Abstract: A surface plasmon resonance (SPR) sensor is provided that has enhanced sensitivity. The sensor's plasmonic chip has intrinsically disordered proteins (IDPs) that undergo enzyme-free folding upon binding to an analyte. This binding results in a detectable change in refractive index and thereby permits detection of the analyte.

Abstract: An apparatus to prohibit user injury from sudden impact or rotational or whiplash movement. The apparatus includes a helmet, a body harness configured to secure to the user, a plurality of tethers and a plurality of spools. Each tether has one end attached to the helmet and an opposing end fixed relative to the body harness. Each spool is positioned with a tether in wound engagement with the spool. Each spool includes a locking mechanism moveable between an unlocked condition and a locked condition. Upon pre-determined movement of at least one of the tethers, the corresponding locking mechanism moves from the unlocked condition to the locked condition to prohibit additional movement of the tether.

Abstract: A grating structure for channeling and concentrating incident radiation includes a regular pattern of elements each with a metallic shell partially surrounding at least one subcavity. The subcavity is filled with a dielectric or semiconductor. Light of one or more predetermined wavelength ranges can be concentrated in the subcavity(s) and then efficiently channeled through the grooves between adjacent elements. An optoelectronic device includes the structure superposed on a substrate, which can be semiconductive, and the elements of the grating used as electrodes and adapted to allow a potential difference between adjacent (electrode) elements. The optoelectronic devices include photodetectors, e.g., metal-semiconductor-metal, pn, pin, avalanche, LEDs, IR emitting devices, and biological or chemical sensors.

Abstract: An optical device for sensing an incident optical wave within a wavelength range includes a first array and a second array of electrodes superposed on a substrate, and a sensor connected to the contacts. The arrays are interdigitated. Each array includes its own parameters: contact width, contact thickness, groove width, and a groove dielectric constant. A structure associated with the arrays resonantly couples the incident wave and a local electromagnetic resonance or hybrid mode including at least a surface plasmon cavity mode (CM). For coupling the CM, an aspect ratio of contact thickness to spacing between electrodes is at least 1. A preferred structure for coupling a hybrid mode for high bandwidth and responsivity includes a higher dielectric constant in alternating grooves. The substrate may include silicon, including silicon-on-insulator (SOI). An SOI device having a alternating grooves with a higher dielectric, e.g., silicon oxide, provides 0.25 A/W and 30 GHz bandwidth.

Abstract: A grating structure for channeling and concentrating incident radiation includes a regular pattern of elements each with a metallic shell partially surrounding at least one subcavity. The subcavity is filled with a dielectric or semiconductor. Light of one or more predetermined wavelength ranges can be concentrated in the subcavity(s) and then efficiently channeled through the grooves between adjacent elements. An optoelectronic device includes the structure superposed on a substrate, which can be semiconductive, and the elements of the grating used as electrodes and adapted to allow a potential difference between adjacent (electrode) elements. The optoelectronic devices include photodetectors, e.g., metal-semiconductor-metal, pn, pin, avalanche, LEDs, IR emitting devices, and biological or chemical sensors.

Abstract: An optical device for sensing an incident optical wave within a wavelength range includes a first array and a second array of electrodes superposed on a substrate, and a sensor connected to the contacts. The arrays are interdigitated. Each array includes its own parameters: contact width, contact thickness, groove width, and a groove dielectric constant. A structure associated with the arrays resonantly couples the incident wave and a local electromagnetic resonance or hybrid mode including at least a surface plasmon cavity mode (CM). For coupling the CM, an aspect ratio of contact thickness to spacing between electrodes is at least 1. A preferred structure for coupling a hybrid mode for high bandwidth and responsivity includes a higher dielectric constant in alternating grooves. The substrate may include silicon, including silicon-on-insulator (SOI). An SOI device having a alternating grooves with a higher dielectric, e.g., silicon oxide, provides 0.25 A/W and 30 GHz bandwidth.

Abstract: A method is disclosed for separating a semiconductor epitaxial structure from an insulating growth substrate. The method utilizes electrochemical anodic reactions to remove a thin etch layer disposed near the growth interface. The thin etch layer can be an intentional layer made of a material different from the epitaxial structure and/or can include a material with a high defect density. The method can be applied in the fabrication of optoelectronic and electronic devices from III-V materials, in particular gallium-nitride based materials.