Abstract: A method and apparatus for delivering engineering data to a portable device for use in performing an operation. Engineering data for each part in a set of parts is stored in a file system on the portable device. A set of entries, each entry including a part identifier and a target locator for a part, is created for the set of parts to form a table. An initial locator constructed by a visualization tool is matched to a target locator in the table for a selected part. The target locator identifies a physical location in the file system of requested engineering data for the selected part. A local server on the portable device retrieves the requested engineering data based on the target locator. The local server serves the requested engineering data to a browser, which displays the requested engineering data for use in performing the operation on the selected part.

Abstract: Methods, devices, and systems are used for three-dimensional models for three-dimensional makers to indicate engineering requirements. In an example, operations may be effectuated that include displaying a graphical user interface including an object in a three-dimensional (3D) space and receiving first data that includes a link between a flag and a component of the object. The flag may be indicative of an engineering requirement associated with the component of the object. The flag in the 3D space approximate to the component of the object may be displayed based on the received data.

Abstract: Methods, devices, and systems are used for three-dimensional models for three-dimensional makers to indicate engineering requirements. In an example, operations may be effectuated that include displaying a graphical user interface including an object in a three-dimensional (3D) space and receiving first data that includes a link between a flag and a component of the object. The flag may be indicative of an engineering requirement associated with the component of the object. The flag in the 3D space approximate to the component of the object may be displayed based on the received data.

Abstract: Circuits, systems, and methods of current mode regulation include a primary side for receiving an input signal and a secondary for outputting an output signal. A regulator spans the primary and secondary sides in a configuration by which the input signal may be rectified and thereafter provided to the output node as an output signal. A current monitor is provided at the output node for comparing the output signal to a reference. A communication link is included for providing feedback to the primary side of the regulator for use in regulating the signal.

Abstract: A method and apparatus for delivering engineering data to a portable device for use in performing an operation. Engineering data for each part in a set of parts is stored in a file system on the portable device. A set of entries, each entry including a part identifier and a target locator for a part, is created for the set of parts to form a table. An initial locator constructed by a visualization tool is matched to a target locator in the table for a selected part. The target locator identifies a physical location in the file system of requested engineering data for the selected part. A local server on the portable device retrieves the requested engineering data based on the target locator. The local server serves the requested engineering data to a browser, which displays the requested engineering data for use in performing the operation on the selected part.

Abstract: A power integrated circuit architecture (10) having a high side transistor (100) interposed between a control circuit (152) and a low side transistor (100) to reduce the effects of the low side transistor on the operation of the control circuit. The low side transistor has a heavily p-doped region (56) designed to reduce minority carrier lifetime and improve minority carrier collection to reduce the minority carriers from disturbing the control circuit. The low side transistor has a guardring (16) tied to an analog ground, whereby the control circuit is tied to a digital ground, such that the collection of the minority carriers into the analog ground does not disturb the operation of the control circuit. The low side transistor is comprised of multiple transistor arrays (90) partitioned by at least one deep n-type region (16), which deep n-type region forms a guardring about the respective transistor array.

Abstract: A structure and method of minimizing package-shift effects in integrated circuits is implemented by using a thick metallic overcoat applied after the deposition and patterning of the conventional insulating protective overcoat. The metallic overcoat most preferably comprises a layer of electrolytically deposited copper approximately 15 &mgr;m thick that is patterned to provide for electrically independent regions; but an unbroken area of the metallic overcoat is left over any sensitive analog circuitry, such as a bandgap reference circuit. The thick metallic coating, in addition to minimizing package-shift effects, is also useful as a low-resistance routing layer. The metallic overcoat is sufficiently thin to allow low-profile packaging. The method employs a conductive overcoat that is significantly thin compared to conventional insulating conformal overcoats.

Abstract: The low voltage to high voltage level shifter has falling-edge 1-shot circuits 34 and 36 coupled to the outputs OUT and OUT_B of cross gate-connected transistors 24 and 26 and pull-down transistors 20 and 22. The falling-edge 1-shot circuits 34 and 36 output a narrow pulse when the outputs OUT and OUT_B transition from a high state to a low state. These pulses are used to set and reset a flip-flop 38. The flip flop 38 provides an output that is only dependent on the very fast fall times of the outputs OUT and OUT_B. This allows the level shifter to be designed for optimal transitional performance without the sacrifice of a potentially long propagation delay on the output nodes.

Abstract: A distributed power device (100) including a plurality of tank regions (90) separated from one another by a deep n-type region (16), and having formed in each tank region a plurality of transistors (50). The plurality of transistors (50) in each tank region are interconnected to transistors in other tank regions to form a large power FET, whereby the deep n-type regions isolate the tank regions from one another. A first parasitic diode (D5) is defined from each tank region to a buried layer, and a second parasitic diode (D4) is defined between the buried layer and a substrate. The deep n-type regions distribute the first and second parasitic diodes with respect to the plurality of tank regions, preferably comprised of a P-epi tank. The deep n-type regions also distribute the resistance of an NBL layer (14) formed under the tank regions.

Abstract: A power integrated circuit architecture (10) having a high side transistor (100) interposed between a control circuit (152) and a low side transistor (100) to reduce the effects of the low side transistor on the operation of the control circuit. The low side transistor has a heavily p-doped region (56) designed to reduce minority carrier lifetime and improve minority carrier collection to reduce the minority carriers from disturbing the control circuit. The low side transistor has a guardring (16) tied to an analog ground, whereby the control circuit is tied to a digital ground, such that the collection of the minority carriers into the analog ground does not disturb the operation of the control circuit. The low side transistor is comprised of multiple transistor arrays (90) partitioned by at least one deep n-type region (16), which deep n-type region forms a guardring about the respective transistor array.

Abstract: A power integrated circuit architecture (10) having a high side transistor (100) interposed between a control circuit (152) and a low side transistor (100) to reduce the effects of the low side transistor on the operation of the control circuit. The low side transistor has a heavily p-doped region (56) designed to reduce minority carrier lifetime and improve minority carrier collection to reduce the minority carriers from disturbing the control circuit. The low side transistor has a guardring (16) tied to an analog ground, whereby the control circuit is tied to a digital ground, such that the collection of the minority carriers into the analog ground does not disturb the operation of the control circuit. The low side transistor is comprised of multiple transistor arrays (90) partitioned by at least one deep n-type region (16), which deep n-type region forms a guardring about the respective transistor array.

Abstract: A power integrated circuit architecture (10) having a high side transistor (100) interposed between a control circuit (152) and a low side transistor (100) to reduce the effects of the low side transistor on the operation of the control circuit. The low side transistor has a heavily p-doped region (56) designed to reduce minority carrier lifetime and improve minority carrier collection to reduce the minority carriers from disturbing the control circuit. The low side transistor has a guardring (16) tied to an analog ground, whereby the control circuit is tied to a digital ground, such that the collection of the minority carriers into the analog ground does not disturb the operation of the control circuit. The low side transistor is comprised of multiple transistor arrays (90) partitioned by at least one deep n-type region (16), which deep n-type region forms a guardring about the respective transistor array.

Abstract: A distributed power device (100) including a plurality of tank regions (90) separated from one another by a deep n-type region (16), and having formed in each tank region a plurality of transistors (50). The plurality of transistors (50) in each tank region are interconnected to transistors in other tank regions to form a large power FET, whereby the deep n-type regions isolate the tank regions from one another. A first parasitic diode (D5) is defined from each tank region to a buried layer, and a second parasitic diode (D4) is defined between the buried layer and a substrate. The deep n-type regions distribute the first and second parasitic diodes with respect to the plurality of tank regions, preferably comprised of a P-epi tank. The deep n-type regions also distribute the resistance of an NBL layer (14) formed under the tank regions.

Abstract: An apparatus for presenting a regulated output at an output locus established at a precharge level includes: (a) an error indicator generating an error signal indicating difference between a reference signal and a sensed signal; (b) a pulse indicator coupled with the error indicator generating a pulse signal indicating difference between the error signal and a periodic signal; (c) a switching device responding to the pulse signal effecting coupling of the output locus with a first terminal or a second terminal depending upon whether the pulse signal is at a first level or a second level; and (d) a driver controller coupled with the pulse indicator and the switching device that provides a control signal to the switching device indicating at least one characteristic of the pulse signal. The switching device is operative or inoperative depending upon whether the control signal is in a first state or a second state.

Abstract: The low voltage to high voltage level shifter has falling-edge 1-shot circuits 34 and 36 coupled to the outputs OUT and OUT_B of cross gate-connected transistors 24 and 26 and pull-down transistors 20 and 22. The falling-edge 1-shot circuits 34 and 36 output a narrow pulse when the outputs OUT and OUT_B transition from a high state to a low state. These pulses are used to set and reset a flip-flop 38. The flip flop 38 provides an output that is only dependent on the very fast fall times of the outputs OUT and OUT_B. This allows the level shifter to be designed for optimal transitional performance without the sacrifice of a potentially long propagation delay on the output nodes.

Abstract: A structure and method of minimizing package-shift effects in integrated circuits is implemented by using a thick metallic overcoat applied after the deposition and patterning of the conventional insulating protective overcoat. The metallic overcoat most preferably comprises a layer of electrolytically deposited copper approximately 15 &mgr;m thick that is patterned to provide for electrically independent regions; but an unbroken area of the metallic overcoat is left over any sensitive analog circuitry, such as a bandgap reference circuit. The thick metallic coating, in addition to minimizing package-shift effects, is also useful as a low-resistance routing layer. The metallic overcoat is sufficiently thin to allow low-profile packaging. The method employs a conductive overcoat that is significantly thin compared to conventional insulating conformal overcoats.

Abstract: A structure and method of minimizing package-shift effects in integrated circuits is implemented by using a thick metallic overcoat applied after the deposition and patterning of the conventional insulating protective overcoat. The metallic overcoat most preferably comprises a layer of electrolytically deposited copper approximately 15 &mgr;m thick that is patterned to provide for electrically independent regions; but an unbroken area of the metallic overcoat is left over any sensitive analog circuitry, such as a bandgap reference circuit. The thick metallic coating, in addition to minimizing package-shift effects, is also useful as a low-resistance routing layer. The metallic overcoat is sufficiently thin to allow low-profile packaging. The method employs a conductive overcoat that is significantly thin compared to conventional insulating conformal overcoats.

Abstract: The invention is a multiplex circuit for outputing two or more signals of different levels to a common output pad where a first output driver (D.sub.h) is powered from a voltage rail having a higher voltage than at least one second output driver (D.sub.1) power by a lower voltage rail. An interface circuit (IFC) and level shift circuit provides two output signals base on a single input signal, one signal being equivalent to the voltage of the higher voltage (V.sub.High) and the other being based on the lower voltage (V.sub.low). PMOS device connected to the output pad has its back gate connected to V.sub.high to prevent leakage current through the PMOS device when the output to the output pad (P.sub.1) is equivalent to V.sub.High.

Abstract: A signal driver circuit (10) is provided that comprises a first inverter comprising a P-FET (14), an N-FET (16) and a resistor (18). A second inverter comprises a P-FET (20) and an N-FET (22). Resistor (18) and capacitors (24) and (26) limit the transition times of the output driving signal to control electromagnetic radiation caused by rapid transition times in the output signal. Circuit (10) is independent of the amount of capacitive load (28) driven by the circuit.