Abstract: Embodiments described herein relate to an apparatus that includes an RF power supply and an RF power splitter with switched outputs. In an embodiment, an apparatus includes a radio frequency (RF) power supply, and an RF power splitter electrically coupled to the RF power supply. In an embodiment, the RF power splitter includes a plurality of outputs. In an embodiment, each one of a plurality of RF impedance matches are electrically coupled to a different one of the plurality of outputs of the RF power splitter. In an embodiment, a plurality of switches are along a different one of a plurality of RF cables that couple each of the plurality of outputs of the RF power splitter to a different one of the plurality of RF impedance matches. In an embodiment, the apparatus further includes a controller communicatively coupled to the plurality of switches and the plurality of RF impedance matches, and the controller is configured to tune the plurality of RF impedance matches to a matched input.

Abstract: Embodiments disclosed herein include a module, comprising: a substrate, wherein the substrate comprises a dielectric material, and a microstrip resonator on the substrate. In an embodiment, a microstrip transmission line is on the substrate adjacent to the microstrip resonator, and the microstrip resonator is spaced from the microstrip transmission line by a gap. In an embodiment, a ground plane on a surface of the substrate is opposite from the microstrip resonator.

Abstract: Embodiments described herein relate to an apparatus that includes a first transistor with a first terminal, a first gate, and a second terminal. In an embodiment, the apparatus further includes a second transistor with a third terminal, a second gate, and a fourth terminal. In an embodiment, the second terminal of the first transistor is electrically coupled to the fourth terminal of the second transistor by an electrically conductive path, and the third terminal is grounded. In an embodiment, a power supply is electrically coupled to the first terminal of the first transistor. In an embodiment, the apparatus further comprises a capacitor that is electrically coupled to the electrically conductive path. In an embodiment, a power source is electrically coupled to the electrically conductive path.

Abstract: Embodiments described herein relate to an apparatus that includes an electrically conductive path and switched shunt capacitor electrically coupled to the electrically conductive path. In an embodiment, the switched shunt capacitor is configured to be switched on and off by a half-bridge circuit that includes a first transistor and a second transistor, and wherein an RF choke is on an electrical path between the first transistor and the second transistor.

Abstract: Embodiments described herein relate to an apparatus that includes a first trace, a capacitor electrically coupled to the first trace, and a balanced transformer electrically coupled to the capacitor. In an embodiment, a first transistor and a first diode are electrically coupled to a first inductor of the balanced transformer, and a second transistor and a second diode are electrically coupled to a second inductor of the balanced transformer.

Abstract: Embodiments of the present disclosure herein include an apparatus for processing a substrate. More specifically, embodiments of this disclosure provide a substrate support assembly that includes an electrostatic chuck (ESC) assembly. The ESC assembly comprises a cooling base having a top surface and an outer diameter sidewall, an ESC having a substrate support surface, a bottom surface and an outer diameter sidewall, the bottom surface of the ESC coupled to the top surface of the cooling base by an adhesive layer. The substrate support assembly includes a blocking ring disposed around the outer diameter sidewalls of the cooling base and ESC, the blocking ring shielding an interface between the bottom surface of the ESC and the top surface of the cooling base.

Abstract: Embodiments described herein relate to an apparatus that includes an RF power supply and an RF power splitter. In an embodiment, the RF power splitter includes a plurality of outputs, and a plurality of RF impedance matches are electrically coupled to different ones of the plurality of outputs of the RF power splitter. In an embodiment, a plurality of RF sensors are configured to measure a voltage and/or a current along a plurality of transmission lines that couple each of the plurality of outputs of the RF power splitter to a different one of the plurality of RF impedance matches. In an embodiment, the apparatus further includes a controller communicatively coupled to the plurality of RF sensors and the plurality of RF impedance matches. The controller is configured to balance power that passes through the plurality of RF impedance matches with a detuning operation.

Abstract: Certain aspects are directed towards an apparatus for semiconductor processing. The apparatus generally includes a plurality of chamber enclosures, each including a respective one of a plurality of matching networks and a respective one of a plurality of chamber loads and a splitting circuit having an input path coupled to a splitting node. Multiple split paths may be coupled between the splitting node and a respective one of the plurality of chamber enclosures through a respective one of multiple transmission lines, and each of the plurality of matching networks may be coupled between the respective one of the multiple transmission lines and the respective one of the plurality of chamber loads.

Abstract: The present disclosure describes a semiconductor wafer processing system that uses a splitter circuit to delivery RF power from a power supply to multiple process chambers. The wafer processing system includes a first process chamber, a second process chamber, a power supply, a match circuit, and a splitter circuit. The power supply produces an electric current. The match circuit receives the electric current from the power supply and presents an impedance to the power supply. The splitting circuit includes a first leg and a second leg. The first leg includes a first capacitor that directs a first portion of the electric current from the match circuit to the first process chamber. The second leg includes a second capacitor that directs a second portion of the electric current from the match circuit to the second process chamber.

Abstract: Embodiments disclosed herein include a module, comprising: a substrate, wherein the substrate comprises a dielectric material, and a microstrip resonator on the substrate. In an embodiment, a microstrip transmission line is on the substrate adjacent to the microstrip resonator, and the microstrip resonator is spaced from the microstrip transmission line by a gap. In an embodiment, a ground plane on a surface of the substrate is opposite from the microstrip resonator.

Abstract: This disclosure describes systems, methods, and apparatus for adjusting at least one actuator using at least one control output value to control a plasma processing system. More specifically, the controlling is based on receiving a reference signal defining target values for a parameter that is controlled at an output within the plasma processing system; obtaining a measure of the parameter, where the parameter is measured at a first sampling frequency; calculating one or more internal control signal values at a second sampling frequency; predicting, using an internal model, one or more internal measurements of the controlled parameter at the second sampling frequency; and adjusting, based upon the one or more control output values, at least one actuator at the first sampling frequency, where the control output values are based on the internal control signal values and the predicted internal measurements.

Abstract: Embodiments disclosed herein include an apparatus that includes a radio frequency (RF) power supply, and a power splitter electrically coupled to the RF power supply. In an embodiment, the apparatus includes a plurality of impedance matches electrically coupled to the power splitter, where the power splitter is configured to split RF power from the RF power supply in order to supply the RF power to each of the plurality of impedance matches. In an embodiment, the apparatus further includes a plurality of chambers, wherein each chamber is electrically coupled to a different one of the plurality of impedance matches.

Abstract: Embodiments disclosed herein include a method of impedance tuning in a semiconductor processing tool. In an embodiment, the method comprises measuring a voltage and a current of a transmission line, converting an analog voltage signal and an analog current signal into a digital voltage signal and a digital current signal, calculating a u-vector from the digital voltage signal and the digital current signal, calculating a C1 position of a first capacitor with real components of the u-vector, and calculating a C2 position of a second capacitor with imaginary components of the u-vector.

Abstract: This disclosure describes systems, methods, and apparatus for adjusting at least one actuator using at least one control output value to control a plasma processing system. More specifically, the controlling is based on receiving a reference signal defining target values for a parameter that is controlled at an output within the plasma processing system; obtaining a measure of the parameter, where the parameter is measured at a first sampling frequency; calculating one or more internal control signal values at a second sampling frequency; predicting, using an internal model, one or more internal measurements of the controlled parameter at the second sampling frequency; and adjusting, based upon the one or more control output values, at least one actuator at the first sampling frequency, where the control output values are based on the internal control signal values and the predicted internal measurements.

Abstract: Embodiments disclosed herein include an apparatus that comprises a board with a signal generator for generating chirped signals on the board. In an embodiment, a first mixer is on the board and electrically coupled to the signal generator, and a circulator is on the board. In an embodiment, the circulator comprises a first port that is electrically coupled to the mixer, a second port that is electrically coupled to a connector, and a third port. In an embodiment, a second mixer is on the board and electrically coupled to the third port of the circulator. In an embodiment, an analog to digital converter (ADC) is on the board and electrically coupled to the second mixer.

Abstract: Embodiments disclosed herein include a method of impedance tuning in a semiconductor processing tool. In an embodiment, the method comprises measuring a voltage and a current of a transmission line, converting an analog voltage signal and an analog current signal into a digital voltage signal and a digital current signal, calculating a u-vector from the digital voltage signal and the digital current signal, calculating a C1 position of a first capacitor with real components of the u-vector, and calculating a C2 position of a second capacitor with imaginary components of the u-vector.

Abstract: Embodiments disclosed herein include a method for field adjusting calibrating factors of a plurality of RF impedance matches for control of a plurality of plasma chambers. In an embodiment, the method comprises collecting and storing in a memory data from operation of the plurality of RF impedance matches, and finding a tune space for each of the plurality of RF impedance matches from the collected data. In an embodiment, the method further comprises finding adjustments to account for variability in each of the plurality of RF impedance matches, finding adjustments to variable tuning elements of the plurality of RF impedance matches to account for time varying and process related load impedances, and the method further comprises obtaining operating windows for the variable tuning elements in the plurality of RF impedance matches.

Abstract: Embodiments disclosed herein include a processing tool. In an embodiment, the processing tool comprises a power supply, an impedance matching network coupled to the power supply, a cathode, wherein the power supply is configured to supply power through the impedance matching network to the cathode, and a processing module, wherein the processing module is communicatively coupled to the power supply and the impedance matching network.

Abstract: Embodiments disclosed herein include a process power controller for a plasma processing tool. In an embodiment, the process power controller includes a process power source optimizer, a source predictor, and a process uniformity controller. In an embodiment, the source predictor is communicatively coupled to the process power source optimizer and the process uniformity controller.

Abstract: Embodiments disclosed herein include a processing tool. In an embodiment, the processing tool comprises a power supply, an impedance matching network coupled to the power supply, a cathode, wherein the power supply is configured to supply power through the impedance matching network to the cathode, and a processing module, wherein the processing module is communicatively coupled to the power supply and the impedance matching network.