Patents by Inventor David D. Allred

David D. Allred has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5485499
    Abstract: X-ray dispersive and reflective structures utilizing special materials which exhibit improved performance in the specific ranges of interest. The structures are formed of alternating thin layers of uranium, uranium compound or uranium alloy and another spacer material consisting of elements or compounds with low absorptance chosen to match the wavelength of interest. These low index of refraction elements or compounds are those best suited for water window microscopy and nitrogen analysis, or are similar elements or compounds best suited for carbon analysis, boron analysis, and x-ray lithography. The structures are constructed using standard thin layer deposition techniques such as evaporation, sputtering, and CVD, or by novel methods which allow thinner and smoother layers to be deposited.
    Type: Grant
    Filed: August 5, 1994
    Date of Patent: January 16, 1996
    Assignee: Moxtek, Inc.
    Inventors: Hans K. Pew, David D. Allred
  • Patent number: 5458084
    Abstract: X-ray wave diffraction devices are constructed using atomic layer epetaxy. A crystalline substrate is prepared with one or more surface areas on which multiple pairs of layers of material are to be deposited. These layers are then formed by atomic layer epetaxy on the surface areas of the substrate, one on top of another, with the material of each layer of each pair being selected to have a different index of refraction from that of the material of the other layer of each pair. The layers are formed so that the thickness of each layer of a pair is substantially the same as that of the corresponding layer of every other pair and so that x-ray waves impinging on the layers may be reflected therefrom. Layer pairs having a thickness of about 20 angstroms or less are formed on the substrate.
    Type: Grant
    Filed: December 9, 1993
    Date of Patent: October 17, 1995
    Assignee: Moxtek, Inc.
    Inventors: James M. Thorne, James K. Shurtleff, David D. Allred, Raymond T. Perkins
  • Patent number: 5226067
    Abstract: An optical device for interacting with x-ray radiation, wherein the device includes an optical element configured for use as part of a spectroscopy tube, proportional counter, Geiger counter, optical detector or similar optical instrument. An exposed surface of the optical element is coated with at least one bonded layer of boron hydride composition to protect against abrasion, corrosion and other forms of degradation, as well as to provide enhanced sealing of the Z material against leakage. Methods of bonding the desired coating to the optical element are also disclosed.
    Type: Grant
    Filed: March 6, 1992
    Date of Patent: July 6, 1993
    Assignees: Brigham Young University, Multilayer Optics and X-Ray Technology, Inc.
    Inventors: David D. Allred, Fang Yuan, Irwin Rudich
  • Patent number: 4792501
    Abstract: A multilayered article includes at least one periodically repeating set including a layer of amorphous crystallizable material and a layer of crystallization inhibiting material in generally superposed relationship. The layer of crystallizable material has its crystallization temperature raised by the presence of the inhibiting layer. Also disclosed are methods for the fabrication of the multilayered article.
    Type: Grant
    Filed: December 21, 1987
    Date of Patent: December 20, 1988
    Assignee: Energy Conversion Devices, Inc.
    Inventors: David D. Allred, Jesus Gonzalez-Hernandez, On Van Nguyen
  • Patent number: 4753675
    Abstract: A method of forming a magnetic material. The magnetic material is a solid mass of grains, and has magnetic parameters characterized by: (1) a maximum magnetic energy product, (BH).sub.max, greater than 15 megagaussoersteds; and (2) a remanence greater than 9 kilogauss. The magnetic material is prepared by a two step solidification, heat treatment process. The solidification process is carried out by growing microwave powder or snow. The microwave powder or snow is grown by introducing a reaction gas comprised of precursor compounds of the magnetic material into a substantially enclosed reaction vessel. The reaction gas is energized by providing a source of microwave energy coupled to the substantially enclosed reaction vessel while maintaining the reaction gas pressure high enough to form the powdery microwave polymerizate, condensate, or precipitate, i.e., microwave snow.
    Type: Grant
    Filed: October 17, 1986
    Date of Patent: June 28, 1988
    Assignee: Ovonic Synthetic Materials, Inc.
    Inventors: Stanford R. Ovshinsky, Stephen J. Hudgens, David D. Allred, Gregory DeMaggio, Russell C. Custer
  • Patent number: 4745000
    Abstract: An improved method of fabricating the thin film layers of an electrostatic image producing device utilizing microwave energy by operating at substantially the minimum of the pressure-power curve for the particular geometry of reaction vessel and composition of reaction gases being utilized.
    Type: Grant
    Filed: January 29, 1987
    Date of Patent: May 17, 1988
    Assignee: Energy Conversion Devices, Inc.
    Inventors: Stanford R. Ovshinsky, David D. Allred, Lee Walter, Stephen J. Hudgens
  • Patent number: 4715891
    Abstract: A method of forming a magnetic material. The magnetic material is a solid mass of grains, and has magnetic parameters characterized by : (1) a maximum magnetic energy product, (BH).sub.max, greater than 15 megagaussoersteds; and (2) a remanence greater than 9 kilogauss. The magnetic material is prepared by a two step solidification, heat treatment process. The solidification process is carried out by controlled vaporization of precursor elements of the alloy into an inert atmosphere, with subsequent controlled vapor phase condensation. This may be accomplished by vaporizing a precursor type alloy in a plasma torch, such as an argon torch, a hydrogen torch, or other electro-arc torch to form a particulate fine grain alloy. The resulting product of this alternative method is a particulate fine grain alloy. The solid particles have a morphology characterized as being one or more of (i) amorphous; (ii) microcrystalline; or (iii) polycrystalline.
    Type: Grant
    Filed: October 17, 1986
    Date of Patent: December 29, 1987
    Assignee: Ovonic Synthetic Materials Company, Inc.
    Inventors: Stanford R. Ovshinsky, Stephen J. Hudgens, David D. Allred, Gregory DeMaggio
  • Patent number: 4715890
    Abstract: A method of forming a magnetic material. The magnetic material is a solid mass of grains, and has magnetic parameters characterized by: (1) a maximum magnetic energy product, (BH).sub.max, greater than 15 megagaussoersteds; and (2) a remanence greater than 8 kilogauss. The magnetic material is prepared by a two step solidification, heat treatment process. The solidification process is carried out by: (a) forming a solution of reducible precursor compounds of the magnetic material; and (b) thereafter reducing the reducible, precursor compounds and forming a precipitate thereof. The precipitate has a morphology characterized as being one or more of (i) amorphous, (ii) microcrystalline, or (iii) polycrystalline. The grains within the precipitate have, at this stage of the process, an average grain characteristic dimension less than that of the heat treated magnetic material.
    Type: Grant
    Filed: October 17, 1986
    Date of Patent: December 29, 1987
    Assignee: Ovonic Synthetic Materials Company, Inc.
    Inventors: Stanford R. Ovshinsky, Stephen J. Hudgens, David D. Allred, Gregory Demaggio
  • Patent number: 4701343
    Abstract: An improved method of depositing thin films onto a substrate with microwave energy by operating at substantially the minimum of the pressure-power curve for the particular geometry of reaction vessel and composition of reaction gases being utilized.
    Type: Grant
    Filed: August 13, 1986
    Date of Patent: October 20, 1987
    Assignee: Energy Conversion Devices, Inc.
    Inventors: Stanford R. Ovshinsky, David D. Allred, Lee Walter, Stephen J. Hudgens
  • Patent number: 4664937
    Abstract: A method of depositing a semiconductor alloy film onto a substrate by activating at least one group of free radicals and incorporating desired ones of the activated group into the film.
    Type: Grant
    Filed: April 21, 1986
    Date of Patent: May 12, 1987
    Assignee: Energy Conversion Devices, Inc.
    Inventors: Stanford R. Ovshinsky, David D. Allred, Lee Walter, Stephen J. Hudgens
  • Patent number: 4615905
    Abstract: A method of depositing a semiconductor alloy film onto a substrate by activating groups of free radicals and incorporating desired ones of the activated groups into the film.
    Type: Grant
    Filed: April 22, 1985
    Date of Patent: October 7, 1986
    Assignee: Sovonics Solar Systems, Inc.
    Inventors: Stanford R. Ovshinsky, David D. Allred, Lee Walter, Stephen J. Hudgens
  • Patent number: 4517223
    Abstract: A process for making amorphous semiconductor alloy films and devices at high deposition rates utilizes microwave energy to form a deposition plasma. The alloys exhibit high quality electronic properties suitable for many applications including photovoltaic applications.The process includes the steps of providing a source of microwave energy, coupling the microwave energy into a substantially enclosed reaction vessel containing the substrate onto which the amorphous semiconductor film is to be deposited, and introducing into the vessel reaction gases including at least one semiconductor containing compound. The microwave energy and the reaction gases form a glow discharge plasma within the vessel to deposit an amorphous semiconductor film from the reaction gases onto the substrate. The reactions gases can include silane (SiH.sub.4), silicon tetrafluoride (SiF.sub.4), silane and silicon tetrafluoride, silane and germane (GeH.sub.4), and silicon tetrafluoride and germane.
    Type: Grant
    Filed: September 24, 1982
    Date of Patent: May 14, 1985
    Assignee: Sovonics Solar Systems
    Inventors: Stanford R. Ovshinsky, David D. Allred, Lee Walter, Stephen J. Hudgens
  • Patent number: 4504518
    Abstract: A low pressure process for making amorphous semiconductor alloy films and devices at high deposition rates and high gas conversion efficiencies utilizes microwave energy to form a deposition plasma. The alloys exhibit high-quality electronic properties suitable for many applications including photovoltaic and electrophotographic applications.The process includes the steps of providing a source of microwave energy, coupling the microwave energy into a substantially enclosed reaction vessel containing the substrate onto which the amorphous semiconductor film is to be deposited, introducing into the vessel at least one reaction gas and evacuating the vessel to a low enough deposition pressure to deposit the film at high deposition rates with high reaction gas conversion efficiencies without any significant powder or polymeric inclusions. The microwave energy and the reaction gases form a glow discharge plasma within the vessel to deposit an amorphous semiconductor film from the reaction gases onto the substrate.
    Type: Grant
    Filed: April 30, 1984
    Date of Patent: March 12, 1985
    Assignee: Energy Conversion Devices, Inc.
    Inventors: Stanford R. Ovshinsky, David D. Allred, Lee Walter, Stephen J. Hudgens
  • Patent number: 4435445
    Abstract: A process and apparatus for depositing a film from a gas involves introducing the gas to a deposition environment containing a substrate, heating the substrate, and irradiating the gas with radiation having a preselected energy spectrum, such that a film is deposited onto the substrate. In a preferred embodiment, the energy spectrum of the radiation is below or approximately equal to that required to photochemically decompose the gas. In another embodiment, the gas is irradiated through a transparent member exposed at a first surface thereof to the deposition environment, and a flow of substantially inert gaseous material is passed along the first surface to minimize deposition thereon.
    Type: Grant
    Filed: May 13, 1982
    Date of Patent: March 6, 1984
    Assignee: Energy Conversion Devices, Inc.
    Inventors: David D. Allred, Lee Walter, Jaime M. Reyes, Stanford R. Ovshinsky
  • Patent number: 4419533
    Abstract: There is disclosed new and improved photovoltaic devices which provide increased short circuit currents and efficiencies over that previously obtainable from prior devices. The disclosed devices include incident radiation directing means for directing at least a portion of the incident light through the active region or regions thereof at angles sufficient to substantially confine the directed radiation in the devices. This allows substantially total utilization of photogenerated electron-hole pairs. Further, because the light is directed through the active region or regions at such angles, the active regions can be made thinner to also increase collection efficiencies.The incident radiation directors can be random surface or bulk reflectors to provide random scattering of the light, or periodic surface or bulk reflector to provide selective scattering of the light.
    Type: Grant
    Filed: March 3, 1982
    Date of Patent: December 6, 1983
    Assignee: Energy Conversion Devices, Inc.
    Inventors: Wolodymyr Czubatyj, Rajendra Singh, Joachim Doehler, David D. Allred, Jaime M. Reyes