Abstract: Embodiments in accordance with the present invention provide for the use of polycycloolefins in electronic devices and more specifically to the use of such polycycloolefins as gate insulator layers used in the fabrication of electronic devices, the electronic devices that encompass such polycycloolefin gate insulator and processes for preparing such polycycloolefin gate insulator layers and electronic devices encompassing such layers.

Abstract: Embodiments in accordance with the present invention provide for the use of polycycloolefins in electronic devices and more specifically to the use of such polycycloolefins as interlayers applied to fluoropolymer layers used in the fabrication of electronic devices, the electronic devices that encompass such polycycloolefin interlayers and processes for preparing such polycycloolefin interlayers and electronic devices.

Abstract: Embodiments in accordance with the present invention provide for the use of polycycloolefins in electronic devices and more specifically to the use of such polycycloolefins as interlayers applied to fluoropolymer layers used in the fabrication of electronic devices, the electronic devices that encompass such polycycloolefin interlayers and processes for preparing such polycycloolefin interlayers and electronic devices.

Abstract: Embodiments in accordance with the present invention provide for the use of polycycloolefins in electronic devices and more specifically to the use of such polycycloolefins as gate insulator layers used in the fabrication of electronic devices, the electronic devices that encompass such polycycloolefin gate insulator and processes for preparing such polycycloolefin gate insulator layers and electronic devices encompassing such layers.

Abstract: Embodiments in accordance with the present invention provide for the use of polycycloolefins in electronic devices and more specifically to the use of such polycycloolefins as interlayers applied to fluoropolymer layers used in the fabrication of electronic devices, the electronic devices that encompass such polycycloolefin interlayers and processes for preparing such polycycloolefin interlayers and electronic devices.

Abstract: Embodiments in accordance with the present invention provide for the use of polycycloolefins in electronic devices and more specifically to the use of such polycycloolefins as gate insulator layers used in the fabrication of electronic devices, the electronic devices that encompass such polycycloolefin gate insulator and processes for preparing such polycycloolefin gate insulator layers and electronic devices encompassing such layers.

Abstract: The present invention relates to a process for preparing improved electronic devices, in particular organic field effect transistors (OFETs), with patterned insulator and organic semiconductor layers.

Abstract: The invention relates to a process for preparing an electronic device using a protection layer, and to improved electronic devices prepared by this process, in particular organic field effect transistors (OFETs).

Abstract: The present invention relates to a process for preparing improved electronic devices, in particular organic field effect transistors (OFETs), with patterned insulator and organic semiconductor layers.

Abstract: The invention relates to an organic electronic (OE) device, in particular a transistor, comprising an interlayer between the gate insulator and the gate electrode, to novel processes for preparing the device, and to dielectric materials for use in the interlayer.

Abstract: The present invention relates to solution processable passivation layers for organic electronic (OE) devices, and to OE devices, in particular organic field effect transistors (OFETs), comprising such passivation layers.

Abstract: Embodiments in accordance with the present invention provide for the use of polycycloolefins in electronic devices and more specifically to the use of such polycycloolefins as interlayers applied to fluoropolymer layers used in the fabrication of electronic devices, the electronic devices that encompass such polycycloolefin interlayers and processes for preparing such polycycloolefin interlayers and electronic devices.

Abstract: Embodiments in accordance with the present invention provide for the use of polycycloolefins in electronic devices and more specifically to the use of such polycycloolefins as gate insulator layers used in the fabrication of electronic devices, the electronic devices that encompass such polycycloolefin gate insulator and processes for preparing such polycycloolefin gate insulator layers and electronic devices encompassing such layers.

Abstract: The invention relates to the use of a closed field unbalanced magnetron sputter ion plating process in the preparation of organic electronic devices or components thereof, and to organic electronic devices, or components thereof, obtainable by such a process.

Abstract: The present invention relates to an electronic component having at least one anode, at least one cathode, at least one charge injection layer, at least one layer of an organic semiconductor and at least one layer situated between the charge injection layer and the organic semiconductor layer, which component is characterized in that the layer situated between the charge injection layer and the organic semiconductor layer and the organic semiconductor layer are obtainable by coating the charge injection layer with a mixture composition at least one material which can be made insoluble by means of chemical reaction, and at least one organic semiconductor, method for producing said component and use of said component.

Abstract: The invention relates to electronic devices whose electronic properties can surprisingly be improved to a significant degree by inserting at least one crosslinkable polymeric buffer layer, preferably a cationically crosslinkable polymeric buffer layer, between the conductive doped polymer and the organic semiconductor layer. Particularly good properties are obtained with a buffer layer in which crosslinking is thermally induced, i.e. by raising the temperature to 50 to 250° C. Alternatively, crosslinking can be radiation-induced by adding a photoacid. Moreover, such a buffer layer can be advantageously applied by means of printing techniques, especially inkjet printing, as the ideal temperature for the thermal treatment is independent of the glass transition temperature of the material. This avoids having to rely on material that has a low molecular weight, making it possible to apply the layer by means of printing techniques.

Abstract: The invention relates to an organic electronic (OE) device, in particular a transistor, comprising an interlayer between the gate insulator and the gate electrode, to novel processes for preparing the device, and to dielectric materials for use in the interlayer.

Abstract: The invention relates to a process for preparing an electronic device using a protection layer, and to improved electronic devices prepared by this process, in particular organic field effect transistors (OFETs).

Abstract: The present invention describes organic electronic devices in which at least one organic layer of low refractive index is introduced. The light output of the electronic devices is thereby improved.

Abstract: The present invention relates to an electronic component having at least one anode, at least one cathode, at least one charge injection layer, at least one layer of an organic semiconductor and at least one layer situated between the charge injection layer and the organic semiconductor layer, which component is characterized in that the layer situated between the charge injection layer and the organic semiconductor layer and the organic semiconductor layer are obtainable by coating the charge injection layer with a mixture composing at least one material which can be made insoluble by means of chemical reaction, and at least one organic semiconductor, method for producing said component and use of said component.