Abstract: A first verifier and second verifier may share a secret string, a first and second random input; may generate a challenge according to a certified randomness protocol and may encrypt the challenge using a keyed cryptographic hash function. The first verifier may send the encrypted challenge, the first random input, and the random hash key to a prover. The second verifier may send second random input to the prover. The prover may decrypt the encrypted challenge and may execute a random quantum computation based on the certified randomness protocol and the challenge and may send a result of the random quantum computation to both the first verifier and the second verifier. The first and second verifiers may determine the results were received within a time threshold, may compare the results to ensure that they match, and may determine the result passes the certified randomness protocol.

Abstract: Methods are described for etching metal layers that are difficult to volatize, such as cobalt, nickel, and platinum to form an etched metal layer with reduced surface roughness. The methods include pretreating the metal layer with a local plasma formed from a hydrogen-containing precursor. The pretreated metal layer is then reacted with a halogen-containing precursor to form a halogenated metal layer having a halogenated etch product. A carbon-and-nitrogen-containing precursor reacts with the halogenated etch product to form a volatile etch product that can be removed in the gas phase from the etched surface of the metal layer. The surface roughness may be reduced by performing one or more plasma treatments on the etching metal layer after a plurality of etching sequences. Surface roughness is also reduced by controlling the temperature and length of time the metal layer is reacting with the etchant precursors.

Abstract: Methods are described for etching metal layers that are difficult to volatize, such as cobalt, nickel, and platinum to form an etched metal layer with reduced surface roughness. The methods include pretreating the metal layer with a local plasma formed from a hydrogen-containing precursor. The pretreated metal layer is then reacted with a halogen-containing precursor to form a halogenated metal layer having a halogenated etch product. A carbon-and-nitrogen-containing precursor reacts with the halogenated etch product to form a volatile etch product that can be removed in the gas phase from the etched surface of the metal layer. The surface roughness may be reduced by performing one or more plasma treatments on the etching metal layer after a plurality of etching sequences. Surface roughness is also reduced by controlling the temperature and length of time the metal layer is reacting with the etchant precursors.

Abstract: Provided herein are a method, apparatus and computer program product for providing a recommendation for an application in response to determining that an application that was initiated was not an intended application. In particular, methods may include receiving a first input corresponding to the initiation of a first application, initiating the first application in response to receiving the first input, receiving an indication of a closure of the first application, and determining that the closure of the first application occurred meeting one or more predetermined conditions. The method may cause a recommendation to be provided of at least a second application in response to determining that the closure of the first application occurred meeting one or more predetermined conditions.