Abstract: Methods, systems, and apparatus, including computer programs encoded on a computer storage medium, for performing neural architecture search for machine learning models. In one aspect, a method comprises receiving training data for a machine learning, generating a plurality of candidate neural networks for performing the machine learning task, wherein each candidate neural network comprises a plurality of instances of a layer block composed of a plurality of layers, for each candidate neural network, selecting a respective type for each of the plurality of layers from a set of layer types that comprises, training the candidate neural network and evaluating performance scores for the trained candidate neural networks as applied to the machine learning task, and determining a final neural network for performing the machine learning task based at least on the performance scores for the candidate neural networks.

Abstract: Methods, systems, and computer program products for direct assignment of physical devices to confidential virtual machines (VMs). At a first guest privilege context of a guest partition, a direct assignment of a physical device associated with a host computer system to the guest partition is identified. The guest partition includes the first guest privilege context and a second guest privilege context, which is restricted from accessing memory associated with the first guest privilege context. The guest partition corresponds to a confidential VM, such that a memory region associated with the guest partition is inaccessible to a host operating system. It is determined, based on a policy, that the physical device is allowed to be directly assigned to the guest partition. Communication between the physical device and the second guest privilege context is permitted, such as by exposing the physical device on a virtual bus and/or forwarding an interrupt.

Abstract: Methods, apparatus, systems, and articles of manufacture to perform computer-based monitoring of audiences of network-based media using information theory to estimate intermediate level unions are disclosed. An example apparatus to determine a deduplicated, census-based audience metric of media includes panel union calculator circuitry to calculate a threshold statistic corresponding to an intermediate union of a panel hierarchy, and census union calculator circuitry to calculate a deduplicated audience value corresponding to the intermediate union of the census hierarchy based on the threshold statistic.

Abstract: Methods, apparatus, systems, and articles of manufacture are disclosed to estimate population reach from marginals. Example apparatus disclosed herein are to determine an audience relationship value based on first audience exposure values for a recorded audience of a media and a first de-duplicated audience value for the recorded audience of the media, determine bounds of a pseudo universe estimate of a population audience of the media based on the audience relationship value and second audience exposure values for the population audience of the media, and iteratively determine the pseudo universe estimate of the population audience and a second de-duplicated audience value for the population audience of the media based on the audience relationship value and the second audience exposure values, the pseudo universe estimate of the population audience to be within the bounds.

Abstract: Provided herein are free base crystalline forms, crystalline salts, and an amorphous salts of omecamtiv mecarbil.

Abstract: Methods are described for etching metal layers that are difficult to volatize, such as cobalt, nickel, and platinum to form an etched metal layer with reduced surface roughness. The methods include pretreating the metal layer with a local plasma formed from a hydrogen-containing precursor. The pretreated metal layer is then reacted with a halogen-containing precursor to form a halogenated metal layer having a halogenated etch product. A carbon-and-nitrogen-containing precursor reacts with the halogenated etch product to form a volatile etch product that can be removed in the gas phase from the etched surface of the metal layer. The surface roughness may be reduced by performing one or more plasma treatments on the etching metal layer after a plurality of etching sequences. Surface roughness is also reduced by controlling the temperature and length of time the metal layer is reacting with the etchant precursors.

Abstract: Methods are described for etching metal layers that are difficult to volatize, such as cobalt, nickel, and platinum to form an etched metal layer with reduced surface roughness. The methods include pretreating the metal layer with a local plasma formed from a hydrogen-containing precursor. The pretreated metal layer is then reacted with a halogen-containing precursor to form a halogenated metal layer having a halogenated etch product. A carbon-and-nitrogen-containing precursor reacts with the halogenated etch product to form a volatile etch product that can be removed in the gas phase from the etched surface of the metal layer. The surface roughness may be reduced by performing one or more plasma treatments on the etching metal layer after a plurality of etching sequences. Surface roughness is also reduced by controlling the temperature and length of time the metal layer is reacting with the etchant precursors.

Abstract: Provided herein are a method, apparatus and computer program product for providing a recommendation for an application in response to determining that an application that was initiated was not an intended application. In particular, methods may include receiving a first input corresponding to the initiation of a first application, initiating the first application in response to receiving the first input, receiving an indication of a closure of the first application, and determining that the closure of the first application occurred meeting one or more predetermined conditions. The method may cause a recommendation to be provided of at least a second application in response to determining that the closure of the first application occurred meeting one or more predetermined conditions.

Abstract: A method of forming a passivation layer comprising silicon nitride on features of a substrate is described. In a first stage of the deposition method, a dielectric deposition gas, comprising a silicon-containing gas and a nitrogen-containing gas, is introduced into the process zone and energized to deposit a silicon nitride layer. In a second stage, a treatment gas, having a different composition than that of the dielectric deposition gas, is introduced into the process zone and energized to treat the silicon nitride layer. The first and second stages can be performed a plurality of times.

Abstract: A method and apparatus for generating air gaps in a dielectric material of an interconnect structure. One embodiment provides a method for forming a semiconductor structure comprising depositing a first dielectric layer on a substrate, forming trenches in the first dielectric layer, filling the trenches with a conductive material, planarizing the conductive material to expose the first dielectric layer, depositing a dielectric barrier film on the conductive material and exposed first dielectric layer, depositing a hard mask layer over the dielectric barrier film, forming a pattern in the dielectric barrier film and the hard mask layer to expose selected regions of the substrate, oxidizing at least a portion of the first dielectric layer in the selected region of the substrate, removing oxidized portion of the first dielectric layer to form reversed trenches around the conductive material, and forming air gaps in the reversed trenches while depositing a second dielectric material in the reversed trenches.

Abstract: A method and apparatus for generating air gaps in a dielectric material of an interconnect structure. One embodiment provides a method for forming a semiconductor structure comprising depositing a first dielectric layer on a substrate, forming trenches in the first dielectric layer, filling the trenches with a conductive material, planarizing the conductive material to expose the first dielectric layer, depositing a dielectric barrier film on the conductive material and exposed first dielectric layer, depositing a hard mask layer over the dielectric barrier film, forming a pattern in the dielectric barrier film and the hard mask layer to expose selected regions of the substrate, oxidizing at least a portion of the first dielectric layer in the selected region of the substrate, removing oxidized portion of the first dielectric layer to form reversed trenches around the conductive material, and forming air gaps in the reversed trenches while depositing a second dielectric material in the reversed trenches.

Abstract: A method of processing a substrate including depositing a transition layer and a dielectric layer on a substrate in a processing chamber are provided. The transition layer is deposited from a processing gas including an organosilicon compound and an oxidizing gas. The flow rate of the organosilicon compound is ramped up during the deposition of the transition layer such that the transition layer has a carbon concentration gradient and an oxygen concentration gradient. The transition layer improves the adhesion of the dielectric layer to an underlying barrier layer on the substrate.