Patents by Inventor David D. Bernhard
David D. Bernhard has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Metal and dielectric compatible sacrificial anti-reflective coating cleaning and removal composition
Patent number: 9422513Abstract: A liquid removal composition and process for removing sacrificial anti-reflective coating (SARC) material from a substrate having same thereon. The liquid removal composition includes at least one fluoride-containing compound, at least one organic solvent, optionally water, and optionally at least one chelating agent. The composition achieves at least partial removal of SARC material in the manufacture of integrated circuitry with minimal etching of metal species on the substrate, such as aluminum, copper and cobalt alloys, and without damage to low-k dielectric materials employed in the semiconductor architecture.Type: GrantFiled: December 2, 2014Date of Patent: August 23, 2016Assignee: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: Melissa K. Rath, David D. Bernhard, Thomas H. Baum, David W. Minsek -
Publication number: 20160152926Abstract: Disclosed herein is a composition and method for semiconductor processing. In one embodiment, a wet-cleaning composition for removal of photoresist is provided. The composition comprises a strong base; an oxidant; and a polar solvent. In another embodiment, a method for removing photoresist is provided. The method comprises the steps of applying a wet-cleaning composition comprising about 0.1 to about 30 weight percent strong base; about one to about 30 weight percent oxidant; about 20 to about 95 weight percent polar solvent; and removing the photoresist.Type: ApplicationFiled: February 8, 2016Publication date: June 2, 2016Inventors: David W. Minsek, Melissa K. Rath, David D. Bernhard, Thomas H. Baum
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Patent number: 9256134Abstract: Disclosed herein is a composition and method for semiconductor processing. In one embodiment, a wet-cleaning composition for removal of photoresist is provided. The composition comprises a strong base; an oxidant; and a polar solvent. In another embodiment, a method for removing photoresist is provided. The method comprises the steps of applying a wet-cleaning composition comprising about 0.1 to about 30 weight percent strong base; about one to about 30 weight percent oxidant; about 20 to about 95 weight percent polar solvent; and removing the photoresist.Type: GrantFiled: March 25, 2014Date of Patent: February 9, 2016Assignee: Advanced Technology Materials, Inc.Inventors: David W. Minsek, Melissa K. Rath, David D. Bernhard, Thomas H. Baum
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METAL AND DIELECTRIC COMPATIBLE SACRIFICIAL ANTI-REFLECTIVE COATING CLEANING AND REMOVAL COMPOSITION
Publication number: 20150094248Abstract: A liquid removal composition and process for removing sacrificial anti-reflective coating (SARC) material from a substrate having same thereon. The liquid removal composition includes at least one fluoride-containing compound, at least one organic solvent, optionally water, and optionally at least one chelating agent. The composition achieves at least partial removal of SARC material in the manufacture of integrated circuitry with minimal etching of metal species on the substrate, such as aluminum, copper and cobalt alloys, and without damage to low-k dielectric materials employed in the semiconductor architecture.Type: ApplicationFiled: December 2, 2014Publication date: April 2, 2015Inventors: Melissa K. RATH, David D. BERNHARD, Thomas H. BAUM, David W. MINSEK -
Metal and dielectric compatible sacrificial anti-reflective coating cleaning and removal composition
Patent number: 8951948Abstract: A liquid removal composition and process for removing sacrificial anti-reflective coating (SARC) material from a substrate having same thereon. The liquid removal composition includes at least one fluoride-containing compound, at least one organic solvent, optionally water, and optionally at least one chelating agent. The composition achieves at least partial removal of SARC material in the manufacture of integrated circuitry with minimal etching of metal species on the substrate, such as aluminum, copper and cobalt alloys, and without damage to low-k dielectric materials employed in the semiconductor architecture.Type: GrantFiled: June 7, 2006Date of Patent: February 10, 2015Assignee: Advanced Technology Materials, Inc.Inventors: Melissa K. Rath, David D. Bernhard, Thomas H. Baum, David W. Minsek -
Publication number: 20140213498Abstract: Disclosed herein is a composition and method for semiconductor processing. In one embodiment, a wet-cleaning composition for removal of photoresist is provided. The composition comprises a strong base; an oxidant; and a polar solvent. In another embodiment, a method for removing photoresist is provided. The method comprises the steps of applying a wet-cleaning composition comprising about 0.1 to about 30 weight percent strong base; about one to about 30 weight percent oxidant; about 20 to about 95 weight percent polar solvent; and removing the photoresist.Type: ApplicationFiled: March 25, 2014Publication date: July 31, 2014Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: David W. Minsek, Melissa K. Rath, David D. Bernhard, Thomas H. Baum
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Patent number: 8679734Abstract: Disclosed herein is a composition and method for semiconductor processing. In one embodiment, a wet-cleaning composition for removal of photoresist is provided. The composition comprises a strong base; an oxidant; and a polar solvent. In another embodiment, a method for removing photoresist is provided. The method comprises the steps of applying a wet-cleaning composition comprising about 0.1 to about 30 weight percent strong base; about one to about 30 weight percent oxidant; about 20 to about 95 weight percent polar solvent; and removing the photoresist.Type: GrantFiled: August 7, 2012Date of Patent: March 25, 2014Assignee: Advanced Technology Materials, Inc.Inventors: David W. Minsek, Melissa K. Rath, David D. Bernhard, Thomas H. Baum
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Patent number: 8338087Abstract: A composition and process for removing photoresist and/or sacrificial anti-reflective coating (SARC) materials from a substrate having such material(s) thereon. The composition includes a base component, such as a quaternary ammonium base in combination with an alkali or alkaline earth base, or alternatively a strong base in combination with an oxidant. The composition may be utilized in aqueous medium, e.g., with chelator, surfactant, and/or co-solvent species, to achieve high-efficiency removal of photoresist and/or SARC materials in the manufacture of integrated circuitry, without adverse effect on metal species on the substrate, such as copper, aluminum and/or cobalt alloys, and without damage to SiOC-based dielectric materials employed in the semiconductor architecture.Type: GrantFiled: March 3, 2004Date of Patent: December 25, 2012Assignee: Advanced Technology Materials, IncInventors: Melissa K. Rath, David D. Bernhard, David Minsek, Michael B. Korzenski, Thomas H. Baum
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Patent number: 8058219Abstract: A liquid removal composition and process for removing photoresist and/or sacrificial anti-reflective coating (SARC) material from a microelectronic device having same thereon. The liquid removal composition includes at least one organic quaternary base and at least one surface interaction enhancing additive. The composition achieves at least partial removal of photoresist and/or SARC material in the manufacture of integrated circuitry with minimal etching of metal species on the microelectronic device, such as copper and cobalt, and without damage to low-k dielectric materials employed in the microelectronic device architecture.Type: GrantFiled: October 12, 2006Date of Patent: November 15, 2011Assignee: Advanced Technology Materials, Inc.Inventors: Melissa K. Rath, David D. Bernhard, Thomas H. Baum, Ping Jiang, Renjie Zhou, Michael B. Korzenski
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Patent number: 7994108Abstract: An aqueous-based composition and process for removing hardened photoresist and/or bottom anti-reflective coating (BARC) material from a microelectronic device having same thereon. The aqueous-based composition includes at least one chaotropic solute, at least one alkaline base, and deionized water. The composition achieves high-efficiency removal of hardened photoresist and/or BARC material in the manufacture of integrated circuitry without adverse effect to metal species on the substrate, such as copper, and without damage to low-k dielectric materials employed in the microelectronic device architecture.Type: GrantFiled: January 9, 2006Date of Patent: August 9, 2011Assignee: Advanced Technology Materials, Inc.Inventors: David W. Minsek, Weihua Wang, David D. Bernhard, Thomas H. Baum, Melissa K. Rath
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Patent number: 7888301Abstract: An aqueous-based composition and process for removing photoresist, bottom anti-reflective coating (BARC) material, and/or gap fill material from a substrate having such material(s) thereon. The aqueous-based composition includes a fluoride source, at least one organic amine, at least one organic solvent, water, and optionally chelating agent and/or surfactant. The composition achieves high-efficiency removal of such material(s) in the manufacture of integrated circuitry without adverse effect on metal species on the substrate, such as copper, and without damage to SiOC-based dielectric materials employed in the semiconductor architecture.Type: GrantFiled: December 1, 2004Date of Patent: February 15, 2011Assignee: Advanced Technology Materials, Inc.Inventors: David D. Bernhard, Yoichiro Fujita, Tomoe Miyazawa, Makoto Nakajima
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Publication number: 20090212021Abstract: An aqueous metal etching composition useful for removal of metals such as nickel, cobalt, titanium, tungsten, and alloys thereof, after formation of metal silicides via rapid thermal annealing during complementary metal-oxide-semiconductor (CMOS) transistor fabrication. The aqueous metal etching composition is also useful for selective removal of metal silicides and/or metal nitrides for wafer re-work. In one formulation, the aqueous metal etching composition contains oxalic acid, and a chloride-containing compound, and in other formulations, the composition contains an oxidizer, such as hydrogen peroxide, and a fluoride source, e.g., borofluoric acid. The composition in another specific formulation contains borofluoric acid and boric acid for effective etching of nickel, cobalt, titanium, tungsten, metal alloys, metal silicides and metal nitrides, without attacking the dielectric and the substrate.Type: ApplicationFiled: June 13, 2006Publication date: August 27, 2009Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: David D. Bernhard, Weihua Wang, Thomas H. Baum
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Publication number: 20090215659Abstract: An aqueous-based composition and process for removing hardened photoresist and/or bottom anti-reflective coating (BARC) material from a microelectronic device having same thereon. The aqueous-based composition includes at least one chaotropic solute, at least one alkaline base, and deionized water. The composition achieves high-efficiency removal of hardened photoresist and/or BARC material in the manufacture of integrated circuitry without adverse effect to metal species on the substrate, such as copper, and without damage to low-k dielectric materials employed in the microelectronic device architecture.Type: ApplicationFiled: January 9, 2006Publication date: August 27, 2009Applicant: ADVANCED TECHNOLOGY MATERIALS. INC.Inventors: David W. Minsek, Weihua Wang, David D. Bernhard, Thomas H. Baum, Melissa K. Rath
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Publication number: 20090118153Abstract: A liquid removal composition and process for removing photoresist and/or sacrificial anti-reflective coating (SARC) material from a microelectronic device having same thereon. The liquid removal composition includes at least one organic quaternary base and at least one surface interaction enhancing additive. The composition achieves at least partial removal of photoresist and/or SARC material in the manufacture of integrated circuitry with minimal etching of metal species on the microelectronic device, such as copper and cobalt, and without damage to low-k dielectric materials employed in the microelectronic device architecture.Type: ApplicationFiled: October 12, 2006Publication date: May 7, 2009Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: Melissa K. Rath, David D. Bernhard, Thomas H. Baum, Ping Jiang, Renjie Zhou, Michael B. Korzenski
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Publication number: 20090032766Abstract: A gate spacer oxide material removal composition and process for at least partial removal of gate spacer oxide material from a microelectronic device having same thereon. The anhydrous removal composition includes at least one organic solvent, at least one chelating agent, a base fluoride:acid fluoride component, and optionally at least one passivator. The composition achieves the selective removal of gate spacer oxide material relative to polysilicon and silicon nitride from the vicinity of the gate electrode on the surface of the microelectronic device with minimal etching of metal silicide interconnect material species employed in the gate electrode architecture.Type: ApplicationFiled: October 4, 2006Publication date: February 5, 2009Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: Martha M. Rajaratnam, David D. Bernhard, David W. Minsek
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Metal and Dielectric Compatible Sacrificial Anti-Reflective Coating Cleaning and Removal Composition
Publication number: 20080242574Abstract: A liquid removal composition and process for removing sacrificial anti-reflective coating (SARC) material from a substrate having same thereon. The liquid removal composition includes at least one fluoride-containing compound, at least one organic solvent, optionally water, and optionally at least one chelating agent. The composition achieves at least partial removal of SARC material in the manufacture of integrated circuitry with minimal etching of metal species on the substrate, such as aluminum, copper and cobalt alloys, and without damage to low-k dielectric materials employed in the semiconductor architecture.Type: ApplicationFiled: June 7, 2006Publication date: October 2, 2008Applicant: Advanced Technology Materials, IncInventors: Melissa K. Rath, David D. Bernhard, Thomas H. Baum, David W. Minsek -
Publication number: 20080006305Abstract: An aqueous-based composition and process for removing photoresist, bottom anti-reflective coating (BARC) material, and/or gap fill material from a substrate having such material(s) thereon. The aqueous-based composition includes a fluoride source, at least one organic amine, at least one organic solvent, water, and optionally chelating agent and/or surfactant. The composition achieves high-efficiency removal of such material(s) in the manufacture of integrated circuitry without adverse effect on metal species on the substrate, such as copper, and without damage to SiOC-based dielectric materials employed in the semiconductor architecture.Type: ApplicationFiled: December 1, 2004Publication date: January 10, 2008Inventors: David D. Bernhard, Yoichiro Fujita, Tomoe Miyazawa, Makoto Nakajima
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Patent number: 7029373Abstract: A chemical mechanical polishing slurry composition and method for using the slurry composition for polishing copper, barrier material and dielectric material that comprises first and second-step slurries. The first-step slurry has a high removal rate on copper and a low removal rate on barrier material. The second-step slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first slurry comprises at least an organic polymeric abrasive.Type: GrantFiled: August 14, 2001Date of Patent: April 18, 2006Assignee: Advanced Technology Materials, Inc.Inventors: Ying Ma, William Wojtczak, Cary Regulski, Thomas H. Baum, David D. Bernhard, Deepak Verma
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Patent number: 6692546Abstract: A chemical mechanical polishing slurry composition and method for using the slurry composition for polishing copper, barrier material and dielectric material that comprises first and second-step slurries. The first-step slurry has a high removal rate on copper and a low removal rate on barrier material. The second-step slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first slurry comprises at least an organic polymeric abrasive.Type: GrantFiled: August 17, 2001Date of Patent: February 17, 2004Assignee: Advanced Technology Materials, Inc.Inventors: Ying Ma, William Wojtczak, Cary Regulski, Thomas H. Baum, David D. Bernhard, Deepak Verma
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Publication number: 20030079416Abstract: A chemical mechanical polishing slurry composition and method for using the slurry composition for polishing copper, barrier material and dielectric material that comprises first and second-step slurries. The first-step slurry has a high removal rate on copper and a low removal rate on barrier material. The second-step slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first slurry comprises at least an organic polymeric abrasive.Type: ApplicationFiled: August 17, 2001Publication date: May 1, 2003Inventors: Ying Ma, William Wojtczak, Cary Regulski, Thomas H. Baum, David D. Bernhard, Deepak Verma