncology.

Abstract: Provided are methods and compositions for preparing a library of target nucleic acid sequences that are useful for assessing gene mutations for oncology biomarker profiling of samples. In particular, a target-specific primer panel is provided that allows for selective amplification of oncology biomarker target sequences in a sample. In one aspect, the invention relates to target-specific primers useful for selective amplification of one or more target sequences associated with oncology biomarkers from two or more sample types. In some aspects, amplified target sequences obtained using the disclosed methods, and compositions can be used in various processes including nucleic acid sequencing and used to detect the presence of genetic variants of one or more targeted sequences associated with oncology.

Abstract: Provided are methods and compositions for preparing a library of target nucleic acid sequences that are useful for assessing gene mutations for oncology biomarker profiling of samples. In particular, a target-specific primer panel is provided that allows for selective amplification of oncology biomarker target sequences in a sample. In one aspect, the invention relates to target-specific primers useful for selective amplification of one or more target sequences associated with oncology biomarkers from two or more sample types. In some aspects, amplified target sequences obtained using the disclosed methods, and compositions can be used in various processes including nucleic acid sequencing and used to detect the presence of genetic variants of one or more targeted sequences associated with oncology.

Abstract: In example implementations, an antenna for a mobile device is provided. The antenna includes a printed circuit board and a plurality of metal members coupled to the printed circuit board. The printed circuit board is devoid of metal traces. The plurality of metal members is positioned along a length of the printed circuit board to operate at a desired frequency band when inserted into an opening along an outer edge perimeter of a metallic housing of the mobile device.

Abstract: Examples disclosed herein relate to a dual band antenna in a mobile device having a peripheral conductive member. In one example, the dual band antenna includes a multilayer PCB having a first antenna feed trace, a second antenna feed trace, a ground trace, and a connecting trace disposed on a dielectric substrate. The connecting trace may couple the first antenna feed trace, the second antenna feed trace, and the ground trace. Further, the dual band antenna includes a connecting element to couple to the connecting trace with the peripheral conductive member to form an integrated resonant element.

Abstract: Example implementations relate to radio frequency power controls. In some examples, a computing device may comprise a processing resource and a memory resource storing machine-readable instructions to cause the processing resource to measure an angle between a first sensor and a second sensor, determine a usage mode from a plurality of usage modes based on the measured angle between the first sensor and the second sensor, and alter a radio frequency (RF) power of the radio module based on the usage mode.

Abstract: Example implementations relate to mixed mode slot antennas. Mixed mode slot antennas may be implemented in a display housing of a communication device. A mixed mode slot antenna unit may include a first PCB attached to a first metal layer to form a first mode antenna, where the first metal layer includes a first slot, and the first metal layer is a metal back cover of the display housing of the communication device. The mixed mode slot antenna unit may also include a second PCB coupled to the first PCB to form a second mode antenna, where the second metal layer includes a second slot, and where the second metal layer is a metal front cover of the display housing; and a non-conductive layer disposed between the first PCB and the second PCB to provide insulation between the first PCB and the second PCB.

Abstract: In one example, a dual-band wireless LAN antenna. The antenna includes plural antenna traces disposed in a first plane that is substantially parallel to, and spaced apart from, a plane of electrically conductive material. At least two of the traces are dimensioned to resonate at different frequencies. The antenna also includes a decoupling element disposed in a second plane between the first plane and the conductive plane. The decoupling element is electrically connected to a selected one of the antenna traces. The antenna further includes a conductor which is electrically connected to the decoupling element and to the conductive plane.

Abstract: In example implementations, an antenna for a mobile device is provided. The antenna includes a printed circuit board and a plurality of metal members coupled to the printed circuit board. The printed circuit board is devoid of metal traces. The plurality of metal members is positioned along a length of the printed circuit board to operate at a desired frequency band when inserted into an opening along an outer edge perimeter of a metallic housing of the mobile device.

Abstract: In one example, a dual-band wireless LAN antenna. The antenna includes plural antenna traces disposed in a first plane that is substantially parallel to, and spaced apart from, a plane of electrically conductive material. At least two of the traces are dimensioned to resonate at different frequencies. The antenna also includes a decoupling element disposed in a second plane between the first plane and the conductive plane. The decoupling element is electrically connected to a selected one of the antenna traces. The antenna further includes a conductor which is electrically connected to the decoupling element and to the conductive plane.

Abstract: Example implementations relate to mixed mode slot antennas. Mixed mode slot antennas may be implemented in a display housing of a communication device. A mixed mode slot antenna unit may include a first PCB attached to a first metal layer to form a first mode antenna, where the first metal layer includes a first slot, and the first metal layer is a metal back cover of the display housing of the communication device. The mixed mode slot antenna unit may also include a second PCB coupled to the first PCB to form a second mode antenna, where the second metal layer includes a second slot, and where the second metal layer is a metal front cover of the display housing; and a non-conductive layer disposed between the first PCB and the second PCB to provide insulation between the first PCB and the second PCB.

Abstract: Examples disclosed herein relate to a dual band antenna in a mobile device having a peripheral conductive member. In one example, the dual band antenna includes a multilayer PCB having a first antenna feed trace, a second antenna feed trace, a ground trace, and a connecting trace disposed on a dielectric substrate. The connecting trace may couple the first antenna feed trace, the second antenna feed trace, and the ground trace. Further, the dual band antenna includes a connecting element to couple to the connecting trace with the peripheral conductive member to form an integrated resonant element.

Abstract: A method for forming a capacitor stack includes forming a first bottom electrode layer including a conductive metal nitride material. A second bottom electrode layer is formed above the first bottom electrode layer. The second bottom electrode layer includes a conductive metal oxide material, wherein the crystal structure of the conductive metal oxide material promotes a desired high-k crystal phase of a subsequently deposited dielectric layer. A dielectric layer is formed above the second bottom electrode layer. Optionally, an oxygen-rich metal oxide layer is formed above the dielectric layer. Optionally, a third top electrode layer is formed above the oxygen-rich metal oxide layer. The third top electrode layer includes a conductive metal oxide material. A fourth top electrode layer is formed above the third top electrode layer. The fourth top electrode layer includes a conductive metal nitride material.

Abstract: The present invention provides the transgenic soybean event MON87754, and the cells, seeds, plant parts, and plants comprising DNA diagnostic for this transgenic soybean event. The event itself functions to increase the oil content of soybeans carrying the event in their genome relative to commodity versions of soy. The invention also provides compositions comprising nucleotide sequences that are diagnostic for said soybean event in a sample, methods for detecting the presence of said soybean event nucleotide sequences in a sample, probes and primers for use in detecting nucleotide sequences that are diagnostic for the presence of said soybean event in a sample, growing the seeds of such soybean event into soybean plants, and breeding to produce soybean plants comprising DNA diagnostic for the soybean event.

Abstract: A method for forming a capacitor stack includes forming a first bottom electrode layer including a conductive metal nitride material. A second bottom electrode layer is formed above the first bottom electrode layer. The second bottom electrode layer includes a conductive metal oxide material, wherein the crystal structure of the conductive metal oxide material promotes a desired high-k crystal phase of a subsequently deposited dielectric layer. A dielectric layer is formed above the second bottom electrode layer. Optionally, an oxygen-rich metal oxide layer is formed above the dielectric layer. Optionally, a third top electrode layer is formed above the oxygen-rich metal oxide layer. The third top electrode layer includes a conductive metal oxide material. A fourth top electrode layer is formed above the third top electrode layer. The fourth top electrode layer includes a conductive metal nitride material.

Abstract: Provided are test vehicles for evaluating various semiconductor materials. These materials may be used for various integrated circuit components, such as embedded resistors of resistive random access memory cells. Also provided are methods of fabricating and operating these test vehicles. A test vehicle may include two stacks protruding through an insulating body. Bottom ends of these stacks may include n-doped poly-silicon and may be interconnected by a connector. Each stack may include a titanium nitride layer provided over the poly-silicon end, followed by a titanium layer over the titanium nitride layer and a noble metal layer over the titanium layer. The noble metal layer extends to the top surface of the insulating body and forms a contact surface. The titanium layer may be formed in-situ with the noble metal layer to minimize oxidation of the titanium layer, which is used as an adhesion and oxygen getter.

Abstract: A method for forming a capacitor stack includes forming a first bottom electrode layer including a conductive metal nitride material. A second bottom electrode layer is formed above the first bottom electrode layer. The second bottom electrode layer includes a conductive metal oxide material, wherein the crystal structure of the conductive metal oxide material promotes a desired high-k crystal phase of a subsequently deposited dielectric layer. A dielectric layer is formed above the second bottom electrode layer. Optionally, an oxygen-rich metal oxide layer is formed above the dielectric layer. Optionally, a third top electrode layer is formed above the oxygen-rich metal oxide layer. The third top electrode layer includes a conductive metal oxide material. A fourth top electrode layer is formed above the third top electrode layer. The fourth top electrode layer includes a conductive metal nitride material.

Abstract: Embodiments of the invention include a nonvolatile memory device that contains nonvolatile resistive random access memory device with improved device performance and lifetime. In some embodiments, nonvolatile resistive random access memory device includes a diode, a metal silicon nitride embedded resistor, and a resistive switching layer disposed between a first electrode layer and a second electrode layer. In some embodiments, the method of forming a resistive random access memory device includes forming a diode, forming a metal silicon nitride embedded resistor, forming a first electrode layer, forming a second electrode layer, and forming a resistive switching layer disposed between the first electrode layer and the second electrode layer.

Abstract: Embodiments of the invention include a nonvolatile memory device that contains nonvolatile resistive random access memory device with improved device performance and lifetime. In some embodiments, nonvolatile resistive random access memory device includes a diode, a metal silicon nitride embedded resistor, and a resistive switching layer disposed between a first electrode layer and a second electrode layer. In some embodiments, the method of forming a resistive random access memory device includes forming a diode, forming a metal silicon nitride embedded resistor, forming a first electrode layer, forming a second electrode layer, and forming a resistive switching layer disposed between the first electrode layer and the second electrode layer.

Abstract: A method for forming a capacitor stack includes forming a first bottom electrode layer including a conductive metal nitride material. A second bottom electrode layer is formed above the first bottom electrode layer. The second bottom electrode layer includes a conductive metal oxide material, wherein the crystal structure of the conductive metal oxide material promotes a desired high-k crystal phase of a subsequently deposited dielectric layer. A dielectric layer is formed above the second bottom electrode layer. Optionally, an oxygen-rich metal oxide layer is formed above the dielectric layer. Optionally, a third top electrode layer is formed above the oxygen-rich metal oxide layer. The third top electrode layer includes a conductive metal oxide material. A fourth top electrode layer is formed above the third top electrode layer. The fourth top electrode layer includes a conductive metal nitride material.