Abstract: A dense semiconductor flip-chip device assembly is provided with a heat sink/spreading/dissipating member which is formed as a paddle of a metallic paddle frame in a strip of paddle frames. Dice are bonded to the paddles by e.g. conventional die attach methods, enabling bump attachment and testing to be conducted before detachment from the paddle frame strip.

Abstract: A method and apparatus for decoupling conductive portions of a microelectronic device package. In one embodiment, the package can include a microelectronic substrate and a conductive member positioned at least proximate to the microelectronic substrate. The conductive member can have first and second neighboring conductive portions with at least a part of the first conductive portions spaced apart from a part of the neighboring second conductive portion to define an intermediate region between the first and second conductive portions. Each conductive portion has a bond region electrically coupled to the microelectronic substrate. A dielectric material is positioned adjacent to the first and second conductive portions in the intermediate region and has a dielectric constant of less than about 3.5.

Abstract: A multi-part lead frame semiconductor device assembly is disclosed including a die bonded to a die paddle. A second lead frame including leads is superimposed and bonded onto the first lead frame. Also disclosed is a method for fabricating the multi-part lead frame semiconductor device assembly which utilizes equipment designed for single lead frame processing. If desired, the materials for the multi-part lead frame may be dissimilar.

Abstract: A routing element for use in a semiconductor device assembly includes a substrate that carries conductive traces that provide either additional electrical paths or shorter electrical paths than those provided by a carrier substrate of the semiconductor device assembly. The conductive traces may be carried upon a single surface of the routing element substrate, be carried internally by the routing element substrate, or include externally and internally carried portions. The routing element may also include a contact pad positioned at each end of each conductive trace thereof to facilitate electrical connection of each conductive trace to a corresponding terminal of the substrate or to a corresponding bond pad of a semiconductor device of the multichip module. Multichip modules are also disclosed, as are methods for designing the routing element and methods in which the routing element is used.

Abstract: A routing element for use in a semiconductor device assembly includes a substrate that carries conductive traces that provide either additional electrical paths or shorter electrical paths than those provided by a carrier substrate of the semiconductor device assembly. The conductive traces may be carried upon a single surface of the routing element substrate, be carried internally by the routing element substrate, or include externally and internally carried portions. The routing element may also include a contact pad positioned at each end of each conductive trace thereof to facilitate electrical connection of each conductive trace to a corresponding terminal of the substrate or to a corresponding bond pad of a semiconductor device of the multichip module. Multichip modules are also disclosed, as are methods for designing the routing element and methods in which the routing element is used.

Abstract: A multi-part lead frame semiconductor device assembly is disclosed including a die bonded to a die paddle. A second lead frame including leads is superimposed and bonded onto the first lead frame. Also disclosed is a method for fabricating the multi-part lead frame semiconductor device assembly which utilizes equipment designed for single lead frame processing. If desired, the materials for the multi-part lead frame may be dissimilar.

Abstract: A substrate includes first and second regions over which first and second semiconductor devices are to be respectively positioned. The first region is located at least partially within the second region. Contact areas are located external to the first region but within the second region. In one embodiment, in which semiconductor devices are to be stacked over and secured to the substrate in a flip-chip type arrangement, the contact areas correspond to bond pads of an upper, second semiconductor device, while other contact areas located within the first region correspond to bond pads of a lower, first semiconductor device. In another embodiment, the contact areas correspond to bond pads of the first semiconductor device, which are electrically connected thereto by way of laterally extending discrete conductive elements, while other contact areas that are located external to the second region correspond to bond pads of the upper, second semiconductor device.

Abstract: An apparatus package for high-temperature thermal applications for ball grid array semiconductor devices and a method of packaging ball grid array semiconductor devices.

Abstract: A modular bare die socket assembly is provided for attaching a plurality of miniature semiconductor dice to a substrate. The socket assembly is comprised of a plurality of two-sided plates joined vertically in a horizontal stack, wherein each plate has a die socket for the removable insertion of a bare semiconductor die. A multi-layer interconnect lead tape has a plurality of lithographically formed leads bent on one end to form nodes for attachment to bond pads on the removably inserted semiconductor die, and having opposing ends connectable to the substrate.

Abstract: Ball grid array packages that can be stacked to form highly dense components and the method for stacking ball grid arrays. The ball grid array packages comprise flexible or rigid substrates. The ball grid array packages additionally comprise an arrangement for the substantial matching of impedance for the circuits connected to the semiconductor devices.

Abstract: Methods and apparatuses for packaging a microelectronic device. One embodiment can include a packaged microelectronic device comprising a microelectronic die, an interposer substrate, and a casing encapsulating at least a portion of the die. The microelectronic die can have a first side attached to the substrate, a plurality of contacts on the first side, and an integrated circuit coupled to the contacts. The die can also include a second side with a plurality of first interconnecting elements on the second side of the die, such as first non-planar features. The casing can include an interior surface and a plurality of second interconnecting elements on the interior surface, such as second non-planar features. The first non-planar features on the second side of the die mate with second non-planar features on the interior surface of the casing. Accordingly, delamination along the interface between the microelectronic die and the casing is inhibited.

Abstract: A stacked multiple offset chip device is formed of two or more dice of similar dimensions and bond pad arrangement, in which bond pads are located in fields along less than three edges of the active surface of each die. A first die is attached to a substrate and subsequent die or dice are attached in a vertical sequence atop the first die, each in an offset configuration from the next lower die to expose the bond pads thereof for conductive bonding to metallization of the substrate. The multiple chip device permits a plurality of dice to be stacked in a maximum density low profile device. A particularly useful application is the formation of stacked mass storage flash memory package.

Abstract: A method of manufacturing a stackable package to create a 3-dimensional memory array using ball grid array technology. Specifically, memory chips are coupled to a preformed packages which have alignment features to allow for the stacking of the ball grid arrays. The alignment features are used to align and orient each package with respect to an adjacent package, substrate or printed circuit board. The alignment features also support the weight of the adjacent package during solder ball reflow to maintain stack height and parallelism between packages. Each memory device is serially connected to the adjacent memory device through the vias and solder balls on each package.

Abstract: Methods and apparatuses for packaging a microelectronic device. One embodiment can include a packaged microelectronic device comprising a microelectronic die, an interposer substrate, and a casing encapsulating at least a portion of the die. The microelectronic die can have a first side attached to the substrate, a plurality of contacts on the first side, and an integrated circuit coupled to the contacts. The die can also include a second side with a plurality of first interconnecting elements on the second side of the die, such as first non-planar features. The casing can include an interior surface and a plurality of second interconnecting elements on the interior surface, such as second non-planar features. The first non-planar features on the second side of the die mate with second non-planar features on the interior surface of the casing. Accordingly, delamination along the interface between the microelectronic die and the casing is inhibited.

Abstract: The present invention relates to method of forming a chip package that includes a heat management structure that allows for heat rejection away from a chip but that avoids the prior art problems of thermal stresses caused by dissimilar thermal conductivities of a heat management structure and of creating a thermally unbalanced package due to disparate distribution of packaging plastic. In an embodiment of the present invention a package includes a chip, leads on the chip, a die attach, a downset, a packaging plastic, and an outer structure among others. The outer structure, downset, and die attach are together a substantially unitary article. Achieving a balanced package that substantially resists warpage and bowing during ordinary manufacture and ordinary use in the life of the package is accomplished by balancing packaging material width and the ability of the downset to resist warpage and bowing stresses.

Abstract: An interconnect for BGA packages, a BGA package fabricated using the interconnect, and a method for fabricating BGA packages using the interconnect, are provided. The interconnect includes multiple polymer substrates on which patterns of conductors are formed. Each substrate can be used to fabricate a BGA package. The conductors on the substrates include end portions having bonding vias formed therethrough in alignment with access openings in the substrates. During fabrication of the BGA packages, the bonding vias allow the conductors to be bonded to bond pads on semiconductor dice by forming metal bumps on the bonding vias and bond pads. The access openings in the substrates provide access to the bonding vias and bond pads for a bonding tool configured to form the metal bumps. In addition to the bonding vias, the conductors include ball bonding pads configured for attaching ball contacts, such as solder balls, to the conductors and substrates.

Abstract: The present invention relates to a heat management structure within a chip package that allows for heat rejection away from a chip while addressing problems of thermal stresses caused by dissimilar thermal conductivities of a heat management structure and of creating a thermally unbalanced package due to disparate distribution of packaging plastic. In an embodiment of the present invention a package includes a chip, leads on the chip, a die attach, a downset, a packaging plastic, and an outer structure among others. The outer structure, downset, and die attach are together a substantially unitary article. Achieving a balanced package that substantially resists warpage and bowing during ordinary manufacture and ordinary use in the life of the package is accomplished by balancing packaging material width and the ability of the downset to resist warpage and bowing stresses.

Abstract: An interconnect for BGA packages, a BGA package fabricated using the interconnect, and a method for fabricating BGA packages using the interconnect, are provided. The interconnect includes multiple polymer substrates on which patterns of conductors are formed. Each substrate can be used to fabricate a BGA package. The conductors on the substrates include end portions having bonding vias formed therethrough in alignment with access openings in the substrates. During fabrication of the BGA packages, the bonding vias allow the conductors to be bonded to bond pads on semiconductor dice by forming metal bumps on the bonding vias and bond pads. The access openings in the substrates provide access to the bonding vias and bond pads for a bonding tool configured to form the metal bumps. In addition to the bonding vias, the conductors include ball bonding pads configured for attaching ball contacts, such as solder balls, to the conductors and substrates.

Abstract: The present invention relates to a heat management structure within a chip package that allows for heat rejection away from a chip but that avoids the prior art problems of thermal stresses caused by dissimilar thermal conductivities of a heat management structure and of creating a thermally unbalanced package due to disparate distribution of packaging plastic. In an embodiment of the present invention a package includes a chip, leads on the chip, a die attach, a downset, a packaging plastic, and an outer structure among others. The outer structure, downset, and die attach are together a substantially unitary article. Achieving a balanced package that substantially resists warpage and bowing during ordinary manufacture and ordinary use in the life of the package is accomplished by balancing packaging material width and the ability of the downset to resist warpage and bowing stresses.