Patents by Inventor David D. Meyer

David D. Meyer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250060400
    Abstract: Electric field sensors based on Rydberg atoms and their unique capabilities, relative to traditional sensors, are used for detecting radio frequency (RF) signals. Simultaneous demodulation and detection of multiple RF tones spanning nearly two decades (six octaves) are provided. The continuous recovery of the phase and amplitude of each tone and the sensitivity of the system and its bandwidth capabilities for multiband detection are provided. A digital communication protocol is also provided that simultaneously receives on-off-keyed binary data from four bands spanning nearly one decade of frequency.
    Type: Application
    Filed: August 15, 2023
    Publication date: February 20, 2025
    Inventors: David H. Meyer, Joshua C. Hill, Kevin C. Cox, Paul D. Kunz
  • Patent number: 12220229
    Abstract: One or more radar sensors can be used to monitor patients in a variety of different environments and embodiments. In one embodiment, radar sensors can be used to monitor a patient's breathing, including monitoring of tidal volume, chest expansion distance, breathing rate, etc. In another embodiment, a patient position can be monitored in a patient bed, which can be used as feedback for control of bladders of a patient bed. Additional embodiments are described herein.
    Type: Grant
    Filed: December 14, 2023
    Date of Patent: February 11, 2025
    Assignee: Hill-Rom Services, Inc.
    Inventors: Stacey A. Fitzgibbons, David L. Ribble, Eric R. Meyer, Michael S. Hood, Gregory J. Shannon, Yue Wang, Charles A. Lachenbruch, Steven D. Baker
  • Patent number: 4814290
    Abstract: A method for providing increased dopant concentration in selected regions of semiconductors by providing field implant dopant in the transition region located below the "bird's beak" region and between the field and active regions of a semiconductor. The method comprises the steps of: forming a thin insulating layer on the surface of a semiconductor substrate; depositing a thin anti-oxidant layer on the insulating layer; depositing a layer of photoresist on the anti-oxidant layer; selectively etching the anti-oxidant layer; ion-implanting the field region of the semiconductor substrate; providing spacers on the sides of the anti-oxidant layer; and oxidizing the semiconductor substrate.
    Type: Grant
    Filed: October 30, 1987
    Date of Patent: March 21, 1989
    Assignee: International Business Machines Corporation
    Inventors: Jeffrey R. Barber, Harish N. Kotecha, David D. Meyer, David Stanasolovich