Abstract: An intergrated closed apparatus and system for eliminating contaminants including metallic and/or hydrocarbon-containing contaminants on a surface of a semiconductor substrate. The apparatus and system include a heating chamber for heating the contaminated substrate to an elevated temperature, and an input line for purging the chamber with a chlorine-containing gas. The chlorine dissociates from the chlorine-containing gas, reacts with the contaminates, and forms volatile chloride byproducts which are removed from the heating chamber via an output line. A cooling chamber of the apparatus and system having an input line for providing a gas therein cools the substrate. A workpiece holds the substrate, which in turn, is held in position by a pedestal. The pedestal is in contact with a door that seals the closed apparatus and system, whereby the door transfers the substrate from the heating chamber to the cooling chamber, and vice versa.

Abstract: A method and apparatus are provided for eliminating contaminants including metallic and/or hydrocarbon-containing contaminants on a surface of a semiconductor substrate by heating a semiconductor substrate which may have contaminates on the surface thereof to an elevated temperature within an integrated closed system while simultaneously purging the integrated closed system with a chlorine-containing gas. At the elevated temperatures the chlorine dissociates from the chlorine-containing gas and reacts with the contaminates on the substrate surface to form volatile chloride byproducts with such contaminants which are removed from the integrated closed system while the substrate is continuously heated and purged with the chlorine-containing gas. Subsequently, the substrate is moved to a cooling chamber within the integrated closed system and cooled to provide a semiconductor substrate having a clean surface.

Abstract: A method and apparatus are provided for eliminating contaminants including metallic and/or hydrocarbon-containing contaminants on a surface of a semiconductor substrate by heating a semiconductor substrate which may have contaminants on the surface thereof to an elevated temperature within an integrated closed system while simultaneously purging the integrated closed system with a chlorine-containing gas. At the elevated temperatures the chlorine dissociates from the chlorine-containing gas and reacts with the contaminants on the substrate surface to form volatile chloride byproducts with such contaminants which are removed from the integrated closed system while the substrate is continuously heated and purged with the chlorine-containing gas. Subsequently, the substrate is moved to a cooling chamber within the integrated closed system and cooled to provide a semiconductor substrate having a clean surface.

Abstract: A method and apparatus are provided for eliminating contaminants including metallic and/or hydrocarbon-containing contaminants on a surface of a semiconductor substrate by heating a semiconductor substrate which may have contaminates on the surface thereof to an elevated temperature within an integrated closed system while simultaneously purging the integrated closed system with a chlorine-containing gas. At the elevated temperatures the chlorine dissociates from the chlorine-containing gas and reacts with the contaminates on the substrate surface to form volatile chloride byproducts with such contaminants which are removed from the integrated closed system while the substrate is continuously heated and purged with the chlorine-containing gas. Subsequently, the substrate is moved to a cooling chamber within the integrated closed system and cooled to provide a semiconductor substrate having a clean surface.