Patents by Inventor David D. Litfin

David D. Litfin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Bipolar junction transistor antifuse
    Patent number: 7071533
    Abstract: An antifuse device is constructed from a bipolar junction transistor (BJT). The BJT includes a collector, a base, and an emitter. In one embodiment the BJT is formed inherently within a field effect transistor (FET), including a first doped region, a second doped region, a gate, and a body region. The collector of the BJT is realized by the first doped region of the FET, the emitter of the BJT is realized by the second doped region of the FET, and the base of the BJT is realized by the body region. A high resistance path exists between the collector and the base. A first input voltage is connected to the collector and a second input voltage is connected to the base. A switch connects the emitter to a fixed potential when the switch is closed.
    Type: Grant
    Filed: February 4, 2005
    Date of Patent: July 4, 2006
    Assignee: Polar Semiconductor, Inc.
    Inventors: Kurt N. Kimber, David D. Litfin, Joseph Burkhardt, Steven L. Kosier
  • Electrostatic discharge protection circuit
    Patent number: 6768176
    Abstract: The present invention provides an over-voltage protection circuit using a Zener diode and transistor. By disposing at least one junction region of the Zener diode outside of the base region of the transistor, a tight (i.e., with small variation) and suitably high reverse breakdown voltage is achieved.
    Type: Grant
    Filed: October 9, 2002
    Date of Patent: July 27, 2004
    Assignee: PolarFab LLC
    Inventor: David D. Litfin