Abstract: A light sensor having a light conversion element between first and second electrodes is disclosed. The light conversion element includes a body of semiconductor material having first and second surfaces. The body of semiconductor material is of a first conductivity type and has doping elements in a concentration gradient that creates a first electrostatic field having a magnitude that varies monotonically from the first surface to the second surface. A bias circuit applies a variable potential between the first and second electrodes to create a second electrostatic field having a direction opposite to that of the first electrostatic field and a magnitude determined by the potential. One of the electrodes is transparent to light in a predetermined band of wavelengths. The body of semiconductor material can include an epitaxial body having a monotonically increasing concentration of a doping element as a function of the distance from one the surfaces.

Abstract: A light sensor having a light conversion element between first and second electrodes is disclosed. The light conversion element includes a body of semiconductor material having first and second surfaces. The body of semiconductor material is of a first conductivity type and has doping elements in a concentration gradient that creates a first electrostatic field having a magnitude that varies monotonically from the first surface to the second surface. A bias circuit applies a variable potential between the first and second electrodes to create a second electrostatic field having a direction opposite to that of the first electrostatic field and a magnitude determined by the potential. One of the electrodes is transparent to light in a predetermined band of wavelengths. The body of semiconductor material can include an epitaxial body having a monotonically increasing concentration of a doping element as a function of the distance from one the surfaces.

Abstract: A light sensor having a light conversion element between first and second electrodes is disclosed. The light conversion element includes a body of semiconductor material having first and second surfaces. The body of semiconductor material is of a first conductivity type and has doping elements in a concentration gradient that creates a first electrostatic field having a magnitude that varies monotonically from the first surface to the second surface. A bias circuit applies a variable potential between the first and second electrodes to create a second electrostatic field having a direction opposite to that of the first electrostatic field and a magnitude determined by the potential. One of the electrodes is transparent to light in a predetermined band of wavelengths. The body of semiconductor material can include an epitaxial body having a monotonically increasing concentration of a doping element as a function of the distance from one the surfaces.

Abstract: An imaging array having a CCD imaging array that includes a plurality of pixels that accumulate charge when exposed to light and a readout amplifier is disclosed. The readout amplifier includes an operational amplifier having an input and an output port and a feedback capacitor connecting the input and output ports and a variable impedance path between the input and output ports, the path having an impedance controlled by a reset signal. A reset signal generator generates the reset signal in three sequential phases in which the path between the input and output ports has three impedance values to provide a starting voltage at the amplifier input prior to the measurement of charge from each pixel that has reduced noise.

Abstract: Embodiments of the present invention are directed to an apparatus and a method for synchronizing the velocity of an image of a moving object or target and the clocking of image sensor elements used to track the moving target. In one embodiment, an imaging apparatus comprises a two-dimensional array of image sensor elements being configured to sense a first set of image elements of a target moving in a first direction with respect to the two-dimensional array of image sensor elements, to integrate light from the set of image elements into corresponding pixel values, and to shift the pixel values along the image sensor elements in the first direction according to a clock rate. A row of image sensor elements extends in the first direction to sense a second set of image elements of the target moving in the first direction.

Abstract: A gain compression method and apparatus which is especially suitable for charge coupled devices is disclosed. A mobile charge packet generation area is provided with an adjacent overflow barrier. The overflow barrier is adjacent an N+ diffusion region which provides parasitic capacitance to the overflow barrier. The diffusion region adjusts the potential of the overflow barrier as greater amounts of charge overflow the barrier.

Abstract: A high dynamic range charge collection circuit is described which includes additional electrodes between the photogate and the transfer gate electrode to create charge transfer wells of different depths. The charge-coupled device has a nonlinear relationship between the charge transferred out of the sensing region and the charge generated in the photosite.

Abstract: Structure is disclosed for a charge-coupled device for generating reference signals indicative of black and white optical conditions and for generating an end-of-scan indicator signal. The black reference signal is generated by electrically and optically isolating one or more photosites of the CCD. A white reference signal is generated by injecting a controlled amount of charge into one or more elements of a shift register of a charge-coupled device. The end-of-scan indicator signal is generated by injecting a signal into at least one element of a shift register which does not have photosites associated with it. The black and white reference signals allow the utilization of the full dynamic range of the device under a wide range of operation conditions, while the end-of-scan indicator eliminates the need for external counting or reset circuits associated with conventional charge-coupled devices.