Abstract: Silicon carbide (SiC) materials including SiC wafers and SiC boules and related methods are disclosed that provide large dimension SiC wafers with reduced crystallographic stress. Growth conditions for SiC materials include maintaining a generally convex growth surface of SiC crystals, adjusting differences in front-side to back-side thermal profiles of growing SiC crystals, supplying sufficient source flux to allow commercially viable growth rates for SiC crystals, and reducing the inclusion of contaminants or non-SiC particles in SiC source materials and corresponding SiC crystals. By forming larger dimension SiC crystals that exhibit lower crystallographic stress, overall dislocation densities that are associated with missing or additional planes of atoms may be reduced, thereby improving crystal quality and usable SiC crystal growth heights.

Abstract: Silicon carbide (SiC) wafers and related methods are disclosed that include large diameter SiC wafers with wafer shape characteristics suitable for semiconductor manufacturing. Large diameter SiC wafers are disclosed that have reduced deformation related to stress and strain effects associated with forming such SiC wafers. As described herein, wafer shape and flatness characteristics may be improved by reducing crystallographic stress profiles during growth of SiC crystal boules or ingots. Wafer shape and flatness characteristics may also be improved after individual SiC wafers have been separated from corresponding SiC crystal boules. In this regard, SiC wafers and related methods are disclosed that include large diameter SiC wafers with suitable crystal quality and wafer shape characteristics including low values for wafer bow, warp, and thickness variation.

Abstract: Silicon carbide (SiC) materials including SiC wafers and SiC boules and related methods are disclosed that provide large dimension SiC wafers with reduced crystallographic stress. Growth conditions for SiC materials include maintaining a generally convex growth surface of SiC crystals, adjusting differences in front-side to back-side thermal profiles of growing SiC crystals, supplying sufficient source flux to allow commercially viable growth rates for SiC crystals, and reducing the inclusion of contaminants or non-SiC particles in SiC source materials and corresponding SiC crystals. By forming larger dimension SiC crystals that exhibit lower crystallographic stress, overall dislocation densities that are associated with missing or additional planes of atoms may be reduced, thereby improving crystal quality and usable SiC crystal growth heights.

Abstract: A method of analyzing semiconductor wafers includes capturing a first image of a first crystalline material, etching a first surface of the first crystalline material to delineate etch defects in the first crystalline material, and capturing a second image of first crystalline material after etching the first surface of the first crystalline material. Based on the second image, labels of etch defects delineated in the first surface of the first crystalline material are generated. The first image and the labels of etch defects are spatially coordinated to form a defect map identifying one or more defects in the first image based on the delineated etch defects, and based on the defect map and nondestructive data obtained from a second crystalline material, defects in the second crystalline material are identified.

Abstract: Silicon carbide (SiC) wafers and related methods are disclosed that include large diameter SiC wafers with wafer shape characteristics suitable for semiconductor manufacturing. Large diameter SiC wafers are disclosed that have reduced deformation related to stress and strain effects associated with forming such SiC wafers. As described herein, wafer shape and flatness characteristics may be improved by reducing crystallographic stress profiles during growth of SiC crystal boules or ingots. Wafer shape and flatness characteristics may also be improved after individual SiC wafers have been separated from corresponding SiC crystal boules. In this regard, SiC wafers and related methods are disclosed that include large diameter SiC wafers with suitable crystal quality and wafer shape characteristics including low values for wafer bow, warp, and thickness variation.

Abstract: Nondestructive characterization of crystalline wafers is provided, including defect detection, identification, and counting. Certain aspects relate to development of nondestructive, high fidelity defect characterization and/or dislocation counting methods based on deep neural networks. Certain aspects relate to nondestructive methods for defect characterization of silicon carbide (SiC) wafers. By subjecting SiC wafers to nondestructive defect characterization, SiC wafers in their final state may be characterized and subsequently used for device fabrication, vastly reducing the expense of the characterization process. Nondestructive defect characterization also allows for increased sampling and improved feedback loops between crystalline growth process development and subsequent device production.

Abstract: A method includes receiving an objective sleep score associated with a user. The method also includes presenting a subjective sleep prompt. The method also includes receiving, via a user input device, a subjective sleep score. The method also includes comparing the objective sleep score with subjective sleep score. The method also includes determining, based on the comparison of the objective sleep score and the subjective sleep score, that the subjective sleep score does not correspond to the objective sleep score. The method also includes presenting one or more additional prompts, wherein the one or more additional prompts are associated with sleep quality factors. The method also includes receiving responses to the one or more additional prompts. The method also includes determining, based on the responses to the one or more additional prompts, a sleep recommendation for the user. The method also includes presenting the sleep recommendation to the user.

Abstract: In one embodiment, a monitoring system includes a monitoring device configured to removably attach to a tracheotomy tube, the monitoring device including a skin sensor configured to detect contact with skin of a patient's neck.

Abstract: In one embodiment, an implant includes a body having a distal end and a proximal end, the distal end including a sharp pointed tip that is configured to pierce and cut through tissue, an anchoring element extending outward from the body configured to prevent migration of the implant within tissue in which the implant has been implanted, and a therapeutic substance that is slowly released by the implant into the tissue over time, wherein the implant is made of a biocompatible and bioabsorbable material.

Abstract: Silicon carbide (SiC) materials including SiC wafers and SiC boules and related methods are disclosed that provide large dimension SiC wafers with reduced crystallographic stress. Growth conditions for SiC materials include maintaining a generally convex growth surface of SiC crystals, adjusting differences in front-side to back-side thermal profiles of growing SiC crystals, supplying sufficient source flux to allow commercially viable growth rates for SiC crystals, and reducing the inclusion of contaminants or non-SiC particles in SiC source materials and corresponding SiC crystals. By forming larger dimension SiC crystals that exhibit lower crystallographic stress, overall dislocation densities that are associated with missing or additional planes of atoms may be reduced, thereby improving crystal quality and usable SiC crystal growth heights.

Abstract: Wafer images and related alignment methods for crystalline wafers are disclosed. Certain aspects relate to accessing and aligning images of a same or similar crystalline wafer captured from different imaging sources. Alignment may include determining spatial differences between shared crystalline features in various wafer images of the same or similar crystalline wafer and transforming at least one of the images according to the determined spatial differences. With sufficient alignment, information may be associated and/or transferred between the various images, thereby providing the capability of forming a combined wafer image and sub-images thereof with high resolution and spatial coordination between different image sources. Certain aspects relate to development of nondestructive, high fidelity defect characterization and/or dislocation counting methods in crystalline materials based on modern deep convolutional neural networks (DCNN).

Abstract: There is described herein a non-replicating Rhabdovirus-derived particle that lacks the ability to spread between cells while having tropism against immortalized cells. The non-replicating Rhabdovirus-derived particle may have cytolytic tropism against immortalized cells. There is also described a non-replicating Rhabdovirus-derived particle that lacks the ability to spread between cells but has innate and/or adaptive immune-stimulating properties.

Abstract: A system and method are described for providing hints to a processing unit that subsequent operations are likely. Responsively, the processing unit takes steps to prepare for the likely subsequent operations. Where the hints are more likely than not to be correct, the processing unit operates more efficiently. For example, in an embodiment, the processing unit consumes less power. In another embodiment, subsequent operations are performed more quickly because the processing unit is prepared to efficiently handle the subsequent operations.

Abstract: There is described herein a non-replicating Rhabdovirus-derived particle that lacks the ability to spread between cells while having tropism against immortalized cells. The non-replicating Rhabdovirus-derived particle may have cytolytic tropism against immortalized cells. There is also described a non-replicating Rhabdovirus-derived particle that lacks the ability to spread between cells but has innate and/or adaptive immune-stimulating properties.

Abstract: Wafer images and related alignment methods for crystalline wafers are disclosed. Certain aspects relate to accessing and aligning images of a same or similar crystalline wafer captured from different imaging sources. Alignment may include determining spatial differences between shared crystalline features in various wafer images of the same or similar crystalline wafer and transforming at least one of the images according to the determined spatial differences. With sufficient alignment, information may be associated and/or transferred between the various images, thereby providing the capability of forming a combined wafer image and sub-images thereof with high resolution and spatial coordination between different image sources. Certain aspects relate to development of nondestructive, high fidelity defect characterization and/or dislocation counting methods in crystalline materials based on modern deep convolutional neural networks (DCNN).

Abstract: Silicon carbide (SiC) wafers and related methods are disclosed that include large diameter SiC wafers with wafer shape characteristics suitable for semiconductor manufacturing. Large diameter SiC wafers are disclosed that have reduced deformation related to stress and strain effects associated with forming such SiC wafers. As described herein, wafer shape and flatness characteristics may be improved by reducing crystallographic stress profiles during growth of SiC crystal boules or ingots. Wafer shape and flatness characteristics may also be improved after individual SiC wafers have been separated from corresponding SiC crystal boules. In this regard, SiC wafers and related methods are disclosed that include large diameter SiC wafers with suitable crystal quality and wafer shape characteristics including low values for wafer bow, warp, and thickness variation.

Abstract: Nondestructive characterization of crystalline wafers is provided, including defect detection, identification, and counting. Certain aspects relate to development of nondestructive, high fidelity defect characterization and/or dislocation counting methods based on deep neural networks. Certain aspects relate to nondestructive methods for defect characterization of silicon carbide (SiC) wafers. By subjecting SiC wafers to nondestructive defect characterization, SiC wafers in their final state may be characterized and subsequently used for device fabrication, vastly reducing the expense of the characterization process. Nondestructive defect characterization also allows for increased sampling and improved feedback loops between crystalline growth process development and subsequent device production.

Abstract: A subsystem is configured to support a distributed instruction set architecture with primary and secondary execution pipelines. The primary execution pipeline supports the execution of a subset of instructions in the distributed instruction set architecture that are issued frequently. The secondary execution pipeline supports the execution of another subset of instructions in the distributed instruction set architecture that are issued less frequently. Both execution pipelines also support the execution of FFMA instructions as well as a common subset of instructions in the distributed instruction set architecture. When dispatching a requested instruction, an instruction scheduling unit is configured to select between the two execution pipelines based on various criteria. Those criteria may include power efficiency with which the instruction can be executed and availability of execution units to support execution of the instruction.

Abstract: An intelligent legal simulator providing at least one intelligent legal environment including, but not limited to, an intelligent courtroom. The intelligent legal simulator may comprise at least one asset, which may be powered by a machine-learning algorithm utilizing artificial intelligence. An artificially-intelligent asset may be created and/or updated according to input received by the intelligent legal simulator system. The intelligent legal simulator may become more independently intelligent as it receives more information. A user may engage with the intelligent legal simulator via a mobile device, tablet, personal computer, head-mounted display, or other similar computing device. The intelligent legal simulator and its artificially-intelligent assets may simulate real legal scenarios, including jury trials, hearings, depositions, voir dire, mediations, arbitrations, administrative hearings, tribunals, international proceedings, and other legal-related procedures.

Abstract: In one embodiment, a monitoring system includes a monitoring device configured to removably attach to a tracheotomy tube, the monitoring device including a skin sensor configured to detect contact with skin of a patient's neck.